Hefei Purple Horn E-Commerce Co., Ltd.
| Configuration | - |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 29A |
| RDS(on) | 79mΩ |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Type | - |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| Input Capacitance(Ciss) | 1.02nF |
| Output Capacitance(Coss) | 80pF |
| Pd - Power Dissipation | 150W |
| Gate Charge(Qg) | 46nC |
| Description | 650V 29A 150W Through Hole TO-247-3L |
| Mfr. Part # | HC3M0060065D |
| Package | TO-247-3L |
| Model Number | HC3M0060065D |
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Product Specification
| Configuration | - | Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 29A | RDS(on) | 79mΩ |
| Operating Temperature - | -40℃~+175℃ | Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Type | - | Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| Input Capacitance(Ciss) | 1.02nF | Output Capacitance(Coss) | 80pF |
| Pd - Power Dissipation | 150W | Gate Charge(Qg) | 46nC |
| Description | 650V 29A 150W Through Hole TO-247-3L | Mfr. Part # | HC3M0060065D |
| Package | TO-247-3L | Model Number | HC3M0060065D |
The HC3M0060065D is a 3rd Generation SiC Power MOSFET from HUAXUANYANG ELECTRONICS CO.,LTD. It features high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. This MOSFET offers higher system efficiency, reduced cooling requirements, increased power density, and enables higher system switching frequencies. It is easy to parallel and simple to drive, making it suitable for applications like EV charging, server power supplies, solar PV inverters, UPS, and DC/DC converters.
| Symbol | Parameter | Value | Unit | Note |
| VDSS | Drain - Source Voltage, TC = 25 C | 650 | V | |
| VGS | Gate - Source voltage (Under transient events < 100 ns) | -8/+19 | V | Fig. 29 |
| ID | Continuous Drain Current, VGS = 15 V, TC = 25C | 29 | A | Fig. 19 Note 1 |
| ID | Continuous Drain Current, VGS = 15 V, TC = 100C | 20 | A | |
| ID(pulse) | Pulsed Drain Current, Pulse width tP limited by Tjmax | 99 | A | |
| PD | Power Dissipation, TC=25C, TJ = 175 C | 150 | W | Fig. 20 |
| TJ , Tstg | Operating Junction and Storage Temperature | -40 to +175 | C | |
| TL | Solder Temperature, 1.6mm (0.063) from case for 10s | 260 | C | |
| Md | Mounting Torque, (M3 or 6-32 screw) | 1.8 | Nm lbf-in | |
| V(BR)DSS | Drain-Source Breakdown Voltage | 650 | V | VGS = 0 V, ID = 100 A |
| VGSon | Gate-Source Recommended Turn-On Voltage | 15 | V | Static Fig. 29 |
| VGSoff | Gate-Source Recommended Turn-Off Voltage | -4 | V | |
| VGS(th) | Gate Threshold Voltage | 1.8 / 2.3 / 3.6 | V | VDS = VGS, ID = 5 mA Fig. 11 |
| IDSS | Zero Gate Voltage Drain Current | 1 / 50 | A | VDS = 650 V, VGS = 0 V |
| IGSS | Gate-Source Leakage Current | 10 / 250 | nA | VGS = 15 V, VDS = 0 V |
| RDS(on) | Drain-Source On-State Resistance | 42 / 60 / 79 | m | VGS = 15 V, ID = 13.2 A Fig. 4, 5,6 |
| gfs | Transconductance | 10 / 9 | S | VDS= 20 V, IDS= 13.2 A Fig. 7 |
| Ciss | Input Capacitance | 1020 | pF | VGS = 0 V, VDS = 600 V f = 1 MHz VAC = 25 mV Fig. 17, 18 |
| Coss | Output Capacitance | 80 | pF | |
| Crss | Reverse Transfer Capacitance | 9 | pF | |
| Co(er) | Effective Output Capacitance (Energy Related) | 95 | pF | Note 1 |
| Co(tr) | Effective Output Capacitance (Time Related) | 132 | pF | |
| Eoss | Stored Energy | 15 | J | VDS = 600 V, 1 MHz Fig. 16 |
| EON | Turn-On Switching Energy (Body Diode) | 110 | J | VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5, L= 135 H, TJ = 175C FWD = Internal Body Diode of MOSFET Fig. 25 |
| EOFF | Turn Off Switching Energy (Body Diode) | 22 | J | |
| EON | Turn-On Switching Energy (External SiC Diode) | 63 | J | VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5, L= 135 H, TJ = 175C FWD = External SiC Diode Fig. 25 |
| EOFF | Turn Off Switching Energy (External SiC Diode) | 28 | J | |
| td(on) | Turn-On Delay Time | 9 | ns | VDD = 400 V, VGS = -4 V/15 V ID = 13.2 A, RG(ext) = 2.5 , L= 135 H Timing relative to VDS Inductive load Fig. 26 |
| tr | Rise Time | 20 | ns | |
| td(off) | Turn-Off Delay Time | 17 | ns | |
| tf | Fall Time | 8 | ns | |
| RG(int) | Internal Gate Resistance | 3 | f = 1 MHz, VAC = 25 mV | |
| Qgs | Gate to Source Charge | 14 | nC | VDS = 400 V, VGS = -4 V/15 V ID = 13.2 A Per IEC60747-8-4 pg 21 Fig. 12 |
| Qgd | Gate to Drain Charge | 14 | nC | |
| Qg | Total Gate Charge | 46 | nC | |
| VSD | Diode Forward Voltage | 5.1 / 4.8 | V | VGS = -4 V, ISD = 6.6 A, TJ = 25 C / 175 C Fig. 8, 9, 10 |
| IS | Continuous Diode Forward Current | 23 | A | VGS = -4 V, TC = 25C |
| IS, pulse | Diode pulse Current | 99 | A | VGS = -4 V, pulse width tP limited by Tjmax |
| trr | Reverse Recover time | 20 / 29 | ns | VGS = -4 V, ISD = 13.2 A, VR = 400 V dif/dt = 1200 A/s / 750 A/s, TJ = 175 C |
| Qrr | Reverse Recovery Charge | 190 / 181 | nC | |
| Irrm | Peak Reverse Recovery Current | 16 / 9 | A | |
| RJC | Thermal Resistance from Junction to Case | 0.99 | C/W | Fig. 21 |
| RJA | Thermal Resistance From Junction to Ambient | 40 | C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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