Hefei Purple Horn E-Commerce Co., Ltd.
| Description | TO-252-2 Single FETs, MOSFETs RoHS |
| Mfr. Part # | BMI5N50 |
| Package | TO-252-2 |
| Model Number | BMI5N50 |
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Product Specification
| Description | TO-252-2 Single FETs, MOSFETs RoHS | Mfr. Part # | BMI5N50 |
| Package | TO-252-2 | Model Number | BMI5N50 |
The BMI5N50 is an N-Channel MOSFET designed for efficient power switching applications. It features a high drain-source breakdown voltage of 500V and a continuous drain current rating of 5A, with a maximum on-resistance of 1.6 at VGS=10V. This MOSFET offers fast switching capabilities and low gate charge, contributing to improved system efficiency. It is manufactured with lead-free and green molding compound materials, complying with the EU RoHS directive. The device is packaged in a TO-252-2 (DPAK) package, suitable for various industrial and electronic power management systems.
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain - Source Voltage | VDS | (TC=25C unless otherwise specified) | - | - | 500 | V |
| Gate - Source Voltage | VGS | (TC=25C unless otherwise specified) | - | - | ±30 | V |
| Continuous Drain Current | ID | (TC=25C unless otherwise specified) | - | - | 5 | A |
| Pulsed Drain Current | IDM | (1) | - | - | 20 | A |
| Single Pulsed Avalanche Energy | EAS | (2) | - | - | 250 | mJ |
| Power Dissipation | PD | (TC=25C unless otherwise specified) | - | - | 54 | W |
| Junction and Storage Temperature Range | TJ, Tstg | (TC=25C unless otherwise specified) | -55 | - | +150 | C |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID=250uA | 500 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 500V, VGS=0V | - | - | 1 | uA |
| Gate-Body Leakage Current | IGSS | VGS = ±30V, VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID=250uA | 2.0 | - | 4.0 | V |
| Static Drain-Source On Resistance | RDS(ON) | VGS=10V, ID=2.5A | - | 1.4 | 1.6 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =25V, VGS =0V, f = 1MHz | - | 554 | - | pF |
| Output Capacitance | Coss | VDS =25V, VGS =0V, f = 1MHz | - | 65 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS =25V, VGS =0V, f = 1MHz | - | 8 | - | pF |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=30V, ID=0.5A, RG =25 | - | 30 | - | ns |
| Turn-On Rise Time | Tr | VDD=30V, ID=0.5A, RG =25 | - | 50 | - | ns |
| Turn-Off Delay Time | Td(off) | VDD=30V, ID=0.5A, RG =25 | - | 140 | - | ns |
| Turn-Off Fall Time | Tf | VDD=30V, ID=0.5A, RG =25 | - | 70 | - | ns |
| Total Gate Charge | Qg | VDS=400V, VGS=10V, ID=5A | - | 17 | - | nC |
| Gate-Source Charge | Qgs | VDS=400V, VGS=10V, ID=5A | - | 3 | - | nC |
| Gate-Drain Charge | Qgd | VDS=400V, VGS=10V, ID=5A | - | 8 | - | nC |
| Source-Drain Diode Characteristics | ||||||
| Continuous Diode Forward Current | IS | - | - | - | 5 | A |
| Pulsed Diode Forward Current | ISM | - | - | - | 20 | A |
| Diode Forward Voltage | VSD | VGS=0V, IS=1A | - | - | 1 | V |
Notes:
(1) Repetitive Rating: pulse width limited by maximum junction temperature.
(2) L=10mH, IAS=7.1A, VDD=50V, RG=2.4, Starting TJ=25C.
Pulsed Test: pulse width 300us, duty cycle 2%. Essentially independent of operating temperature.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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