| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 810mA |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 2Ω@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 1V@250uA |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 4.9pF |
| Number | 1 P-Channel |
| Output Capacitance(Coss) | 7.2pF |
| Pd - Power Dissipation | 980mW |
| Input Capacitance(Ciss) | 46.1pF |
| Gate Charge(Qg) | 800pC@8V |
| Description | P-Channel 20V 0.81A 0.98W Surface Mount X2-DFN1006-3 |
| Mfr. Part # | DMP21D6UFB4-7B |
| Package | X2-DFN1006-3 |
| Model Number | DMP21D6UFB4-7B |
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Product Specification
| Drain to Source Voltage | 20V | Current - Continuous Drain(Id) | 810mA |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 2Ω@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 1V@250uA | Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 4.9pF | Number | 1 P-Channel |
| Output Capacitance(Coss) | 7.2pF | Pd - Power Dissipation | 980mW |
| Input Capacitance(Ciss) | 46.1pF | Gate Charge(Qg) | 800pC@8V |
| Description | P-Channel 20V 0.81A 0.98W Surface Mount X2-DFN1006-3 | Mfr. Part # | DMP21D6UFB4-7B |
| Package | X2-DFN1006-3 | Model Number | DMP21D6UFB4-7B |
The DMP21D6UFB4 is a 20V P-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. Its ultra-compact footprint of just 0.6mm and low profile of 0.4mm make it ideal for space-constrained and low-profile applications in portable electronics. The device features a low gate threshold voltage, fast switching speed, and ESD-protected gate.
| Characteristic | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | -20 | V | VGS = 0V, ID = -250A |
| Gate-Source Voltage | VGSS | 8 | V | |
| Continuous Drain Current | ID | -0.58 | A | VGS = -4.5V, TA = +25C (Note 5) |
| Continuous Drain Current | ID | -0.47 | A | VGS = -4.5V, TA = +70C (Note 5) |
| Continuous Drain Current | ID | -0.81 | A | VGS = -4.5V, TA = +25C (Note 6) |
| Maximum Body Diode Forward Current | IS | -0.8 | A | (Note 6) |
| Pulsed Drain Current | IDM | -5.0 | A | (10s Pulse, Duty Cycle = 1%) |
| Power Dissipation | PD | 0.51 | W | (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 240 | C/W | (Note 5) |
| Power Dissipation | PD | 0.98 | W | (Note 6) |
| Thermal Resistance, Junction to Ambient | RJA | 128 | C/W | (Note 6) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Zero Gate Voltage Drain Current | IDSS | A | VDS = -20V, VGS = 0V, TJ = +25C | |
| Gate-Source Leakage | IGSS | A | VGS = 8V, VDS = 0V | |
| Gate Threshold Voltage | VGS(TH) | -0.5 -1.0 | V | VDS = VGS, ID = -250A |
| Static Drain-Source On-Resistance | RDS(ON) | 0.67 1.0 | VGS = -4.5V, ID = -100mA | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.85 1.5 | VGS = -2.5V, ID = -80mA | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.0 2.0 | VGS = -1.8V, ID = -40mA | |
| Diode Forward Voltage | VSD | -1.0 -1.2 | V | VGS = 0V, IS = -300mA |
| Input Capacitance | Ciss | 46.1 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 7.2 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 4.9 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz |
| Gate Resistance | RG | 350 | VDS = 0V, VGS = 0V, f = 1MHz | |
| Total Gate Charge | QG | 0.5 | nC | VDS = -10V, ID = -250mA, VGS = -4.5V |
| Total Gate Charge | QG | 0.8 | nC | VDS = -10V, ID = -250mA, VGS = -8V |
| Gate-Source Charge | QGS | 0.1 | nC | VDS = -10V, ID = -250mA |
| Gate-Drain Charge | QGD | 0.1 | nC | VDS = -10V, ID = -250mA |
| Turn-On Delay Time | tD(ON) | 8.5 | ns | VDD = -3V, VGS = -2.5V, RL = 300, RG = 25, ID = -100mA |
| Turn-On Rise Time | tR | 4.3 | ns | VDD = -3V, VGS = -2.5V, RL = 300, RG = 25, ID = -100mA |
| Turn-Off Delay Time | tD(OFF) | 20.2 | ns | VDD = -3V, VGS = -2.5V, RL = 300, RG = 25, ID = -100mA |
| Turn-Off Fall Time | tF | 19.2 | ns | VDD = -3V, VGS = -2.5V, RL = 300, RG = 25, ID = -100mA |
| Case Dimensions (A) | A | 0.40 | mm | |
| Case Dimensions (A1) | A1 | 0.00 0.05 0.03 | mm | |
| Case Dimensions (b) | b | 0.10 0.20 0.15 | mm | |
| Case Dimensions (b2) | b2 | 0.45 0.55 0.50 | mm | |
| Case Dimensions (D) | D | 0.95 1.05 1.00 | mm | |
| Case Dimensions (E) | E | 0.55 0.65 0.60 | mm | |
| Case Dimensions (e) | e | 0.35 | mm | |
| Case Dimensions (L1) | L1 | 0.20 0.30 0.25 | mm | |
| Case Dimensions (L2) | L2 | 0.20 0.30 0.25 | mm | |
| Case Dimensions (L3) | L3 | 0.40 | mm | |
| Case Dimensions (z) | z | 0.02 0.08 0.05 | mm | |
| Weight | 0.001 | grams (Approximate) | ||
| Part Number | DMP21D6UFB4-7B | |||
| Marking | 95 | |||
| Reel Size | 7 inches | |||
| Tape Width | 8 mm | |||
| Tape Pitch | 2 mm | |||
| Quantity per Reel | 10,000 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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