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Hefei Purple Horn E-Commerce Co., Ltd.

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China power switching device CBI BC1012 N Channel Enhancement Mode MOSFET with low
China power switching device CBI BC1012 N Channel Enhancement Mode MOSFET with low

  1. China power switching device CBI BC1012 N Channel Enhancement Mode MOSFET with low

power switching device CBI BC1012 N Channel Enhancement Mode MOSFET with low

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Drain to Source Voltage 20V
Current - Continuous Drain(Id) 630mA
Operating Temperature - -55℃~+150℃
RDS(on) 700mΩ@1.8V
Gate Threshold Voltage (Vgs(th)) 1V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 5.37pF
Output Capacitance(Coss) 9.68pF
Input Capacitance(Ciss) 60.67pF
Pd - Power Dissipation 280mW
Gate Charge(Qg) 798.6pC@4.5V
Description N-Channel 20V 0.63A 0.28W Surface Mount SOT-23
Mfr. Part # BC1012
Package SOT-23
Model Number BC1012

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  1. Product Details
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Product Specification

Drain to Source Voltage 20V Current - Continuous Drain(Id) 630mA
Operating Temperature - -55℃~+150℃ RDS(on) 700mΩ@1.8V
Gate Threshold Voltage (Vgs(th)) 1V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 5.37pF Output Capacitance(Coss) 9.68pF
Input Capacitance(Ciss) 60.67pF Pd - Power Dissipation 280mW
Gate Charge(Qg) 798.6pC@4.5V Description N-Channel 20V 0.63A 0.28W Surface Mount SOT-23
Mfr. Part # BC1012 Package SOT-23
Model Number BC1012

Product Overview

This N-Channel Enhancement Mode MOSFET is designed for efficient power switching applications. It features low on-resistance, low gate threshold voltage, and low input capacitance, contributing to fast switching speeds. The device also offers low input/output leakage and is ESD protected up to 2kV. It is Lead-Free and RoHS Compliant. Typical applications benefit from its robust performance characteristics and reliable operation.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Compliance: Lead Free By Design/RoHS Compliant
  • Protection: ESD Protected up to 2kV
  • Marking Code: NA1
  • Package: Plastic-Encapsulate MOSFETS, SOT-23

Technical Specifications

Characteristic Symbol Value Units Test Condition
Maximum Ratings @TA = 25C unless otherwise specified
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS ±6 V
Continuous Drain Current (Note 1) Steady State ID 0.63 (TA = 25°C) / 0.45 (TA = 85°C) A
Pulsed Drain Current IDM 6 A
Thermal Characteristics @TA = 25C unless otherwise specified
Total Power Dissipation (Note 1) PD 0.28 W
Thermal Resistance, Junction to Ambient RθJA 452 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current IDSS 100 (Max) nA VDS = 20V, VGS = 0V, TJ = 25°C
Gate-Source Leakage IGSS ±1.0 (Max) µA VGS = ±4.5V, VDS = 0V
Gate Threshold Voltage VGS(th) 0.5 - 1.0 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance RDS (ON) 0.3 - 0.4 Ω VGS = 4.5V, ID = 600mA
0.4 - 0.5 Ω VGS = 2.5V, ID = 500mA
0.5 - 0.7 Ω VGS = 1.8V, ID = 350mA
Forward Transfer Admittance |Yfs| 1.4 (Typ) S VDS = 10V, ID = 400mA
Diode Forward Voltage (Note 4) VSD 0.7 - 1.2 V VGS = 0V, IS = 150mA
Input Capacitance Ciss 60.67 (Typ) pF VDS =16V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 9.68 (Typ) pF VDS =16V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 5.37 (Typ) pF VDS =16V, VGS = 0V, f = 1.0MHz
Total Gate Charge Qg 736.6 (Typ) pC VGS =4.5V, VDS = 10V, ID =250mA
Gate-Source Charge Qgs 93.6 (Typ) pC VGS =4.5V, VDS = 10V, ID =250mA
Gate-Drain Charge Qgd 116.6 (Typ) pC VGS =4.5V, VDS = 10V, ID =250mA
Turn-On Delay Time tD(on) 5.1 (Typ) ns VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA
Turn-On Rise Time tr 7.4 (Typ) ns VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA
Turn-Off Delay Time tD(off) 26.7 (Typ) ns VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA
Turn-Off Fall Time tf 12.3 (Typ) ns VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA
Package Outline
Symbol Dimension Min Max Units
A 0.90 1.10 mm
A1 0.013 0.100 mm
B 1.80 2.00 mm
bp 0.35 0.50 mm
C 0.09 0.150 mm
D 2.80 3.00 mm
E 1.20 1.40 mm
HE 2.20 2.80 mm
Lp 0.20 0.50 mm
θ 0° 5°

2410010333_CBI-BC1012_C21714104.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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