Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 50mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 76pF |
| Input Capacitance(Ciss) | 665pF |
| Pd - Power Dissipation | 2W |
| Gate Charge(Qg) | 10.5nC@10V |
| Description | N-Channel 60V 4.5A 2W Surface Mount SOP-8 |
| Mfr. Part # | BRCS4828SC |
| Package | SOP-8 |
| Model Number | BRCS4828SC |
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Product Specification
| Drain to Source Voltage | 60V | Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 50mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | Number | 1 N-channel |
| Output Capacitance(Coss) | 76pF | Input Capacitance(Ciss) | 665pF |
| Pd - Power Dissipation | 2W | Gate Charge(Qg) | 10.5nC@10V |
| Description | N-Channel 60V 4.5A 2W Surface Mount SOP-8 | Mfr. Part # | BRCS4828SC |
| Package | SOP-8 | Model Number | BRCS4828SC |
The BRCS4828SC is an N-Channel Enhancement Double Mode Field Effect Transistor designed for use in a SOP-8 plastic package. Manufactured using advanced trench technology, it offers excellent RDS(ON) characteristics and very low gate charge. This device is suitable for applications such as load switches and Pulse Width Modulation (PWM). It features a Drain-Source Voltage (VDS) of 60V and a continuous drain current (ID) of 4.5A at VGS = 10V, with a low on-resistance of less than 50m at VGS = 10V.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Ta=25C) | IDA,F | 4.5 | A | |||
| Continuous Drain Current (Ta=70C) | IDA,F | 3.6 | A | |||
| Pulsed Drain Current | IDMB | 20 | A | |||
| Power Dissipation for Single Operation (Ta=25) | PDA | 2 | W | |||
| Power Dissipation for Single Operation (Ta=70) | PDA | 1.28 | W | |||
| Avalanche Current | IARB | 19 | A | |||
| Repetitive avalanche energy | EARB | 18 | mJ | |||
| Junction and Storage Temperature Range | Tj, Tstg | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Ambient (t 10s) | RJAA | 48 | 62.5 | /W | ||
| Maximum Junction-to-Ambient (Steady-State) | RJAA | 74 | 110 | /W | ||
| Maximum Junction-to-Case (Steady-State) | RJC | 35 | 60 | /W | ||
| Electrical Characteristics (Ta=25) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=250A, VGS=0V | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current (TJ=55C) | IDSS | VDS=60V, VGS=0V | 5 | A | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.0 | 1.6 | 3.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=4.5A | 45 | 50 | m | |
| Static Drain-Source On-Resistance (TJ=125C) | RDS(ON) | VGS=10V, ID=4.5A | 79 | 100 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=3A | 55 | 65 | m | |
| Forward Transconductance | gFS | VDS=5V, ID=4.5A | 8.0 | S | ||
| Diode Forward Voltage | VSD | IS=1A, VGS=0V | 0.74 | 1 | V | |
| Maximum Body-Diode Continuous Current | IS | 3 | A | |||
| Pulsed Body Diode Current | ISMB | 20 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VGS=0V, f=1MHz | 665 | pF | ||
| Output Capacitance | Coss | VGS=0V, f=1MHz | 76 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, f=1MHz | 20 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 2.2 | |||
| Switching Parameters | ||||||
| Total Gate Charge (10V) | Qg(10V) | VGS=10V, VDS=30V, ID=4.5A | 8.5 | 10.5 | nC | |
| Total Gate Charge (4.5V) | Qg(4.5V) | VGS=4.5V, VDS=30V, ID=3A | 4.3 | 5.5 | nC | |
| Gate-Source Charge | Qgs | VGS=10V, VDS=30V, ID=4.5A | 1.6 | nC | ||
| Gate-Drain Charge | Qgd | VGS=10V, VDS=30V, ID=4.5A | 2.2 | nC | ||
| Turn-on Delay Time | td(ON) | VGS=10V, VDS=30V, RL=6.7, RGEN=3 | 4.7 | ns | ||
| Turn-on Rise Time | tr | VGS=10V, VDS=30V, RL=6.7, RGEN=3 | 2.3 | ns | ||
| Turn-off Delay Time | td(OFF) | VGS=10V, VDS=30V, RL=6.7, RGEN=3 | 15.7 | ns | ||
| Turn-off Fall Time | tf | VGS=10V, VDS=30V, RL=6.7, RGEN=3 | 1.9 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=4.5A, dI/dt=100A/ms | 27.5 | 35 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF=4.5A, dI/dt=100A/ms | 32 | nC | ||
Note: Refer to the datasheet for detailed explanations of symbols, test conditions, and abbreviations like A, B, C, D, E, F.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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