Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 2.1mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Reverse Transfer Capacitance (Crss@Vds) | 600pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.4nF@15V |
| Pd - Power Dissipation | 130W |
| Gate Charge(Qg) | 60nC@4.5V |
| Description | 30V 150A 2.1mΩ@4.5V 1.2V 1 N-channel 130W PDFNWB-8L-EP(5x6) Single FETs, MOSFETs RoHS |
| Mfr. Part # | CJAC150N03 |
| Package | PDFNWB-8L-EP(5x6) |
| Model Number | CJAC150N03 |
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Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 2.1mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | Reverse Transfer Capacitance (Crss@Vds) | 600pF |
| Number | 1 N-channel | Input Capacitance(Ciss) | 5.4nF@15V |
| Pd - Power Dissipation | 130W | Gate Charge(Qg) | 60nC@4.5V |
| Description | 30V 150A 2.1mΩ@4.5V 1.2V 1 N-channel 130W PDFNWB-8L-EP(5x6) Single FETs, MOSFETs RoHS | Mfr. Part # | CJAC150N03 |
| Package | PDFNWB-8L-EP(5x6) | Model Number | CJAC150N03 |
The CJAC150N03, manufactured by JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery switches, load switches, SMPS, general-purpose applications, hard switched and high-frequency circuits, and Uninterruptible Power Supplies. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, an excellent package for good heat dissipation, and special process technology for high ESD capability.
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.2 | 1.6 | 2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =30A | 1.6 | m | ||
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =15A | 2.1 | m | ||
| Forward transconductance | gFS | VDS =10V, ID =2A | 17 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 5400 | pF | ||
| Output capacitance | Coss | |||||
| Reverse transfer capacitance | Crss | |||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=4.5V, VDS=15V, ID=24A | 60 | nC | ||
| Gate-source charge | Qgs | |||||
| Gate-drain charge | Qg | |||||
| Turn-on delay time | td(on) | VDS=15V,RL=0.75, VGS=10V,RG=1 | 20 | ns | ||
| Turn-on rise time | tr | |||||
| Turn-off delay time | td(off) | |||||
| Turn-off fall time | tf | |||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.0 | V | ||
| Continuous drain-source diode forward current | IS | 150 | A | |||
| Pulsed drain-source diode forward current | ISM | 600 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 150 | A | |||
| Pulsed Drain Current | IDM | 600 | A | |||
| Single Pulsed Avalanche Energy | EAS | 280 | mJ | |||
| Power Dissipation | PD | Ta=25 | 130 | W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Thermal Resistance Junction to Ambient | RJA | FR-4 board, 2oz. Copper, still air | 62.5 | /W | ||
| Thermal Resistance Junction to Case | RJC | 0.96 | /W | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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