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Hefei Purple Horn E-Commerce Co., Ltd.

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China High current power transistor CET Chino Excel Tech CEP6186 designed for power
China High current power transistor CET Chino Excel Tech CEP6186 designed for power

  1. China High current power transistor CET Chino Excel Tech CEP6186 designed for power

High current power transistor CET Chino Excel Tech CEP6186 designed for power

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Drain to Source Voltage 60V
Current - Continuous Drain(Id) 33A
Operating Temperature - -55℃~+175℃
RDS(on) 32mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)) 3V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 75pF
Number 1 N-channel
Input Capacitance(Ciss) 1.12nF
Output Capacitance(Coss) 125pF
Pd - Power Dissipation 43W
Gate Charge(Qg) 31nC@10V
Description N-Channel 60V 33A 43W Through Hole TO-220
Mfr. Part # CEP6186
Package TO-220
Model Number CEP6186

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 60V Current - Continuous Drain(Id) 33A
Operating Temperature - -55℃~+175℃ RDS(on) 32mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)) 3V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 75pF Number 1 N-channel
Input Capacitance(Ciss) 1.12nF Output Capacitance(Coss) 125pF
Pd - Power Dissipation 43W Gate Charge(Qg) 31nC@10V
Description N-Channel 60V 33A 43W Through Hole TO-220 Mfr. Part # CEP6186
Package TO-220 Model Number CEP6186

Product Overview

The CEP6186/CEB6186 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a super high dense cell design for extremely low RDS(ON) and high power and current handling capability. Available in TO-220 and TO-263 packages, this transistor is suitable for various industrial and electronic applications requiring efficient power switching.

Product Attributes

  • Brand: CET Semi
  • Product Series: CEP6186/CEB6186
  • Package Types: TO-220, TO-263 (DD-PAK)
  • Lead Free Product: Acquired

Technical Specifications

Parameter Symbol Limit Units Test Condition
FEATURES
Voltage VDS 60 V
Continuous Drain Current ID 33 A
RDS(ON) @ VGS = 10V RDS(ON) 25 m
RDS(ON) @ VGS = 4.5V RDS(ON) 32 m
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage VDS 60 V Tc = 25 C unless otherwise noted
Gate-Source Voltage VGS ±20 V Tc = 25 C unless otherwise noted
Drain Current-Continuous ID 33 A Tc = 25 C unless otherwise noted
Drain Current-Pulsed IDM 132 A Tc = 25 C unless otherwise noted
Maximum Power Dissipation @ TC = 25 C PD 0.28 W Tc = 25 C unless otherwise noted
Derate above 25 C 43 W/ C Tc = 25 C unless otherwise noted
Operating and Store Temperature Range TJ,Tstg -55 to 175 C
Thermal Characteristics
Thermal Resistance, Junction-to-Case RJC 62.5 C/W
Thermal Resistance, Junction-to-Ambient RJA 3.5 C/W
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60V, VGS = 0V
Gate Body Leakage Current, Forward IGSSF 100 nA VGS = 20V, VDS = 0V
Gate Body Leakage Current, Reverse IGSSR -100 nA VGS = -20V, VDS = 0V
Gate Threshold Voltage VGS(th) 3 V VGS = VDS, ID = 250µA
Static Drain-Source On-Resistance RDS(on) 25 m VGS = 10V, ID = 19A
Static Drain-Source On-Resistance RDS(on) 32 m VGS = 4.5V, ID = 10A
Input Capacitance Ciss 1120 pF VDS = 60V, ID = 19A, VGS = 10V, RGEN = 4.7Ω
Reverse Transfer Capacitance Crss 75 pF VDS = 48V, ID = 28A, VGS = 10V
Output Capacitance Coss 125 pF VDS = 25V, VGS = 0V, f = 1.0 MHz
Turn-On Delay Time td(on) 15 ns VDD = 30V, ID = 19A, VGS = 10V, RGEN = 4.7Ω
Turn-On Rise Time tr 38 ns VDD = 30V, ID = 19A, VGS = 10V, RGEN = 4.7Ω
Turn-Off Delay Time td(off) 30 ns VDD = 30V, ID = 19A, VGS = 10V, RGEN = 4.7Ω
Turn-Off Fall Time tf 24 ns VDD = 30V, ID = 19A, VGS = 10V, RGEN = 4.7Ω
Total Gate Charge Qg 76 nC VDS = 25V, VGS = 0V, f = 1.0 MHz
Gate-Source Charge Qgs 20 nC VDS = 25V, VGS = 0V, f = 1.0 MHz
Gate-Drain Charge Qgd 24 nC VDS = 25V, VGS = 0V, f = 1.0 MHz
Drain-Source Diode Forward Current IS 33 A VGS = 0V, IS = 33A
Drain-Source Diode Forward Voltage VSD 1.5 V VGS = 0V, IS = 33A

Notes:

  • a. Repetitive Rating: Pulse width limited by maximum junction temperature.
  • b. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%.
  • c. Guaranteed by design, not subject to production testing.

2411212320_CET-Chino-Excel-Tech-CEP6186_C154181.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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