Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 4A |
| RDS(on) | 50mΩ@4.5V,4A |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF |
| Number | 1 P-Channel |
| Output Capacitance(Coss) | 205pF |
| Input Capacitance(Ciss) | 1.45nF |
| Pd - Power Dissipation | 350mW |
| Gate Charge(Qg) | 17.2nC@4.5V |
| Description | P-Channel 20V 4A 350mW Surface Mount SOT-23 |
| Mfr. Part # | CJ3415 R15 |
| Package | SOT-23 |
| Model Number | CJ3415 R15 |
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Product Specification
| Drain to Source Voltage | 20V | Current - Continuous Drain(Id) | 4A |
| RDS(on) | 50mΩ@4.5V,4A | Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | P-Channel | Reverse Transfer Capacitance (Crss@Vds) | 160pF |
| Number | 1 P-Channel | Output Capacitance(Coss) | 205pF |
| Input Capacitance(Ciss) | 1.45nF | Pd - Power Dissipation | 350mW |
| Gate Charge(Qg) | 17.2nC@4.5V | Description | P-Channel 20V 4A 350mW Surface Mount SOT-23 |
| Mfr. Part # | CJ3415 R15 | Package | SOT-23 |
| Model Number | CJ3415 R15 |
The CJ3415 is a P-Channel MOSFET in a SOT-23 package, designed for load switching and PWM applications. It features excellent RDS(ON), low gate charge, and low gate voltages, making it suitable for efficient power management.
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current (t≤10s) | ID | -4.0 | A | |||
| Maximum Power Dissipation (t≤10s) | PD | 0.35 | W | |||
| Thermal Resistance from Junction to Ambient | RθJA | 357 | °C/W | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | ~+150 | °C | ||
| Static Parameters (Ta=25 °C unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -20 | V | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -0.3 | -0.56 | -1 | V |
| Gate-body leakage current | IGSS | VDS =0V, VGS =±8V | ±10 | ±1 | µA | |
| Zero gate voltage drain current | IDSS | VDS =-16V, VGS =0V | -1 | µA | ||
| Drain-source on-state resistance(note1) | RDS(on) | VGS =-4.5V, ID =-4A | 0.037 | 0.050 | Ω | |
| VGS =-2.5V, ID =-4A | 0.045 | 0.060 | ||||
| VGS =-1.8V, ID =-2A | 0.056 | 0.073 | ||||
| Forward transconductance(note2) | gFS | VDS =-5V, ID =-4A | 8 | S | ||
| Body diode voltage(note2) | VSD | IS=-1A,VGS =0V | -1 | V | ||
| Dynamic Parameters (note3) | ||||||
| Input capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 1450 | pF | ||
| Output capacitance | Coss | 205 | ||||
| Reverse transfer capacitance | Crss | 160 | ||||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 6.5 | Ω | ||
| Switching Parameters (note3) | ||||||
| Total gate charge | Qg | VDS =-10V,VGS =-4.5V,ID =-4A | 17.2 | nC | ||
| Gate-Source charge | Qgs | 1.3 | ||||
| Gate-drain charge | Qgd | 4.5 | ||||
| Turn-on delay time(note3) | td(on) | VDS=-10V, VGS=-4.5V RGEN =3Ω, RL=2.5Ω | 9.5 | ns | ||
| Turn-on rise time(note3) | tr | 17 | ||||
| Turn-off delay time(note3) | td(off) | 94 | ||||
| Turn-off fall time(note3) | tf | 35 | ||||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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