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Hefei Purple Horn E-Commerce Co., Ltd.

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China DIODES DMP21D6UFB4 7B 20V P Channel MOSFET with Fast Switching Speed and ESD
China DIODES DMP21D6UFB4 7B 20V P Channel MOSFET with Fast Switching Speed and ESD

  1. China DIODES DMP21D6UFB4 7B 20V P Channel MOSFET with Fast Switching Speed and ESD

DIODES DMP21D6UFB4 7B 20V P Channel MOSFET with Fast Switching Speed and ESD

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Drain to Source Voltage 20V
Current - Continuous Drain(Id) 810mA
Operating Temperature - -55℃~+150℃
RDS(on) 2Ω@1.8V
Gate Threshold Voltage (Vgs(th)) 1V@250uA
Type P-Channel
Reverse Transfer Capacitance (Crss@Vds) 4.9pF
Number 1 P-Channel
Output Capacitance(Coss) 7.2pF
Pd - Power Dissipation 980mW
Input Capacitance(Ciss) 46.1pF
Gate Charge(Qg) 800pC@8V
Description P-Channel 20V 0.81A 0.98W Surface Mount X2-DFN1006-3
Mfr. Part # DMP21D6UFB4-7B
Package X2-DFN1006-3
Model Number DMP21D6UFB4-7B

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  1. Product Details
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Product Specification

Drain to Source Voltage 20V Current - Continuous Drain(Id) 810mA
Operating Temperature - -55℃~+150℃ RDS(on) 2Ω@1.8V
Gate Threshold Voltage (Vgs(th)) 1V@250uA Type P-Channel
Reverse Transfer Capacitance (Crss@Vds) 4.9pF Number 1 P-Channel
Output Capacitance(Coss) 7.2pF Pd - Power Dissipation 980mW
Input Capacitance(Ciss) 46.1pF Gate Charge(Qg) 800pC@8V
Description P-Channel 20V 0.81A 0.98W Surface Mount X2-DFN1006-3 Mfr. Part # DMP21D6UFB4-7B
Package X2-DFN1006-3 Model Number DMP21D6UFB4-7B

Product Overview

The DMP21D6UFB4 is a 20V P-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. Its ultra-compact footprint of just 0.6mm and low profile of 0.4mm make it ideal for space-constrained and low-profile applications in portable electronics. The device features a low gate threshold voltage, fast switching speed, and ESD-protected gate.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Line: DMP21D6UFB4
  • Material: Molded Plastic, "Green" Molding Compound
  • Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: NiPdAu over Copper Leadframe, Solderable per MIL-STD-202, Method 208

Technical Specifications

Characteristic Symbol Value Unit Condition
Drain-Source Voltage BVDSS -20 V VGS = 0V, ID = -250A
Gate-Source Voltage VGSS 8 V
Continuous Drain Current ID -0.58 A VGS = -4.5V, TA = +25C (Note 5)
Continuous Drain Current ID -0.47 A VGS = -4.5V, TA = +70C (Note 5)
Continuous Drain Current ID -0.81 A VGS = -4.5V, TA = +25C (Note 6)
Maximum Body Diode Forward Current IS -0.8 A (Note 6)
Pulsed Drain Current IDM -5.0 A (10s Pulse, Duty Cycle = 1%)
Power Dissipation PD 0.51 W (Note 5)
Thermal Resistance, Junction to Ambient RJA 240 C/W (Note 5)
Power Dissipation PD 0.98 W (Note 6)
Thermal Resistance, Junction to Ambient RJA 128 C/W (Note 6)
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Zero Gate Voltage Drain Current IDSS A VDS = -20V, VGS = 0V, TJ = +25C
Gate-Source Leakage IGSS A VGS = 8V, VDS = 0V
Gate Threshold Voltage VGS(TH) -0.5 -1.0 V VDS = VGS, ID = -250A
Static Drain-Source On-Resistance RDS(ON) 0.67 1.0 VGS = -4.5V, ID = -100mA
Static Drain-Source On-Resistance RDS(ON) 0.85 1.5 VGS = -2.5V, ID = -80mA
Static Drain-Source On-Resistance RDS(ON) 1.0 2.0 VGS = -1.8V, ID = -40mA
Diode Forward Voltage VSD -1.0 -1.2 V VGS = 0V, IS = -300mA
Input Capacitance Ciss 46.1 pF VDS = -10V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 7.2 pF VDS = -10V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 4.9 pF VDS = -10V, VGS = 0V, f = 1.0MHz
Gate Resistance RG 350 VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge QG 0.5 nC VDS = -10V, ID = -250mA, VGS = -4.5V
Total Gate Charge QG 0.8 nC VDS = -10V, ID = -250mA, VGS = -8V
Gate-Source Charge QGS 0.1 nC VDS = -10V, ID = -250mA
Gate-Drain Charge QGD 0.1 nC VDS = -10V, ID = -250mA
Turn-On Delay Time tD(ON) 8.5 ns VDD = -3V, VGS = -2.5V, RL = 300, RG = 25, ID = -100mA
Turn-On Rise Time tR 4.3 ns VDD = -3V, VGS = -2.5V, RL = 300, RG = 25, ID = -100mA
Turn-Off Delay Time tD(OFF) 20.2 ns VDD = -3V, VGS = -2.5V, RL = 300, RG = 25, ID = -100mA
Turn-Off Fall Time tF 19.2 ns VDD = -3V, VGS = -2.5V, RL = 300, RG = 25, ID = -100mA
Case Dimensions (A) A 0.40 mm
Case Dimensions (A1) A1 0.00 0.05 0.03 mm
Case Dimensions (b) b 0.10 0.20 0.15 mm
Case Dimensions (b2) b2 0.45 0.55 0.50 mm
Case Dimensions (D) D 0.95 1.05 1.00 mm
Case Dimensions (E) E 0.55 0.65 0.60 mm
Case Dimensions (e) e 0.35 mm
Case Dimensions (L1) L1 0.20 0.30 0.25 mm
Case Dimensions (L2) L2 0.20 0.30 0.25 mm
Case Dimensions (L3) L3 0.40 mm
Case Dimensions (z) z 0.02 0.08 0.05 mm
Weight 0.001 grams (Approximate)
Part Number DMP21D6UFB4-7B
Marking 95
Reel Size 7 inches
Tape Width 8 mm
Tape Pitch 2 mm
Quantity per Reel 10,000

2412251050_DIODES-DMP21D6UFB4-7B_C3282099.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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