| Description | TO-220AB Single FETs, MOSFETs RoHS |
| Mfr. Part # | BME10N65 |
| Package | TO-220AB |
| Model Number | BME10N65 |
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Product Specification
| Description | TO-220AB Single FETs, MOSFETs RoHS | Mfr. Part # | BME10N65 |
| Package | TO-220AB | Model Number | BME10N65 |
The BMx10N65 is a high-performance N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Designed for power switch circuits in adaptors and chargers, this MOSFET boasts a VDSS of 650V and an ID of 10A. It offers fast switching speeds and a low gate charge, with a typical RDS(ON) of 0.79 at VGS=10V. The device is constructed with molded plastic meeting UL Flammability Classification Rating 94V-0 and is compliant with the EU RoHS 2011/65/EU directive.
| Model | Package | VDSS (V) | ID (A) | RDS(ON) @VGS=10V (, Typ) | Base Quantity | Delivery Mode |
|---|---|---|---|---|---|---|
| BMx10N65 | TO-220AB | 650 | 10 | 0.79 | 50pcs/tube | 1kpcs/box, 5kpcs/carton |
| BMx10N65 | TO-220F | 650 | 10 | 0.79 | 50pcs/tube | 1kpcs/box, 5kpcs/carton |
| BMx10N65 | TO-263 | 650 | 10 | 0.79 | 50pcs/tube | 1kpcs/box, 5kpcs/carton |
| BMx10N65-R | TO-263 | 650 | 10 | 0.79 | 800pcs/reel | 800pcs/box, 4kpcs/carton |
| Symbol | Parameters | Conditions | Value (TO-220AB/TO-263) | Value (TO-220F) | Unit |
|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | @TA=25C unless otherwise noted | 650 | 650 | V |
| VGS | Gate-Source Voltage | @TA=25C unless otherwise noted | 30 | 30 | V |
| ID | Continue Drain Current | @TA=25C unless otherwise noted | 10 | 10 | A |
| IDM | Pulsed Drain Current (Note 1) | @TA=25C unless otherwise noted | 40 | 40 | A |
| PD | Power Dissipation | @TA=25C unless otherwise noted | 150 | 31 | W |
| EAS | Single Pulse Avalanche Energy (Note 1) | @TA=25C unless otherwise noted | 845 | 845 | mJ |
| TJ | Junction Temperature Range | @TA=25C unless otherwise noted | 150 | 150 | C |
| TSTG | Storage Temperature Range | @TA=25C unless otherwise noted | -55 to +150 | -55 to +150 | C |
| RJC | Thermal Resistance, Junction to Case | @TA=25C unless otherwise noted | 0.83 | 4 | C/W |
| RJA | Thermal Resistance, Junction to Ambient | @TA=25C unless otherwise noted | 62.5 | 62.5 | C/W |
| Symbol | Parameters | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID=250uA | 650 | 690 | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS=0V | 1 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = 30V, VDS=0V | 100 | nA | ||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, ID=250uA | 2 | 4 | V | |
| RDS(on) | Static Drain-source On Resistance | VGS=10V, ID=5A | 0.79 | 0.9 | ||
| gfs | Forward Transconductance | VDS=40V, ID=5A | 11 | S | ||
| Ciss | Input capacitance | VDS = 25V, VGS =0V, f = 1MHz | 1720 | pF | ||
| Coss | Output capacitance | VDS = 25V, VGS =0V, f = 1MHz | 140 | pF | ||
| Crss | Reverse transfer capacitance | VDS = 25V, VGS =0V, f = 1MHz | 11 | pF | ||
| td(on) | Turn-on delay time (Note 1) | VDD=325V, ID =10A, RG =25 | 23 | ns | ||
| tr | Turn-on Rise time (Note 1) | VDD=325V, ID =10A, RG =25 | 15 | ns | ||
| td(off) | Turn-Off Delay Time (Note 1) | VDD=325V, ID =10A, RG =25 | 90 | ns | ||
| tf | Turn-Off Fall time (Note 1) | VDD=325V, ID =10A, RG =25 | 30 | ns | ||
| Qgs | Gate to Source Charge (Note 1) | VDD=520V, VGS=10V, ID=10A | 5 | nC | ||
| Qgd | Gate to Drain Charge (Note 1) | VDD=520V, VGS=10V, ID=10A | 16 | nC | ||
| Qg | Total Gate Charge (Note 1) | VDD=520V, VGS=10V, ID=10A | 32 | nC | ||
| VSD | Diode Forward Voltage | ISD=10A | 1.1 | V | ||
| IS | Diode Forward Current | ISD=10A | 10 | A | ||
| ISM | Diode Pulsed Current | ISD=10A | 40 | A | ||
| trr | Reverse Recovery Time (Note 1) | ISD =10A, VGS=0V, dIF/dt=100A/s | 310 | ns | ||
| Qrr | Reverse Recovery Charge (Note 1) | ISD =10A, VGS=0V, dIF/dt=100A/s | 4.1 | C |
Note 1: Pulse test: 300 s pulse width, 2% duty cycle.
Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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