Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 4.2A |
| RDS(on) | 40mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 900mV@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 55pF |
| Input Capacitance(Ciss) | 390pF |
| Pd - Power Dissipation | 1.4W |
| Gate Charge(Qg) | 4.4nC@10V |
| Description | N-Channel 30V 4.2A 1.4W Surface Mount SOT-23 |
| Mfr. Part # | AO3402-ES |
| Package | SOT-23 |
| Model Number | AO3402-ES |
View Detail Information
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Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 4.2A |
| RDS(on) | 40mΩ@10V | Gate Threshold Voltage (Vgs(th)) | 900mV@250uA |
| Type | N-Channel | Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| Number | 1 N-channel | Output Capacitance(Coss) | 55pF |
| Input Capacitance(Ciss) | 390pF | Pd - Power Dissipation | 1.4W |
| Gate Charge(Qg) | 4.4nC@10V | Description | N-Channel 30V 4.2A 1.4W Surface Mount SOT-23 |
| Mfr. Part # | AO3402-ES | Package | SOT-23 |
| Model Number | AO3402-ES |
The AO3402-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and features a high-density cell design for low on-resistance, reliability, and avalanche rating.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | 4.2 | A | ||
| Continuous Drain Current | ID | TA=75°C | 3.3 | A | ||
| Maximum Power Dissipation | PD | 1.4 | W | |||
| Pulsed Drain Current | IDM | 15.6 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 90 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.6 | 0.9 | 1.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=3.6A | 40 | 51 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=2A | 43 | 54 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=1A | 55 | 69 | mΩ | |
| Forward transconductance | gfs | VDS=5V, ID=3.6A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 390 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 55 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 41 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V, ID=3.6A | 4.4 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=15V, ID=3.6A | 0.6 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=15V, ID=3.6A | 1.4 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, RL=3.5Ω, RG=6Ω | 3.3 | ns | ||
| Rise Time | tr | VGS=10V, VDS=15V, RL=3.5Ω, RG=6Ω | 1 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=15V, RL=3.5Ω, RG=6Ω | 21.7 | ns | ||
| Fall Time | tf | VGS=10V, VDS=15V, RL=3.5Ω, RG=6Ω | 2.1 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=3.6A | 1.5 | V | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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