Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 300A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 1.8mΩ@10V,100A |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Reverse Transfer Capacitance (Crss@Vds) | 950pF@25V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.36nF@25V |
| Pd - Power Dissipation | 312.5W |
| Gate Charge(Qg) | 250nC@10V |
| Description | 40V 300A 1.8mΩ@10V,100A 1V 1 N-channel 312.5W TO-220 Single FETs, MOSFETs RoHS |
| Mfr. Part # | FTP02N04NA |
| Package | TO-220 |
| Model Number | FTP02N04NA |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 40V | Current - Continuous Drain(Id) | 300A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 1.8mΩ@10V,100A |
| Gate Threshold Voltage (Vgs(th)) | 1V | Reverse Transfer Capacitance (Crss@Vds) | 950pF@25V |
| Number | 1 N-channel | Input Capacitance(Ciss) | 14.36nF@25V |
| Pd - Power Dissipation | 312.5W | Gate Charge(Qg) | 250nC@10V |
| Description | 40V 300A 1.8mΩ@10V,100A 1V 1 N-channel 312.5W TO-220 Single FETs, MOSFETs RoHS | Mfr. Part # | FTP02N04NA |
| Package | TO-220 | Model Number | FTP02N04NA |
The FTP02N04NA is a high-performance N-Channel MOSFET designed for power switching applications. It features low ON resistance, low gate charge, and a robust design suitable for adaptors, chargers, and Switched-Mode Power Supplies (SMPS). This RoHS compliant component offers reliable performance with excellent thermal management capabilities.
| Symbol | Parameter | Min. | Typ. | Max. | Units | Test Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-to-Source Voltage | 40 | V | TC=25 unless otherwise specified | ||
| ID | Continuous Drain Current | 300 | A | TC=25 unless otherwise specified | ||
| ID | Continuous Drain Current | 197 | A | TC = 100 C | ||
| IDM | Pulsed Drain Current (NOTE *1) | 1200 | A | |||
| VGS | Gate-to-Source Voltage | 20 | V | |||
| EAS | Single Pulse Avalanche Energy(NOTE *2) | 800 | mJ | |||
| PD | Power Dissipation | 312.5 | W | |||
| TL | Maximum Temperature for Soldering | 300 | ||||
| TJ and TSTG | Operating Junction and Storage Temperature Range | -55 | 150 | |||
| Thermal Resistance | ||||||
| RJC | Junction-to-Case | 0.4 | W | Water cooled heatsink, PD adjusted for a peak junction temperature of +150. | ||
| RJA | Junction-to-Ambient | 62.5 | W | 1 cubic foot chamber, free air. | ||
| OFF Characteristics | ||||||
| BVDSS | Drain-to-Source Breakdown Voltage | 40 | -- | -- | V | VGS=0V, ID=250A |
| IDSS | Drain-to-Source Leakage Current | -- | -- | 1 | A | VDS=40V, VGS=0V TC=25 |
| IDSS | Drain-to-Source Leakage Current | -- | -- | 100 | A | VDS=32V, VGS=0V TC=125 |
| IGSS | Gate-to-Source Forward Leakage | -- | -- | +100 | nA | VGS=+20V |
| IGSS | Gate-to-Source Reverse Leakage | -- | -- | -100 | nA | VGS= -20V |
| ON Characteristics | ||||||
| RDS(ON) | StaticDrain-to-Source On-Resistance | -- | 1.8 | 2.3 | m | VGS=10V, ID=100A |
| VGS(TH) | Gate Threshold Voltage | 1 | -- | 3 | V | VDS=VGS,ID=250A |
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Source Current (Body Diode) | -- | -- | 300 | A | Tc=25 unless otherwise specified |
| ISM | Maximum Pulsed Current (Body Diode) | -- | -- | 1200 | A | |
| VSD | Diode Forward Voltage | -- | -- | 1.5 | V | ISD=100A,VGS=0V |
| trr | Reverse Recovery Time | -- | 40 | -- | ns | IF= 50A di/dt=100A/us |
| Qrr | Reverse Recovery Charge | -- | 45 | -- | uC | Pulse width 300s; duty cycle 2% |
| Dynamic Characteristics | ||||||
| Rg | Gate resistance | -- | 1.7 | -- | VGS=0V, VDS=0V, f=1MHz | |
| Ciss | Input Capacitance | -- | 14360 | -- | pF | VGS= 0V,VDS = 25V f =1.0MHz |
| Coss | Output Capacitance | -- | 1177 | -- | pF | VGS= 0V,VDS = 25V f =1.0MHz |
| Crss | Reverse Transfer Capacitance | -- | 950 | -- | pF | VGS= 0V,VDS = 25V f =1.0MHz |
| Qg | Total Gate Charge | -- | 250 | -- | nC | ID=100A,VDD=20V VGS = 10V |
| Qgs | Gate-to-Source Charge | -- | 57 | -- | nC | ID=100A,VDD=20V VGS = 10V |
| Qgd | Gate-to-Drain (Miller) Charge | -- | 60 | -- | nC | ID=100A,VDD=20V VGS = 10V |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!