| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 60A |
| RDS(on) | 11mΩ@10V,30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 150W |
| Description | 60V 60A 11mΩ@10V,30A 2V 150W TO-3PN Single FETs, MOSFETs RoHS |
| Mfr. Part # | 2SK2313 |
| Package | TO-3PN |
| Model Number | 2SK2313 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 60V | Current - Continuous Drain(Id) | 60A |
| RDS(on) | 11mΩ@10V,30A | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V | Pd - Power Dissipation | 150W |
| Description | 60V 60A 11mΩ@10V,30A 2V 150W TO-3PN Single FETs, MOSFETs RoHS | Mfr. Part # | 2SK2313 |
| Package | TO-3PN | Model Number | 2SK2313 |
The ISC 2SK2313 is an N-Channel MOSFET transistor designed for low voltage, high-speed applications. It features a high drain current of 60A, a drain-source voltage of 60V (Min), fast switching speed, and is 100% avalanche tested, ensuring robust device performance and reliable operation. This MOSFET is ideal for chopper regulators, DC-DC converters, and motor drive applications.
| Symbol | Parameter | Conditions | Min | Typ. | Max | Unit |
| VDSS | Drain-Source Voltage (VGS=0) | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Drain Current-continuous@ TC=25 | 60 | A | |||
| Ptot | Total Dissipation@TC=25 | 150 | W | |||
| Tj | Max. Operating Junction Temperature | 150 | ||||
| Tstg | Storage Temperature Range | -55 | ~ | 150 | ||
| Rth j-c | Thermal Resistance,Junction to Case | 0.83 | /W | |||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0; ID= 10mA | 60 | V | ||
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250µA | 0.8 | 2 | V | |
| RDS(ON) | Drain-Source On-stage Resistance | VGS= 10V; ID=30A | 11 | mΩ | ||
| IGSS | Gate Source Leakage Current | VGS= ±16V; VDS= 0 | ±10 | µA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=60V; VGS= 0 | 100 | µA | ||
| VSD | Diode Forward Voltage | IS=30A; VGS=0 | 1.2 | V |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!