| Drain to Source Voltage | 50V |
| Current - Continuous Drain(Id) | 220mA |
| RDS(on) | 3.5Ω@10V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V@1mA |
| Pd - Power Dissipation | 350mW |
| Description | 50V 0.22A 350mW Surface Mount SOT-23 |
| Mfr. Part # | BSS138LT1G-CN |
| Package | SOT-23 |
| Model Number | BSS138LT1G-CN |
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Product Specification
| Drain to Source Voltage | 50V | Current - Continuous Drain(Id) | 220mA |
| RDS(on) | 3.5Ω@10V | Gate Threshold Voltage (Vgs(th)) | 1.5V@1mA |
| Pd - Power Dissipation | 350mW | Description | 50V 0.22A 350mW Surface Mount SOT-23 |
| Mfr. Part # | BSS138LT1G-CN | Package | SOT-23 |
| Model Number | BSS138LT1G-CN |
This TrenchFET Power MOSFET is designed for load switching in portable devices and DC/DC converters. It features a SOT-23 package and is suitable for any mounting position. The material is epoxy with a UL 94V-0 flammability rating.
| Parameter | Symbol | Test Condition | Value | Unit |
|---|---|---|---|---|
| Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified) | ||||
| Drain-Source Voltage | VDS | 50 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current | ID | 0.22 | A | |
| Power Dissipation | PD | 350 | mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -50-+150 | ||
| Thermal Resistance From Junction to Ambient | JA | 357 | /W | |
| Electrical Characteristics (TA = 25 unless otherwise specified) | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250uA | 50 | V |
| Gate-Threshold voltage (note1) | VGS (th) | VDS=VGS, ID=1mA | 1.5 | V |
| Gate-Threshold voltage (note1) | VGS (th) | VDS=VGS, ID=1mA | 0.8 | V |
| Gate-body Leakage | IGSS | VDS=0V, VGS=20V | 100 | nA |
| Zero Gate Voltage Drain current | IDSS | VDS=50V, VGS=0V | 0.5 | uA |
| Zero Gate Voltage Drain current | IDSS | VDS=30V, VGS=0V | 0.1 | uA |
| Drain Source On Resistance (note 1) | RDS(ON) | VGS=10V, ID=0.22A | 3.5 | |
| Drain Source On Resistance (note 1) | RDS(ON) | VGS=4.5V, ID=0.22A | 6 | |
| Forward trans conductance (note1) | gfs | VDS=10V, ID=0.22A | 0.12 | S |
| Diode forward voltage (note1) | VSD | IS=0.44A, VGS=0V | 1.4 | V |
| Dynamic (note2) | ||||
| Input capacitance | Ciss | VDS=25V, VGS=0V,f=1MHz | 27 | pF |
| Output capacitance | Coss | VDS=25V, VGS=0V,f=1MHz | 13 | pF |
| Reverse Transfer capacitance | Crss | VDS=25V, VGS=0V,f=1MHz | 6 | pF |
| Switching (note1,2) | ||||
| Turn-on Time | td(on) | VDD=30V, RGEN=6, VDS=10V, ID0.29A | 5 | ns |
| Rise time | tr | VDD=30V, RGEN=6, VDS=10V, ID0.29A | 18 | ns |
| Turn-off Time | td(off) | VDD=30V, RGEN=6, VDS=10V, ID0.29A | 36 | ns |
| Fall time | tf | VDD=30V, RGEN=6, VDS=10V, ID0.29A | 14 | ns |
Notes:
a. Pulse Test: Pulse Width 300us, Duty Cycle2%.
b. These parameters have no way to verify.
Precautions:
PCB Design Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs.
Notice:
The information presented in this document is for reference only. ChipNobo reserves the right to adjust product indicators and upgrade some technical parameters for product optimization and productivity improvement. ChipNobo is exempt from liability for any delay or non-delivery of information disclosure.
This product is designed for residential and commercial equipment and does not support sensitive items and specialized equipment in sanctioned areas. ChipNobo Co., Ltd assumes no responsibility or liability for any damages resulting from improper use.
For additional information, please visit our website http://www.chipnobo.com, or consult your nearest Chipnobo sales office.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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