| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 2.6Ω@10V,2A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF@25V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 425pF@25V |
| Pd - Power Dissipation | 34W |
| Gate Charge(Qg) | 14.5nC@325V |
| Description | 650V 4A 2.6Ω@10V,2A 4V 1 N-channel 34W TO-220TF-3 Single FETs, MOSFETs RoHS |
| Mfr. Part # | 4N65TF |
| Package | TO-220TF-3 |
| Model Number | 4N65TF |
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Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 2.6Ω@10V,2A |
| Gate Threshold Voltage (Vgs(th)) | 4V | Reverse Transfer Capacitance (Crss@Vds) | 5.8pF@25V |
| Number | 1 N-channel | Input Capacitance(Ciss) | 425pF@25V |
| Pd - Power Dissipation | 34W | Gate Charge(Qg) | 14.5nC@325V |
| Description | 650V 4A 2.6Ω@10V,2A 4V 1 N-channel 34W TO-220TF-3 Single FETs, MOSFETs RoHS | Mfr. Part # | 4N65TF |
| Package | TO-220TF-3 | Model Number | 4N65TF |
The 4N65TF is an N-channel MOSFET designed for efficient power switching applications. It offers a combination of high voltage capability (650V), a continuous drain current of 4A, and a low on-state resistance (RDS(ON) MAX=2.6@VGS=10V/2A). Key features include low gate charge, low Ciss, fast switching speeds, 100% avalanche testing, and improved dv/dt capability, making it suitable for various power electronics designs. This MOSFET is compliant with ROHS2.0 and REACH environmental standards.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| 4A,650V,RDS(ON)MAX=2.6@VGS=10V/2A | ||||||
| Low gate charge | ||||||
| Low Ciss | ||||||
| Fast switching | ||||||
| 100% avalanche tested | ||||||
| Improved dv/dt capability | ||||||
| Absolute Maximum Ratings (TC=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Gate-Source Voltage | VGSS | -30 | +30 | V | ||
| Continuous Drain Current | ID | 4 | A | |||
| Pulsed Drain Current (Note1) | IDM | 16 | A | |||
| Single Pulse Avalanche Energy (Note 2) | EAS | 150 | mJ | |||
| Reverse Diode dV/dt (Note 3) | dv/dt | 2.63 | V/ns | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | +150 | |||
| Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds | TL | 260 | ||||
| Mounting Torque 6-32 or M3 screw | 1.1 | Nm | ||||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Case | RthJC | 3.47 | /W | |||
| Maximum Power Dissipation TC=25 | PD | 34 | W | |||
| Electrical Characteristics (Tc=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250uA | 650 | - | - | V |
| Breakdown Temperature Coefficient | BVDSS /TJ | Reference to 25, ID=250uA | - | 0.67 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V | - | - | 10 | A |
| Gate-Body Leakage Current,Forward | IGSSF | VGS=30V,VDS=0V | - | - | 100 | nA |
| Gate-Body Leakage Current,Reverse | IGSSR | VGS=-30V,VDS=0V | - | - | -100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS=VGS,ID=250uA | 2 | - | 4 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V,ID=2A | - | 2.1 | 2.6 | |
| Pulse width tp380s,2% | ||||||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHZ | - | 425 | - | pF |
| Output Capacitance | Coss | - | 55 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 5.8 | - | pF | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=325V,ID=4A, RG=10 (Note3,4) | - | 10 | - | ns |
| Turn-On Rise Time | tr | - | 11 | - | ns | |
| Turn-Off Delay Time | td(off) | - | 31 | - | ns | |
| Turn-Off Fall Time | tf | - | 16 | - | ns | |
| Total Gate Charge | Qg | VDS=325V,ID=4A, VGS=10V(Note3,4) | - | 14.5 | - | nC |
| Gate-Source Charge | Qgs | - | 3 | - | nC | |
| Gate-Drain Charge | Qgd | - | 6 | - | nC | |
| Drain-Source Body Diode Characteristics and Maximum Ratings | ||||||
| Diode Forward Voltage | VSD | IS=4A,VGS=0V | - | - | 1.5 | V |
| Reverse Recovery Time | trr | VGS=0V,IS=4A,Tj=25 dIF/dt=100A/us(Note3) | - | 320 | - | ns |
| Reverse Recovery Charge | Qrr | Pulse width tp380s,2% | - | 2.0 | - | nC |
| Package Outline Dimensions | ||||||
| Package | Dim | Min | Max | |||
| TO-220TF | A | .590(15.0) | .650(16.5) | |||
| B | .393(10.0) | .414(10.5) | ||||
| C | .118(3.00) | .138(3.50) | ||||
| D | .118(3.00) | .146(3.70) | ||||
| E | .512(13.0) | .551(14.0) | ||||
| F | .028(0.70) | .035(0.90) | ||||
| G | .114(2.90) | .138(3.50) | ||||
| H | .255(6.50) | .280(7.10) | ||||
| I | .173(4.40) | .197(5.00) | ||||
| J | .102(2.60) | .110(2.80) | ||||
| K | .018(0.45) | .026(0.65) | ||||
| L | .092(2.35) | .109(2.75) | ||||
| P | .890(2.25) | .113(2.85) | ||||
Notes:
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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