Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 10A |
| RDS(on) | 1Ω@10V,5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| Pd - Power Dissipation | 65W |
| Input Capacitance(Ciss) | 1.601nF@15V |
| Gate Charge(Qg) | 35nC@10V |
| Description | 650V 10A 65W Through Hole TO-220F-3L |
| Mfr. Part # | F10N65L |
| Package | TO-220F-3L |
| Model Number | F10N65L |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 10A |
| RDS(on) | 1Ω@10V,5A | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V | Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| Pd - Power Dissipation | 65W | Input Capacitance(Ciss) | 1.601nF@15V |
| Gate Charge(Qg) | 35nC@10V | Description | 650V 10A 65W Through Hole TO-220F-3L |
| Mfr. Part # | F10N65L | Package | TO-220F-3L |
| Model Number | F10N65L |
The F10N65L is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It offers superior characteristics including fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is ideal for use in switching power supplies and adaptors.
| Parameter | Symbol | Rating | Unit | Test Conditions |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 650 | V | Ta=25C, Unless Otherwise Specified |
| Gate-Source Voltage | VGSS | ±30 | V | Ta=25C, Unless Otherwise Specified |
| Continuous Drain Current | ID | 10 | A | Tc=25C |
| Pulsed Drain Current | IDM | 40 | A | Note 2 |
| Avalanche Energy Single Pulsed | EAS | 6.3 | mJ | Note 3 |
| Power Dissipation | PD | 500 | W | Tc = 25C |
| Operating junction and storage temperature | TJ,TSTG | -55 ~+150 | °C | |
| Thermal Resistance | ||||
| Thermal resistance, junction – case | RthJC | 4.0 | °C/W | Tc=25°C |
| Thermal resistance, junction – case | RthJC | 63 | °C/W | Tc=100°C |
| Thermal resistance, junction – ambient(min. footprint) | RthJA | 35 | °C/W | |
| Electrical Characteristics | ||||
| Off Characteristics | Ta=25°C, Unless Otherwise Specified | |||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V,ID=250uA |
| Gate-Source Leakage Current | IGSS | ±1.0 | μA | VGS=±30V,VDS=0V |
| Drain-Source Leakage Current | IDSS | 1.0 | μA | VDS=650V,VGS=0V |
| On Characteristics | ||||
| Static Drain-Source On-State Resistance | RDS(ON) | 1.0 | Ω | VGS=10V,ID=5.0A |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250uA |
| Dynamic Characteristics | ||||
| Input Capacitance | CISS | 160 | pF | VDS=15V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 137 | pF | VDS=15V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 11 | pF | VDS=15V, VGS=0V, f=1.0MHz |
| Total Gate Charge | QG | 32 | nC | VDS=520V,VGS=10V, ID=10A (NOTE1,2) |
| Gate-Drain Charge | QGD | 4.2 | nC | VDS=520V,VGS=10V, ID=10A (NOTE1,2) |
| Gate-Source Charge | QGS | 1.4 | nC | VDS=520V,VGS=10V, ID=10A (NOTE1,2) |
| Turn-On Delay Time | tD(ON) | 15 | ns | VDS=325V,VGS=10V, RG=25Ω,ID=10A (NOTE1,2) |
| Turn-On Rise Time | tR | 90 | ns | VDS=325V,VGS=10V, RG=25Ω,ID=10A (NOTE1,2) |
| Turn-Off Delay Time | tD(OFF) | 18 | ns | VDS=325V,VGS=10V, RG=25Ω,ID=10A (NOTE1,2) |
| Turn-Off Fall Time | tF | 23 | ns | VDS=325V,VGS=10V, RG=25Ω,ID=10A (NOTE1,2) |
| Drain-source Diode Characteristics And Maximum Ratings | ||||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | ISD=10A,VGS=0V (Note 1) |
| Maximum Body-Diode Continuous Current | IS | 10 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 40 | A | |
| Reverse Recovery Time | trr | 320 | ns | IF=10A di/dt=100A/us ,VGS=0V (Note 1) |
| Reverse Recovery Charge | Qrr | 4.2 | μC | IF=10A di/dt=100A/us ,VGS=0V (Note 1) |
| Transconductance | gfs | 4.8 | S | VDS=15V,ID=2A |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!