| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 4.3mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| Number | 1 N-channel |
| Pd - Power Dissipation | 250W |
| Output Capacitance(Coss) | 821pF |
| Input Capacitance(Ciss) | 6.66nF |
| Gate Charge(Qg) | 91nC@10V |
| Description | N-Channel 100V 130A 250W Surface Mount TO-263-2L |
| Mfr. Part # | CJB130SN10 |
| Package | TO-263-2L |
| Model Number | CJB130SN10 |
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Product Specification
| Drain to Source Voltage | 100V | Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 4.3mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | Number | 1 N-channel |
| Pd - Power Dissipation | 250W | Output Capacitance(Coss) | 821pF |
| Input Capacitance(Ciss) | 6.66nF | Gate Charge(Qg) | 91nC@10V |
| Description | N-Channel 100V 130A 250W Surface Mount TO-263-2L | Mfr. Part # | CJB130SN10 |
| Package | TO-263-2L | Model Number | CJB130SN10 |
The CJB130SN10 is an N-Channel Power MOSFET utilizing shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for high-efficiency power supplies and secondary synchronous rectifier applications.
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250uA | 100 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =80V, VGS =0V | 1.0 (TJ=25) | 100 (TJ=125) | A | |
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250uA | 4.0 | V | ||
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =12A | 4.3 | 5.5 | m | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =50V,VGS =0V, f =100KHz | 13320 | pF | ||
| Output capacitance | Coss | 1642 | pF | |||
| Reverse transfer capacitance | Crss | 34 | pF | |||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=50V, ID=22A | 91 | nC | ||
| Gate-source charge | Qgs | 23 | nC | |||
| Gate-drain charge | Qgd | 13 | nC | |||
| Turn-on delay time | td(on) | VDS=50V,ID=22A , VGS=10V,RG=2.2 | 28.2 | ns | ||
| Turn-on rise time | tr | 7.5 | ns | |||
| Turn-off delay time | td(off) | 81.9 | ns | |||
| Turn-off fall time | tf | 20.1 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=20A | 1.3 | V | ||
| Continuous drain-source diode forward current | IS | 130 | A | |||
| Pulsed drain-source diode forward current | ISM | 390 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 130 | A | |||
| Pulsed Drain Current | IDM | 390 | A | |||
| Single Pulsed Avalanche Energy | EAS | 600 | mJ | |||
| Power Dissipation | PD | 250 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 62.5 | /W | |||
| Thermal Resistance Junction to Case | RJC | 0.5 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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