Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 34mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | - |
| Input Capacitance(Ciss) | - |
| Pd - Power Dissipation | 2W |
| Gate Charge(Qg) | 21nC@10V |
| Description | N-Channel+P-Channel Array 30V 9A 2W Surface Mount SOP-8 |
| Mfr. Part # | CEM3139 |
| Package | SOP-8 |
| Model Number | CEM3139 |
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Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 34mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA | Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - | Number | - |
| Input Capacitance(Ciss) | - | Pd - Power Dissipation | 2W |
| Gate Charge(Qg) | 21nC@10V | Description | N-Channel+P-Channel Array 30V 9A 2W Surface Mount SOP-8 |
| Mfr. Part # | CEM3139 | Package | SOP-8 |
| Model Number | CEM3139 |
The CEM3139 is a Dual Enhancement Mode Field Effect Transistor featuring both N-Channel and P-Channel configurations. It is designed with a super high dense cell structure for extremely low RDS(ON) and offers high power and current handling capabilities. This surface mount device is RoHS compliant and suitable for various electronic applications requiring efficient switching and power management.
| Parameter | Symbol | N-Channel Units | N-Channel Min | N-Channel Typ | N-Channel Max | P-Channel Units | P-Channel Min | P-Channel Typ | P-Channel Max |
|---|---|---|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) | |||||||||
| Drain-Source Voltage | VDS | V | 20 | V | -30 | ||||
| Gate-Source Voltage | VGS | V | 12 | V | 12 | ||||
| Drain Current-Continuous | ID | A | 9 | A | -6 | ||||
| Drain Current-Pulsed | IDM | A | 36 | A | -24 | ||||
| Maximum Power Dissipation | PD | W | 2.0 | W | 2.0 | ||||
| Operating and Store Temperature Range | TJ, Tstg | C | -55 | 150 | C | -55 | 150 | ||
| Thermal Characteristics | |||||||||
| Thermal Resistance, Junction-to-Ambient | RJA | C/W | 62.5 | C/W | 62.5 | ||||
| N-Channel Electrical Characteristics (TA = 25C unless otherwise noted) | |||||||||
| Drain-Source Breakdown Voltage | BVDSS | V | 20 | ||||||
| Zero Gate Voltage Drain Current | IDSS | A | -100 | ||||||
| Gate Body Leakage Current, Forward | IGSSR | nA | 100 | ||||||
| Gate Body Leakage Current, Reverse | IGSSF | nA | |||||||
| Gate Threshold Voltage | VGS(th) | V | 2.0 | V | -1.0 | ||||
| Static Drain-Source On-Resistance | RDS(on) | m | 16 | m | 34 | ||||
| Input Capacitance | Ciss | pF | 980 | pF | 1015 | ||||
| Reverse Transfer Capacitance | Crss | pF | 165 | pF | 140 | ||||
| Output Capacitance | Coss | pF | 205 | pF | 210 | ||||
| Turn-On Delay Time | td(on) | ns | 15 | ns | 13 | ||||
| Turn-On Rise Time | tr | ns | 10 | ns | 5 | ||||
| Turn-Off Delay Time | td(off) | ns | 44 | ns | 45 | ||||
| Turn-Off Fall Time | tf | ns | 9 | ns | 7 | ||||
| Total Gate Charge | Qg | nC | 13 | nC | 21 | ||||
| Gate-Source Charge | Qgs | nC | 4 | nC | 5.2 | ||||
| Gate-Drain Charge | Qgd | nC | 2 | nC | 2.2 | ||||
| Drain-Source Diode Forward Current | IS | A | 1 | A | -2 | ||||
| Drain-Source Diode Forward Voltage | VSD | V | 1.1 | V | -1.2 | ||||
| P-Channel Electrical Characteristics (TA = 25C unless otherwise noted) | |||||||||
| Drain-Source Breakdown Voltage | BVDSS | V | -30 | ||||||
| Zero Gate Voltage Drain Current | IDSS | A | -100 | ||||||
| Gate Body Leakage Current, Forward | IGSSR | nA | 100 | ||||||
| Gate Body Leakage Current, Reverse | IGSSF | nA | |||||||
| Gate Threshold Voltage | VGS(th) | V | -1.0 | ||||||
| Static Drain-Source On-Resistance | RDS(on) | m | 34 | ||||||
| Input Capacitance | Ciss | pF | |||||||
| Reverse Transfer Capacitance | Crss | pF | |||||||
| Output Capacitance | Coss | pF | |||||||
| Turn-On Delay Time | td(on) | ns | |||||||
| Turn-On Rise Time | tr | ns | |||||||
| Turn-Off Delay Time | td(off) | ns | |||||||
| Turn-Off Fall Time | tf | ns | |||||||
| Total Gate Charge | Qg | nC | |||||||
| Gate-Source Charge | Qgs | nC | |||||||
| Gate-Drain Charge | Qgd | nC | |||||||
| Drain-Source Diode Forward Current | IS | A | |||||||
| Drain-Source Diode Forward Voltage | VSD | V | |||||||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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