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Hefei Purple Horn E-Commerce Co., Ltd.

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China 20V Complementary Enhancement Mode MOSFET BORN BM4608B Featuring N Channel and P
China 20V Complementary Enhancement Mode MOSFET BORN BM4608B Featuring N Channel and P

  1. China 20V Complementary Enhancement Mode MOSFET BORN BM4608B Featuring N Channel and P

20V Complementary Enhancement Mode MOSFET BORN BM4608B Featuring N Channel and P

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Drain to Source Voltage 20V
Current - Continuous Drain(Id) 3.8A;4.2A
RDS(on) 32mΩ@10V;30mΩ@10V
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 1V@250uA
Type N-Channel + P-Channel
Pd - Power Dissipation 1.25W
Gate Charge(Qg) 16nC@6V;42nC@6V
Description N-Channel+P-Channel 20V 4.2A 1.25W Surface Mount SOT-23-6L
Mfr. Part # BM4608B
Package SOT-23-6L
Model Number BM4608B

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  1. Product Details
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Product Specification

Drain to Source Voltage 20V Current - Continuous Drain(Id) 3.8A;4.2A
RDS(on) 32mΩ@10V;30mΩ@10V Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 1V@250uA Type N-Channel + P-Channel
Pd - Power Dissipation 1.25W Gate Charge(Qg) 16nC@6V;42nC@6V
Description N-Channel+P-Channel 20V 4.2A 1.25W Surface Mount SOT-23-6L Mfr. Part # BM4608B
Package SOT-23-6L Model Number BM4608B

Product Overview

The BM4608B is a 20V complementary enhancement-mode MOSFET from BORN SEMICONDUCTOR, INC. It features low gate charge and is suitable for use in PWM applications and as a load switch. This device offers both N-Channel and P-Channel MOSFETs in a single package, providing complementary functionality.

Product Attributes

  • Brand: BORN SEMICONDUCTOR, INC.
  • Model: BM4608B
  • Type: Complementary Enhancement-Mode MOSFET
  • Package: SOT23-6L
  • Marking: 4608B
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified

Technical Specifications

General Features:

Feature N-Channel P-Channel
VDS 20V -20V
RDS(ON) @VGS=10V (MAX) 42m 42m
RDS(ON) @VGS=4.5V (MAX) 45m 45m

Absolute Maximum Ratings (@TA=25C unless otherwise noted):

Symbol Parameter N-Channel Value P-Channel Value Units
VDS Drain-Source Voltage 20 -20 V
VGS Gate-Source Voltage 12 12 V
ID Continuous Drain Current (TA = 25C) 3.8 -4.2 A
ID Continuous Drain Current (TA = 75C) 2.3 -2.5 A
IDM Pulsed Drain Current(1) 10 -12 A
PD Maximum Power Dissipation (TA = 25C) 1.25 1.25 W
PD Maximum Power Dissipation (TA = 75C) 0.75 0.75 W
TJ,Tstg Operating junction and storage temperature range -55 to +150 C

Thermal Characteristics:

Symbol Parameter N-Channel Max. Units P-Channel Max. Units
RJA Junction-to-Ambient (t10s) 100 C/W 100 C/W
RJA Junction-to-Ambient (Steady-State) 130 C/W 130 C/W
RJL Junction-to-Lead (Steady-State) 90 C/W 90 C/W

N-Channel Electrical Characteristics (@TA=25C unless otherwise noted):

Symbol Parameter Test Condition Min. Typ. Max. Unit
OFF Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 20 V
IDSS Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V 1 uA
IGSS Gate Body Leakage Current VGS = 12V, VDS = 0V 100 nA
ON Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 0.4 1.0 V
RDS(on) Drain-Source On-State Resistance VGS = 10V, ID = 3A 32 42 m
RDS(on) Drain-Source On-State Resistance VGS = 4.5V, ID = 2.5A 35 45 m
Dynamic Characteristics
Ciss Input Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz 750 pF
Coss Output Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz 100 pF
Crss Reverse Transfer Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz 73 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 10V, ID = 3A, VGS = 6V, RGEN = 3 15 ns
tr Turn-On Rise Time VDD = 10V, ID = 3A, VGS = 6V, RGEN = 3 6 ns
td(off) Turn-Off Delay Time VDD = 10V, ID = 3A, VGS = 6V, RGEN = 3 26 ns
tf Turn-Off Fall Time VDD = 10V, ID = 3A, VGS = 6V, RGEN = 3 12 ns
Qg Total Gate Charge VDS = 10V, ID = 3A, VGS = 6V 16 nC
Qgs Gate-Source Charge VDS = 10V, ID = 3A, VGS = 6V 2.8 nC
Qgd Gate-Drain Charge VDS = 10V, ID = 3A, VGS = 6V 4.1 nC
Drain-Source Diode Characteristics
VSD Diode Forward Voltage IS = 1A, VGS = 0V 1.2 V
IS Maximum Diode Continuous Current IS = 1A, VGS = 0V 2.0 A

P-Channel Electrical Characteristics (@TA=25C unless otherwise noted):

Symbol Parameter Test Condition Min. Typ. Max. Unit
OFF Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250uA -20 V
IDSS Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V -1 uA
IGSS Gate Body Leakage Current VGS = 12V, VDS = 0V 100 nA
ON Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250uA -0.4 -1.0 V
RDS(on) Drain-Source On-State Resistance VGS = -10V, ID = -3A 30 42 m
RDS(on) Drain-Source On-State Resistance VGS = -4.5V, ID = -2.5A 32 45 m
Dynamic Characteristics
Ciss Input Capacitance VDS = -10V, VGS = 0V, f = 1.0MHz 1022 pF
Coss Output Capacitance VDS = -10V, VGS = 0V, f = 1.0MHz 152 pF
Crss Reverse Transfer Capacitance VDS = -10V, VGS = 0V, f = 1.0MHz 164 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = -10V, ID = -3A, VGS = -6V, RGEN = 6 16 ns
tr Turn-On Rise Time VDD = -10V, ID = -3A, VGS = -6V, RGEN = 6 6.8 ns
td(off) Turn-Off Delay Time VDD = -10V, ID = -3A, VGS = -6V, RGEN = 6 32 ns
tf Turn-Off Fall Time VDD = -10V, ID = -3A, VGS = -6V, RGEN = 6 12 ns
Qg Total Gate Charge VDS = -10V, ID = -3A, VGS = -6V 42 nC
Qgs Gate-Source Charge VDS = -10V, ID = -3A, VGS = -6V 7 nC
Qgd Gate-Drain Charge VDS = -10V, ID = -3A, VGS = -6V 9 nC
Drain-Source Diode Characteristics
VSD Diode Forward Voltage IS = -1A, VGS = 0V -1.2 V
IS Maximum Diode Continuous Current IS = -1A, VGS = 0V -2.0 A

Ordering Information:

Order Code Package Marking Base Qty Delivery Mode
BM4608B SOT23-6L 4608B 3K Tape and reel

Package Outline Drawing - SOT23-6L:

SYMBOL MILLIMETER MIN MILLIMETER MAX INCHES MIN INCHES MAX
A 1.050 1.250 0.041 0.049
A1 0.000 0.100 0.000 0.004
A2 1.050 1.150 0.041 0.045
b 0.300 0.500 0.012 0.020
C 0.100 0.200 0.004 0.008
D 2.820 3.020 0.111 0.119
E1 1.500 1.700 0.059 0.067
E 2.650 2.950 0.104 0.116
e 0.950(BSC) 0.037(BSC)
e1 1.800 2.000 0.071 0.079
L 0.300 0.600 0.012 0.024
0 8 0 8

Packaging Tape - SOT23-6L:

SYMBOL MILLIMETER
A0 3.250.1
B0 3.30.1
d0 1.550.1
d1 1.00.1
E 1.750.1
F 3.500.1
K0 1.380.1
P 4.000.1
P0 4.000.1
P1 2.000.1
W 8.000.2
T 0.20.02

Packaging Reel:

SYMBOL MILLIMETER
A 177.80.2
B 2.70.2
C 13.50.2
D 9.60.3
E 54.50.2
F 12.30.3
T1 1.00.2
Quantity 3000PCS

Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.


2505301710_BORN-BM4608B_C49009909.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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