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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China power mosfet Chongqing Pingwei Tech 10N50TF designed for 10A drain current and
China power mosfet Chongqing Pingwei Tech 10N50TF designed for 10A drain current and

  1. China power mosfet Chongqing Pingwei Tech 10N50TF designed for 10A drain current and

power mosfet Chongqing Pingwei Tech 10N50TF designed for 10A drain current and

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Configuration -
Drain to Source Voltage 500V
Current - Continuous Drain(Id) 10A
Operating Temperature - -55℃~+150℃
RDS(on) 750mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)) 2V
Reverse Transfer Capacitance (Crss@Vds) 8.4pF
Number 1 N-channel
Input Capacitance(Ciss) 1.62nF@25V
Pd - Power Dissipation 40W
Gate Charge(Qg) 32nC@400V
Description 500V 10A 750mΩ@10V,5A 2V 1 N-channel 40W TO-220 Single FETs, MOSFETs RoHS
Mfr. Part # 10N50TF
Package TO-220
Model Number 10N50TF

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  1. Product Details
  2. Company Details

Product Specification

Configuration - Drain to Source Voltage 500V
Current - Continuous Drain(Id) 10A Operating Temperature - -55℃~+150℃
RDS(on) 750mΩ@10V,5A Gate Threshold Voltage (Vgs(th)) 2V
Reverse Transfer Capacitance (Crss@Vds) 8.4pF Number 1 N-channel
Input Capacitance(Ciss) 1.62nF@25V Pd - Power Dissipation 40W
Gate Charge(Qg) 32nC@400V Description 500V 10A 750mΩ@10V,5A 2V 1 N-channel 40W TO-220 Single FETs, MOSFETs RoHS
Mfr. Part # 10N50TF Package TO-220
Model Number 10N50TF

Product Overview

The 10N50TF is a N-CHANNEL Power MOSFET designed for high-performance applications. It features a 10A continuous drain current rating, 500V drain-source voltage, and a low on-state resistance of 0.75 maximum at VGS=10V/5A. Key advantages include low gate charge, low Ciss, fast switching speeds, and improved dv/dt capability. This MOSFET is 100% avalanche tested and offers enhanced reliability. It is suitable for applications requiring efficient power switching and robust performance.

Product Attributes

  • Brand: Perfectway
  • Model: 10N50TF
  • Package: TO-220TF
  • Certifications: Halogen free

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (TC=25, unless otherwise noted)
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS 30 V
Continuous Drain Current ID 10 A
Pulsed Drain Current (Note 1) IDM 40 A
Single Pulse Avalanche Energy (Note 2) EAS 580 mJ
Reverse Diode dV/dt (Note 3) dv/dt 5 V/ns
Operating Junction and Storage Temperature Range TJ,TSTG -55 +150
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds TL 260
Mounting Torque (6-32 or M3 screw) 1.1 Nm
Thermal resistance, Channel to Case Rth(ch-c) 3.13 /W
Thermal resistance, Channel to Ambient Rth(ch-a) 62.5 /W
Maximum Power Dissipation (TC=25) PD 40 W
Electrical Characteristics (Tc=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 500 - - V
Breakdown Temperature Coefficient BVDSS /TJ Reference to 25, ID=250uA - 0.6 - V/
Zero Gate Voltage Drain Current IDSS VDS=500V, VGS=0V - - 1 uA
Gate-Body Leakage Current, Forward IGSSF VGS=30V, VDS=0V - - 100 nA
Gate-Body Leakage Current, Reverse IGSSR VGS=-30V, VDS=0V - - -100 nA
Gate-Source Threshold Voltage VGS(th) VDS=VGS, ID=250uA 2 - 4 V
Drain-Source On-State Resistance RDS(on) VGS=10V, ID=5A - 0.5 0.75
Dynamic Characteristics
Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 1620 - pF
Output Capacitance Coss - 154 - pF
Reverse Transfer Capacitance Crss - 8.4 - pF
Switching Characteristics
Turn-On Delay Time td(on) VDD=250V, ID=10A, RG=10 (Note 3, 4) - 26 - ns
Turn-On Rise Time tr - 20 - ns
Turn-Off Delay Time td(off) - 52 - ns
Turn-Off Fall Time tf - 21 - ns
Total Gate Charge Qg VDS=400V, ID=10A, VGS=10V (Note 3, 4) - 32 - nC
Gate-Source Charge Qgs - 7.9 - nC
Gate-Drain Charge Qgd - 12 - nC
Drain-Source Body Diode Characteristics and Maximum Ratings
Continuous Diode Forward Current IS - - 10 A
Pulsed Diode Forward Current ISM - - 40 A
Diode Forward Voltage VSD IS=10A, VGS=0V - - 1.5 V
Reverse Recovery Time trr VGS=0V, IS=10A, dIF/dt=100A/us (Note 4) - 411 - ns
Reverse Recovery Charge Qrr - 2.588 - uC

Package Outline Dimensions

TO-220TF

Dim Min Max
A .590(15.0) .650(16.5)
B .393(10.0) .414(10.5)
C .118(3.00) .138(3.50)
D .118(3.00) .146(3.70)
E .512(13.0) .551(14.0)
F .028(0.70) .035(0.90)
G .114(2.90) .138(3.50)
H .255(6.50) .280(7.10)
I .173(4.40) .197(5.00)
J .102(2.60) .110(2.80)
K .018(0.45) .026(0.65)
L .092(2.35) .109(2.75)
P .890(2.25) .113(2.85)

2410122028_Chongqing-Pingwei-Tech-10N50TF_C432586.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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