Hefei Purple Horn E-Commerce Co., Ltd.
| Configuration | - |
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 77mΩ@20V |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Output Capacitance(Coss) | 62pF |
| Input Capacitance(Ciss) | 1.377nF |
| Pd - Power Dissipation | 188W |
| Gate Charge(Qg) | 61nC |
| Description | 1.2kV 35A 77mΩ@20V 4V 188W TO-247-4 Single FETs, MOSFETs RoHS |
| Mfr. Part # | CMS120N080WK |
| Package | TO-247-4 |
| Model Number | CMS120N080WK |
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Product Specification
| Configuration | - | Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 35A | Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 77mΩ@20V | Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | N-Channel | Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Output Capacitance(Coss) | 62pF | Input Capacitance(Ciss) | 1.377nF |
| Pd - Power Dissipation | 188W | Gate Charge(Qg) | 61nC |
| Description | 1.2kV 35A 77mΩ@20V 4V 188W TO-247-4 Single FETs, MOSFETs RoHS | Mfr. Part # | CMS120N080WK |
| Package | TO-247-4 | Model Number | CMS120N080WK |
The Bruckewell CMS120N080WK is a SiC N-Channel 1200-V (D-S) MOSFET designed for high-speed switching applications. It offers high blocking voltage and fast reverse recovery, leading to low capacitance and high system efficiency. This MOSFET is ideal for demanding applications such as solar inverters, switch mode power supplies, UPS, induction heating and welding, EV charging stations, and high voltage DC/DC converters. Its easy paralleling capability further enhances its versatility in various power electronics designs.
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Maximum Ratings and Electrical Characteristics | ||||||
| VDS | Drain-Source Voltage | 1200 | V | |||
| VGS | Gate-Source Voltage | -5 | 20 | V | ||
| ID | Continuous Drain Current (TC =25C) | 35 | A | |||
| ID | Continuous Drain Current(TC =100C) | 25 | A | |||
| ID,pulse | Pulsed Drain Current | 80 | A | |||
| Ptot | Power Dissipation (TC =25C) | 188 | W | |||
| EAS | Single Pulse Avalanche Energy | IAS=20A ,V=50V, L =1mH | 200 | mJ | ||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | 175 | C | ||
| Thermal Resistance Ratings | ||||||
| RJA | Maximum Junction-to-Ambient | 40 | C/W | |||
| RJC | Maximum Junction-to-Case | 0.8 | C/W | |||
| Static Electrical Characteristics | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =10mA | 2.0 | 2.8 | 4.0 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =1mA | 1200 | - | - | V |
| IGSS+ | Gate-Source Leakage Current | VDS =0V, VGS =20V | - | 0.1 | 100 | nA |
| IGSS- | Gate-Source Leakage Current | VDS =0V, VGS =-5V | - | - | -100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =1200V, VGS =0V | - | - | 1.0 | A |
| IDSS | Drain-Source Leakage Current | VDS =1200V, VGS =0V, TJ =175C | - | 1.0 | - | A |
| RDS (on) | Static Drain-Source On-Resistance | VGS =20V, ID =20A | - | 77 | 100 | m |
| RDS (on) | Static Drain-Source On-Resistance | VGS =20V, ID =10A | - | 71 | 90 | m |
| RDS (on) | Static Drain-Source On-Resistance | VGS =20V, ID =20A, TJ =125C | - | 106 | - | m |
| RDS (on) | Static Drain-Source On-Resistance | VGS =20V, ID =20A, TJ =175C | - | 134 | - | m |
| Rg | Gate Input Resistance | f =1MHz,VAC =25mV, D-S short | - | 3.0 | - | |
| AC Electrical Characteristics | ||||||
| Qg | Total Gate Charge | VDD=800 V, IDS=20 A, VGS=-5/20V | - | 61 | - | nC |
| Qgs | Gate-Source Charge | - | 24 | - | nC | |
| Qgd | Gate-Drain Charge | - | 14 | - | nC | |
| td(on) | Turn-On Delay Time | VDD=800 V, IDS=20 A, RG(ext)=2.5 , VGS=-5/+20 V, L=975 H | - | 9 | - | ns |
| tr | Rise Time | - | 4 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 15 | - | ns | |
| tf | Fall Time | - | 10 | - | ns | |
| CISS | Input Capacitance | VGS=0 V, VDS=1000 V, f=200 kHz, VAC=25mV | - | 1377 | - | pF |
| COSS | Output Capacitance | - | 62 | - | pF | |
| CRSS | Reverse Transfer Capacitance | - | 4 | - | pF | |
| Eoss | Coss Stored Energy | - | 38 | - | J | |
| Eon | Turn-On Switching Energy | VDD=800 V, IDS=20 A, RG(ext)=2.5 , VGS=-5/+20 V, L=975 H | - | 208 | - | J |
| Eoff | Turn-Off Switching Energy | - | 25 | - | J | |
| Etot | Total Switching Energy | - | 233 | - | J | |
| Body Diode Characteristics | ||||||
| IS | Max Continuous Diode Forward Current | VGS=-5 V, TC=25 C | - | - | 43 | A |
| VSD | Diode Forward Voltage | VGS=-5 V, IS=10 A | - | 3.8 | - | V |
| trr | Reverse Recovery Time | IS=20 A, VR=800 V, VGS=-5 V, di/dt=8 A/s | - | 8 | - | ns |
| Qrr | Reverse Recovery Charge | - | 130 | - | nC | |
| Irrm | Peak Reverse Recovery Current | - | 29 | - | A | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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