Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 650V |
| Configuration | - |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | - |
| RDS(on) | 900mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 140pF |
| Input Capacitance(Ciss) | 1.72nF |
| Pd - Power Dissipation | 31W |
| Gate Charge(Qg) | 32nC@10V |
| Description | N-Channel 650V 10A 31W Through Hole TO-220F |
| Mfr. Part # | BMF10N65 |
| Package | TO-220F |
| Model Number | BMF10N65 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 650V | Configuration | - |
| Current - Continuous Drain(Id) | 10A | Operating Temperature - | - |
| RDS(on) | 900mΩ@10V | Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | N-Channel | Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| Number | 1 N-channel | Output Capacitance(Coss) | 140pF |
| Input Capacitance(Ciss) | 1.72nF | Pd - Power Dissipation | 31W |
| Gate Charge(Qg) | 32nC@10V | Description | N-Channel 650V 10A 31W Through Hole TO-220F |
| Mfr. Part # | BMF10N65 | Package | TO-220F |
| Model Number | BMF10N65 |
The BMx10N65 is a high-performance N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Designed for power switch circuits in adaptors and chargers, this MOSFET offers a VDSS of 650V and a continuous drain current (ID) of 10A. It features fast switching capabilities and low gate charge, making it an efficient component for power conversion applications. The device is constructed with molded plastic, rated UL Flammability Classification 94V-0, and is compliant with the EU RoHS 2011/65/EU directive.
| Symbol | Parameters | Conditions | Value | Unit | TO-220AB/TO-263 | TO-220F |
|---|---|---|---|---|---|---|
| Maximum Ratings (@TA=25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 650 | V | |||
| VGS | Gate-Source Voltage | ±30 | V | |||
| ID | Continue Drain Current | 10 | A | |||
| IDM | Pulsed Drain Current (Note1) | 40 | A | |||
| PD | Power Dissipation | 150 | W | 31 | ||
| EAS | Single Pulse Avalanche Energy (Note1) | 845 | mJ | |||
| TJ | Junction Temperature Range | -55 to +150 | C | |||
| TSTG | Storage Temperature Range | -55 to +150 | C | |||
| RJC | Thermal Resistance, Junction to Case | 0.83 | C/W | 4 | ||
| RJA | Thermal Resistance, Junction to Ambient | 62.5 | C/W | |||
| Electrical Characteristics (TA=25C unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID=250uA | 650 690 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS=0V | 1 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = ±30V, VDS=0V | ±100 | nA | ||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, ID=250uA | 2 4 | V | ||
| RDS(on) | Static Drain-source On Resistance | VGS=10V, ID=5A | 0.79 0.9 | |||
| gfs | Forward Transconductance | VDS=40V, ID=5A | 11 | S | ||
| Ciss | Input capacitance | VDS = 25V, VGS =0V, f = 1MHz | 1720 | pF | ||
| Coss | Output capacitance | 140 | pF | |||
| Crss | Reverse transfer capacitance | 11 | pF | |||
| td(on) | Turn-on delay time (Note1) | VDD=325V, ID =10A, RG =25 | 23 | ns | ||
| tr | Turn-on Rise time (Note1) | 15 | ns | |||
| td(off) | Turn -Off Delay Time (Note1) | 90 | ns | |||
| tf | Turn -Off Fall time (Note1) | 30 | ns | |||
| Qgs | Gate to Source Charge (Note1) | VDD=520V, VGS=10V, ID=10A | 5 | nC | ||
| Qgd | Gate to Drain Charge (Note1) | 16 | nC | |||
| Qg | Total Gate Charge (Note1) | 32 | nC | |||
| VSD | Diode Forward Voltage | ISD=10A | 1.1 | V | ||
| IS | Diode Forward Current | 10 | A | |||
| ISM | Diode Pulsed Current | 40 | A | |||
| Trr | Reverse Recovery Time (Note1) | ISD =10A, VGS=0V, dIF/dt=100A/s | 310 | ns | ||
| Qrr | Reverse Recovery Charge (Note1) | 4.1 | C | |||
| Ordering Information | ||||||
| Order Code | Package | Base Qty | Delivery Mode | |||
| BME10N65/G | TO-220AB | 50pcs/tube | 1kpcs/box, 5kpcs/carton | |||
| BMF10N65/G | TO-220F | 50pcs/tube | 1kpcs/box, 5kpcs/carton | |||
| BMK10N65/G | TO-263 | 50pcs/tube | 1kpcs/box, 5kpcs/carton | |||
| BMK10N65-R/G | TO-263 | 800pcs/reel | 800pcs/box, 4kpcs/carton | |||
Note1: Pulse test: 300 s pulse width, 2% duty cycle.
Note: The order code with "G" means using a thick frame.
Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!