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Hefei Purple Horn E-Commerce Co., Ltd.

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China Power MOSFET JSCJ CJB130SN10 N Channel Device Featuring Low Gate Charge and
China Power MOSFET JSCJ CJB130SN10 N Channel Device Featuring Low Gate Charge and

  1. China Power MOSFET JSCJ CJB130SN10 N Channel Device Featuring Low Gate Charge and

Power MOSFET JSCJ CJB130SN10 N Channel Device Featuring Low Gate Charge and

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Drain to Source Voltage 100V
Current - Continuous Drain(Id) 130A
Operating Temperature - -55℃~+150℃
RDS(on) 4.3mΩ@10V
Gate Threshold Voltage (Vgs(th)) 3V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 17pF
Number 1 N-channel
Pd - Power Dissipation 250W
Output Capacitance(Coss) 821pF
Input Capacitance(Ciss) 6.66nF
Gate Charge(Qg) 91nC@10V
Description N-Channel 100V 130A 250W Surface Mount TO-263-2L
Mfr. Part # CJB130SN10
Package TO-263-2L
Model Number CJB130SN10

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  1. Product Details
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Product Specification

Drain to Source Voltage 100V Current - Continuous Drain(Id) 130A
Operating Temperature - -55℃~+150℃ RDS(on) 4.3mΩ@10V
Gate Threshold Voltage (Vgs(th)) 3V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 17pF Number 1 N-channel
Pd - Power Dissipation 250W Output Capacitance(Coss) 821pF
Input Capacitance(Ciss) 6.66nF Gate Charge(Qg) 91nC@10V
Description N-Channel 100V 130A 250W Surface Mount TO-263-2L Mfr. Part # CJB130SN10
Package TO-263-2L Model Number CJB130SN10

Product Overview

The CJB130SN10 is an N-Channel Power MOSFET utilizing shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for high-efficiency power supplies and secondary synchronous rectifier applications.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
  • Device Code: CJB130SN10
  • Package: TO-263-2L
  • Marking: B130SN10 XXXX (Solid dot indicates Green molding compound device)

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Off Characteristics
Drain-source breakdown voltageV(BR)DSSVGS = 0V, ID =250uA100V
Gate-body leakage currentIGSSVDS =0V, VGS =20V100nA
Zero gate voltage drain currentIDSSVDS =80V, VGS =0V1.0 (TJ=25)100 (TJ=125)A
On Characteristics
Gate-threshold voltageVGS(th)VDS =VGS, ID =250uA4.0V
Static drain-source on-sate resistanceRDS(on)VGS =10V, ID =12A4.35.5m
Dynamic Characteristics
Input capacitanceCissVDS =50V,VGS =0V, f =100KHz13320pF
Output capacitanceCoss1642pF
Reverse transfer capacitanceCrss34pF
Switching Characteristics
Total gate chargeQgVGS=10V, VDS=50V, ID=22A91nC
Gate-source chargeQgs23nC
Gate-drain chargeQgd13nC
Turn-on delay timetd(on)VDS=50V,ID=22A , VGS=10V,RG=2.228.2ns
Turn-on rise timetr7.5ns
Turn-off delay timetd(off)81.9ns
Turn-off fall timetf20.1ns
Drain-Source Diode Characteristics
Drain-source diode forward voltageVSDVGS =0V, IS=20A1.3V
Continuous drain-source diode forward currentIS130A
Pulsed drain-source diode forward currentISM390A
Maximum Ratings
Drain-Source VoltageVDS100V
Gate-Source VoltageVGS20V
Continuous Drain CurrentID130A
Pulsed Drain CurrentIDM390A
Single Pulsed Avalanche EnergyEAS600mJ
Power DissipationPD250W
Thermal Resistance Junction to AmbientRJA62.5/W
Thermal Resistance Junction to CaseRJC0.5/W
Operating Junction and Storage Temperature RangeTJ ,Tstg-55+150

2411081729_JSCJ-CJB130SN10_C5182734.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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