Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 1.4A |
| Operating Temperature - | -50℃~+150℃ |
| RDS(on) | 210mΩ@1.8V,0.3A |
| Gate Threshold Voltage (Vgs(th)) | 450mV |
| Reverse Transfer Capacitance (Crss@Vds) | 82pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 640pF |
| Pd - Power Dissipation | 290mW |
| Gate Charge(Qg) | - |
| Description | P-Channel 20V 1.4A 0.29W Surface Mount SOT-323 |
| Mfr. Part # | CJ2101 |
| Package | SOT-323 |
| Model Number | CJ2101 |
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Product Specification
| Drain to Source Voltage | 20V | Current - Continuous Drain(Id) | 1.4A |
| Operating Temperature - | -50℃~+150℃ | RDS(on) | 210mΩ@1.8V,0.3A |
| Gate Threshold Voltage (Vgs(th)) | 450mV | Reverse Transfer Capacitance (Crss@Vds) | 82pF |
| Number | 1 P-Channel | Input Capacitance(Ciss) | 640pF |
| Pd - Power Dissipation | 290mW | Gate Charge(Qg) | - |
| Description | P-Channel 20V 1.4A 0.29W Surface Mount SOT-323 | Mfr. Part # | CJ2101 |
| Package | SOT-323 | Model Number | CJ2101 |
The CJ2101 is a P-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, featuring leading trench technology for low RDS(on). This design contributes to extending battery life in various applications. It is ideal for high-side load switching, charging circuits, and single-cell battery applications found in devices such as cell phones, digital cameras, and PDAs.
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±8.0 | V | |||
| Continuous Drain Current | ID | (Ta=25) | -1.4 | A | ||
| Pulsed Drain Current | IDM | (tp=10µs) | -3.0 | A | ||
| Power Dissipation | PD | (Ta=25) | 0.29 | W | ||
| Thermal Resistance Junction to Ambient | RθJA | 431 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | Tstg | -50 | +150 | °C | ||
| OFF CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | VDSS | VGS = 0V, ID =-250µA | -20 | V | ||
| Gate-Source Leakage | IGSS | VDS =0V, VGS =±8V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-20V, VGS =0V | -1.0 | µA | ||
| ON CHARACTERISTICS | ||||||
| Gate-Source Threshold Voltage | VGS(th) | VDS =VGS, ID =-250µA | -0.45 | -0.7 | V | |
| Drain-Source On-State Resistance | RDS(on) | VGS =-4.5V, ID =-1.0A | 100 | mΩ | ||
| VGS =-2.5V, ID =-0.5A | 140 | mΩ | ||||
| VGS =-1.8V, ID =-0.3A | 210 | mΩ | ||||
| CHARGES AND CAPACITANCES | ||||||
| Input Capacitance | Ciss | (VDS =-8.0V,VGS =0V,f =1MHz) | 640 | pF | ||
| Output Capacitance | Coss | 120 | pF | |||
| Reverse Transfer Capacitance | Crss | 82 | pF | |||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(on) | (VGS=-4.5V,VDD=-4.0V, ID =-1.0A,RG=6.2Ω) | 6.2 | ns | ||
| Rise Time | tr | 15 | ns | |||
| Turn-Off Delay Time | td(off) | 26 | ns | |||
| Fall Time | tf | 18 | ns | |||
| Drain-source Body diode characteristics | ||||||
| Forward Diode Voltage | VSD | VGS =0V,IS=-0.3A | -0.62 | -1.2 | V | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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