| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -50℃~+150℃ |
| RDS(on) | 26mΩ@4.5V,4A |
| Gate Threshold Voltage (Vgs(th)) | 450mV |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF@10V |
| Number | 2 N-Channel |
| Output Capacitance(Coss) | 155pF |
| Pd - Power Dissipation | 1.5W |
| Input Capacitance(Ciss) | 800pF@10V |
| Gate Charge(Qg) | 11nC |
| Description | N-Channel Array 20V 5A 1.5W Surface Mount SOT-26 |
| Mfr. Part # | NM8205 |
| Package | SOT-26 |
| Model Number | NM8205 |
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Product Specification
| Drain to Source Voltage | 20V | Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -50℃~+150℃ | RDS(on) | 26mΩ@4.5V,4A |
| Gate Threshold Voltage (Vgs(th)) | 450mV | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF@10V | Number | 2 N-Channel |
| Output Capacitance(Coss) | 155pF | Pd - Power Dissipation | 1.5W |
| Input Capacitance(Ciss) | 800pF@10V | Gate Charge(Qg) | 11nC |
| Description | N-Channel Array 20V 5A 1.5W Surface Mount SOT-26 | Mfr. Part # | NM8205 |
| Package | SOT-26 | Model Number | NM8205 |
The NM8205 is a Dual N-channel Enhancement Mode Power MOSFET from Jingdao Microelectronics, featuring advanced Trench Technology. It offers excellent RDS(ON) and low gate charge, making it suitable for load switching, power management, and PWM applications. This lead-free product is designed for high efficiency and reliable performance.
| Parameter | Symbol | Conditions | Minimum | Typical | Maximum | Units |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | ±10 | V | |||
| Continuous Drain Current | ID | TA=25 | 5 | A | ||
| Continuous Drain Current | ID | TA=100 | 3.2 | A | ||
| Pulsed Drain Current | IDM | TA=25 | 20 | A | ||
| Power Dissipation | PD | TA=25 | 1.5 | W | ||
| Thermal Resistance, Junction to Ambient | RθJA | 83.3 | /W | |||
| Operating and Storage Temperature Range | TJ,TSTG | -50 | +150 | |||
| Electrical Characteristics (TA=25 unless otherwise specied) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250uA | 20 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=20V,VGS=0V | 0.7 | V | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=2.5V,ID=3.0A | 20 | 21 | mΩ | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=4.0A | 20 | mΩ | ||
| Gate-to-Source Leakage Current | IGSS | VGS=0V,ID=250uA | ±100 | nA | ||
| Gate-Body Leakage Current | IDSS | VDS=20V,VGS=0V | ±1 | uA | ||
| Input Capacitance | Ciss | VDS=10V,VGS=0V, f=1.0MHz | 800 | pF | ||
| Output Capacitance | Coss | VDS=10V,VGS=0V, f=1.0MHz | 125 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V, f=1.0MHz | 155 | pF | ||
| Total Gate Charge | Qg | VDS=10V,VGS=4.5V, ID=3A | 11 | 18 | nC | |
| Gate-Source Charge | Qgs | VDS=10V,VGS=4.5V, ID=3A | 2.3 | nC | ||
| Gate-Drain(Miller) Charge | Qgd | VDS=10V,VGS=4.5V, ID=3A | 2.5 | nC | ||
| Turn-on Delay Time | td(on) | RGEN=3Ω | 5 | ns | ||
| Turn-on Rise Time | tr | RGEN=3Ω | 11 | ns | ||
| Turn-o Delay Time | td(off) | RGEN=3Ω | 20 | ns | ||
| Turn-o Fall Time | tf | RGEN=3Ω | 43 | ns | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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