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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Complementary Pair Enhancement Mode MOSFET Diodes DMG6601LVT-7 for Power
China Complementary Pair Enhancement Mode MOSFET Diodes DMG6601LVT-7 for Power

  1. China Complementary Pair Enhancement Mode MOSFET Diodes DMG6601LVT-7 for Power

Complementary Pair Enhancement Mode MOSFET Diodes DMG6601LVT-7 for Power

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Drain to Source Voltage 30V
Current - Continuous Drain(Id) 3.8A
Operating Temperature - -55℃~+150℃
RDS(on) 142mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) 1.5V@250uA
Type N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds) 43pF
Number 1 N-Channel + 1 P-Channel
Output Capacitance(Coss) 46pF
Input Capacitance(Ciss) 541pF
Pd - Power Dissipation 1.3W
Gate Charge(Qg) 13.8nC@10V
Description N-Channel+P-Channel Array 30V 3.8A 1.3W Surface Mount TSOT-26
Mfr. Part # DMG6601LVT-7
Package TSOT-26
Model Number DMG6601LVT-7

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 30V Current - Continuous Drain(Id) 3.8A
Operating Temperature - -55℃~+150℃ RDS(on) 142mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) 1.5V@250uA Type N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds) 43pF Number 1 N-Channel + 1 P-Channel
Output Capacitance(Coss) 46pF Input Capacitance(Ciss) 541pF
Pd - Power Dissipation 1.3W Gate Charge(Qg) 13.8nC@10V
Description N-Channel+P-Channel Array 30V 3.8A 1.3W Surface Mount TSOT-26 Mfr. Part # DMG6601LVT-7
Package TSOT-26 Model Number DMG6601LVT-7

Product Overview

The Diodes Incorporated DMG6601LVT is a complementary pair of enhancement mode MOSFETs designed for high efficiency power management applications. These MOSFETs minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal applications include backlighting, power management functions, and DC-DC converters.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: Complementary Pair Enhancement Mode MOSFET
  • Material: Molded Plastic, "Green" Molding Compound
  • Flammability Classification: UL 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Finish: NiPdAu over Copper Leadframe
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
  • Reliability: Qualified to AEC-Q101 Standards

Technical Specifications

Characteristic Q1 (N-Channel) Q2 (P-Channel) Unit Test Condition
Product Summary
V(BR)DSS 30V -30V
RDS(ON) max @ VGS = 10V 55m 110m TA = +25C
RDS(ON) max @ VGS = 4.5V 65m 142m TA = +25C
Package TSOT26
ID max @ TA = +25C 3.8A -2.5A
ID max @ TA = +25C 3.6A -2.1A (VGS = 4.5V for Q1, VGS = -4.5V for Q2)
Maximum Ratings
Drain-Source Voltage (VDSS) 30V -30V V
Gate-Source Voltage (VGSS) 12V V
Continuous Drain Current (ID) @ TA = +25C, VGS = 10V 3.8A -2.5A A Steady State
Continuous Drain Current (ID) @ TA = +70C, VGS = 10V 3.0A -2.0A A Steady State
Pulsed Drain Current (IDM) 20A -15A A t<10s
Thermal Characteristics
Total Power Dissipation (PD) @ TA = +25C 0.85W W Note 5
Total Power Dissipation (PD) @ TA = +70C 0.54W W Note 5
Thermal Resistance, Junction to Ambient (RJA) @ TA = +25C 147 C/W C/W Steady state, Note 5
Total Power Dissipation (PD) @ TA = +25C 1.3W W Note 6
Thermal Resistance, Junction to Ambient (RJA) @ TA = +25C 96 C/W C/W Steady state, Note 6
Operating and Storage Temperature Range (TJ, TSTG) -55 to +150 C C
Electrical Characteristics - Q1 (N-Channel)
Drain-Source Breakdown Voltage (BVDSS) 30 - V VGS = 0V, ID = 250A
Gate Threshold Voltage (VGS(th)) 0.5 1.5 V VDS = VGS, ID = 250A
Static Drain-Source On-Resistance (RDS (ON)) @ VGS = 10V, ID = 3.4A - 55 m TA = +25C
Static Drain-Source On-Resistance (RDS (ON)) @ VGS = 4.5V, ID = 3A - 65 m TA = +25C
Input Capacitance (Ciss) - 422 pF VDS = 15V, VGS = 0V, f = 1.0MHz
Electrical Characteristics - Q2 (P-Channel)
Drain-Source Breakdown Voltage (BVDSS) -30 - V VGS = 0V, ID = -250A
Gate Threshold Voltage (VGS(th)) -0.4 -1.2 V VDS = VGS, ID = -250A
Static Drain-Source On-Resistance (RDS (ON)) @ VGS = -10V, ID = -2.3A - 110 m TA = +25C
Static Drain-Source On-Resistance (RDS (ON)) @ VGS = -4.5V, ID = -2A - 142 m TA = +25C
Input Capacitance (Ciss) - 541 pF VDS = -15V, VGS = 0V, f = 1.0MHz
Mechanical Data
Case TSOT26
Weight 0.008 grams (approximate) grams
Ordering Information
Part Number Case Packaging
DMG6601LVT-7 TSOT26 3K/Tape & Reel Note 4

2409291808_DIODES-DMG6601LVT-7_C278728.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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