| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 80A |
| RDS(on) | 9mΩ@10V |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Output Capacitance(Coss) | 600pF |
| Input Capacitance(Ciss) | 3.5nF |
| Pd - Power Dissipation | 110W |
| Gate Charge(Qg) | 56nC@10V |
| Description | 60V 80A 110W Surface Mount TO-252-2L |
| Mfr. Part # | SUD50P06-15-GE3-CN |
| Package | TO-252-2L |
| Model Number | SUD50P06-15-GE3-CN |
View Detail Information
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Product Specification
| Drain to Source Voltage | 60V | Current - Continuous Drain(Id) | 80A |
| RDS(on) | 9mΩ@10V | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V@250uA | Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Output Capacitance(Coss) | 600pF | Input Capacitance(Ciss) | 3.5nF |
| Pd - Power Dissipation | 110W | Gate Charge(Qg) | 56nC@10V |
| Description | 60V 80A 110W Surface Mount TO-252-2L | Mfr. Part # | SUD50P06-15-GE3-CN |
| Package | TO-252-2L | Model Number | SUD50P06-15-GE3-CN |
This N-channel MOSFET is designed for high-performance applications, offering a maximum drain-source voltage of -60V and a continuous drain current of up to -80A at 25. It features a low static drain-source on-resistance of less than 11m at VGS=-10V, with a typical value of 9m. Key applications include lithium battery protection, wireless charging, and mobile phone fast charging. The device is housed in a TO-252-2L package, suitable for surface-mounted designs.
Absolute Maximum Ratings (TC=25 unless otherwise noted)
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | -60 | V |
| VGS | Gate-Source Voltage | 20 | V |
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V1 | -80 | A |
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V1 | -50 | A |
| IDM | Pulsed Drain Current2 | -320 | A |
| EAS | Single Pulse Avalanche Energy3 | 450 | mJ |
| IAS | Avalanche Current | 41 | A |
| PD@TC=25 | Total Power Dissipation4 | 110 | W |
| TSTG | Storage Temperature Range | -55 to 150 | |
| TJ | Operating Junction Temperature Range | -55 to 150 | |
| RJA | Thermal Resistance Junction-Ambient1 | 1.1 | /W |
| RJC | Thermal Resistance Junction-Case1 | 60 | /W |
General Features
Electrical Characteristics (TC=25 unless otherwise noted)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | -68 | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25, ID=-1mA | --- | -0.035 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-20A | --- | 9.0 | 12 | m |
| VGS=-4.5V , ID=-15A | --- | 12 | 16 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.8 | -2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 4.28 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=-60V , VGS=0V , TJ =25 | --- | --- | 1 | uA |
| VDS=-60V , VGS=0V , TJ =55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=-5V , ID=-20A | --- | 50 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 2.0 | --- | |
| Qg | Total Gate Charge (-4.5V) | VDS=-30V , VGS=-10V , ID=-20A | --- | 56 | --- | nC |
| Qgs | Gate-Source Charge | --- | 11 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 9 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=-30V , VGS=-10V , RG=3, ID=-20A | --- | 4.5 | --- | ns |
| Tr | Rise Time | --- | 2.5 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 14.5 | --- | ns | |
| Tf | Fall Time | --- | 3.8 | --- | ns | |
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 3500 | --- | pF |
| Coss | Output Capacitance | --- | 600 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 25 | --- | pF | |
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | -80 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | -240 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
Notes:
Package Information: TO-252-2L
| SYMBOL | MILLIMETER | MIN | TYP | MAX |
|---|---|---|---|---|
| A | 2.200 | 2.300 | 2.400 | |
| A1 | 0.000 | 0.127 | ||
| b | 0.640 | 0.690 | 0.740 | |
| D | 6.500 | 6.600 | 6.700 | |
| D1 | 5.334 REF | |||
| D2 | 6.000 | 6.100 | 6.200 | |
| D3 | 4.826 REF | |||
| E | 9.900 | 10.100 | 10.300 | |
| e | 3.166 REF | |||
| e7 | <3 | |||
| h | 2.286 TYP | |||
| L | 1.400 | 1.550 | 1.700 | |
| L1 | 0.600 | 0.800 | 1.000 | |
| L2 | 1.100 | 1.200 | 1.300 | |
| L3 | 2.888 REF | |||
| L4 | 1.600 REF |
Disclaimer: The information presented in this document is for reference only. ChipNobo reserves the right to adjust product indicators and upgrade technical parameters for product optimization and productivity improvement. ChipNobo is exempt from liability for any delays or non-delivery of information disclosure.
Usage Advisory: The product is designed for residential and commercial equipment and does not support sensitive items or specialized equipment in areas with sanctions. ChipNobo Co., Ltd assumes no responsibility or liability for any damages resulting from improper use.
For additional information, please visit www.chipnobo.com or consult your nearest Chipnobo sales office.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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