| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 205A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 2.4mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 525pF@15V |
| Number | 1 N-channel |
| Pd - Power Dissipation | 187W |
| Input Capacitance(Ciss) | 5.85nF@15V |
| Gate Charge(Qg) | 56.9nC@10V |
| Description | N-Channel 30V 205A 187W Surface Mount TO-263 |
| Mfr. Part # | HSH3018B |
| Package | TO-263 |
| Model Number | HSH3018B |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 205A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 2.4mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 525pF@15V | Number | 1 N-channel |
| Pd - Power Dissipation | 187W | Input Capacitance(Ciss) | 5.85nF@15V |
| Gate Charge(Qg) | 56.9nC@10V | Description | N-Channel 30V 205A 187W Surface Mount TO-263 |
| Mfr. Part # | HSH3018B | Package | TO-263 |
| Model Number | HSH3018B |
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSH3018B | Drain-Source Voltage (VDS) | 30 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID) | VGS @ 10V, TC=25 | 205 | A | |||
| Continuous Drain Current (ID) | VGS @ 10V, TC=100 | 145 | A | |||
| Pulsed Drain Current (IDM) | 500 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 246 | mJ | ||||
| Avalanche Current (IAS) | 70.2 | A | ||||
| Total Power Dissipation (PD) | TC=25 | 187 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | --- | 62 | /W | ||
| Thermal Resistance Junction-Case (RJC) | --- | --- | 0.8 | /W | ||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 30 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V, ID=30A | --- | 2 | 2.4 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V, ID=15A | --- | 2.6 | 3.2 | m | |
| Diode Characteristics | Continuous Source Current (IS) | VG=VD=0V, Force Current | --- | --- | 205 | A |
| Diode Forward Voltage (VSD) | VGS=0V, IS=1A, TJ=25 | --- | 1.2 | V |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!