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Hefei Purple Horn E-Commerce Co., Ltd.

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China N Channel Power MOSFET JSCJ CJAC1R3SN04C Featuring Low On Resistance and Robust
China N Channel Power MOSFET JSCJ CJAC1R3SN04C Featuring Low On Resistance and Robust

  1. China N Channel Power MOSFET JSCJ CJAC1R3SN04C Featuring Low On Resistance and Robust

N Channel Power MOSFET JSCJ CJAC1R3SN04C Featuring Low On Resistance and Robust

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Drain to Source Voltage 40V
Current - Continuous Drain(Id) 190A
RDS(on) 1.4mΩ@4.5V,30A
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 65pF
Number 1 N-channel
Output Capacitance(Coss) 1.85nF
Input Capacitance(Ciss) 5.31nF
Pd - Power Dissipation 96W
Gate Charge(Qg) 78.5nC@10V
Description N-Channel 40V 190A 96W Surface Mount PDFNWB5x6-8L
Mfr. Part # CJAC1R3SN04C
Package PDFNWB5x6-8L
Model Number CJAC1R3SN04C

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 40V Current - Continuous Drain(Id) 190A
RDS(on) 1.4mΩ@4.5V,30A Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 65pF Number 1 N-channel
Output Capacitance(Coss) 1.85nF Input Capacitance(Ciss) 5.31nF
Pd - Power Dissipation 96W Gate Charge(Qg) 78.5nC@10V
Description N-Channel 40V 190A 96W Surface Mount PDFNWB5x6-8L Mfr. Part # CJAC1R3SN04C
Package PDFNWB5x6-8L Model Number CJAC1R3SN04C

Product Overview

The CJAC1R3SN04C is an N-Channel enhancement mode power field-effect transistor utilizing SGT technology. This advanced technology is designed to minimize on-state resistance, offer superior switching performance, and withstand high energy pulses in avalanche and commutation modes. These devices are well-suited for high-efficiency, fast-switching applications.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Part Number: CJAC1R3SN04C
  • Package: PDFNWB5x6-8L
  • Marking: CJAC1R3SN04C

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
MAXIMUM RATINGS (TJ=25 unless otherwise noted)
Drain-Source VoltageVDS40V
Gate-Source VoltageVGS±20V
Continuous Drain CurrentIDTC=25°C190A
Pulsed Drain CurrentIDM760A
Single Pulsed Avalanche EnergyEASVDD=20V,VGS=10V, L=0.5mH, Rg=25Ω Starting TJ= 25°C670mJ
Power DissipationPDTC=25°C96W
Thermal Resistance from Junction to AmbientRθJA62.5°C/W
Thermal Resistance from Junction to CaseRθJC1.3°C/W
Operating Junction and Storage Temperature RangeTJ ,TSTG-55+150°C
ELECTRICAL CHARACTERISTICS (TJ=25 unless otherwise specified)
Off characteristics
Drain-source breakdown voltageV(BR)DSSVGS = 0V, ID =1mA40V
Zero gate voltage drain currentIDSSVDS =32V, VGS =0V1.01.25µA
Gate-body leakage currentIGSSVDS =0V, VGS =±20V±100nA
On characteristics
Gate-threshold voltageVGS(th)VDS =VGS, ID =250µA1.01.62.5V
Static drain-source on-sate resistanceRDS(on)VGS =10V, ID =30A1.01.4
Static drain-source on-sate resistanceRDS(on)VGS =4.5V, ID =30A1.42.0
Dynamic characteristics
Input capacitanceCissVDS =20V,VGS =0V, f = 100kHz5310pF
Output capacitanceCoss1850pF
Reverse transfer capacitanceCrss65pF
Switching characteristics
Total gate chargeQgVGS=10V, VDS=20V, ID=75A78.5nC
Gate-source chargeQgs14.5nC
Gate-drain chargeQgd15.7nC
Turn-on delay timetd(on)VDS=20V, VGS=10V, RL=0.4Ω , Rg=2.5Ω6.2ns
Turn-on rise timetr1.4ns
Turn-off delay timetd(off)22ns
Turn-off fall timetf7.8ns
Drain-Source Diode Characteristics
Drain-source diode forward voltageVSDVGS =0V, IS=30A1.3V
Continuous drain-source diode forward currentIS190A
Pulsed drain-source diode forward currentISM760A
Reverse recovery timetrrdiS/dt = 100A/μs, IS = 30A, VDD = 30V137ns
Reverse recovery chargeQrr438nC

2410121929_JSCJ-CJAC1R3SN04C_C19269023.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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