Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 750mA |
| RDS(on) | 380mΩ@4.5V,650mA |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 13pF |
| Input Capacitance(Ciss) | 79pF |
| Pd - Power Dissipation | 150mW |
| Description | N-Channel 20V 750mA 150mW Surface Mount SOT-723 |
| Mfr. Part # | CJ3134K KF |
| Package | SOT-723 |
| Model Number | CJ3134K KF |
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Product Specification
| Drain to Source Voltage | 20V | Current - Continuous Drain(Id) | 750mA |
| RDS(on) | 380mΩ@4.5V,650mA | Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Type | N-Channel | Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| Number | 1 N-channel | Output Capacitance(Coss) | 13pF |
| Input Capacitance(Ciss) | 79pF | Pd - Power Dissipation | 150mW |
| Description | N-Channel 20V 750mA 150mW Surface Mount SOT-723 | Mfr. Part # | CJ3134K KF |
| Package | SOT-723 | Model Number | CJ3134K KF |
The CJ3134K is an N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for surface mount applications. It features low RDS(on) and operates at low logic level gate drive, making it suitable for load/power switching, interfacing switching, battery management for ultra-small portable electronics, and logic level shifts.
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Typical Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current (note 1) | ID | 0.75 | A | |||
| Pulsed Drain Current (tp=10s) | IDM | 1.8 | A | |||
| Power Dissipation (note 1) | PD | 150 | mW | |||
| Thermal Resistance from Junction to Ambient (note 1) | RJA | 833 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Lead Temperature for Soldering Purposes(1/8 from case for 10 s) | TL | 260 | ||||
| STATIC CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±10V, VDS = 0V | ±20 | µA | ||
| Gate threshold voltage (note 2) | VGS(th) | VDS =VGS, ID =250µA | 0.35 | 0.54 | 1.1 | V |
| Drain-source on-resistance (note 2) | RDS (on) | VGS =4.5V, ID =0.65A | 270 | 380 | mΩ | |
| VGS =2.5V, ID =0.55A | 320 | 450 | mΩ | |||
| VGS =1.8V, ID =0.45A | 390 | 800 | mΩ | |||
| Forward transconductance (note 2) | gFS | VDS =10V, ID =0.8A | 1.6 | S | ||
| Diode forward voltage | VSD | IS=0.15A, VGS = 0V | 1.2 | V | ||
| DYNAMIC CHARACTERISTICS (note 4) | ||||||
| Input capacitance | Ciss | VDS =16V,VGS =0V,f =1MHz | 79 | 120 | pF | |
| Output capacitance | Coss | VDS =16V,VGS =0V,f =1MHz | 13 | 20 | pF | |
| Reverse transfer capacitance | Crss | VDS =16V,VGS =0V,f =1MHz | 9 | 15 | pF | |
| SWITCHING CHARACTERISTICS (note 4) | ||||||
| Turn-on delay time (note 3) | td(on) | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω | 6.7 | ns | ||
| Turn-on rise time (note 3) | tr | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω | 4.8 | ns | ||
| Turn-off delay time (note3) | td(off) | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω | 17.3 | ns | ||
| Turn-off fall time (note 3) | tf | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω | 7.4 | ns | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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