Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 650V |
| Configuration | - |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | - |
| RDS(on) | 1.45Ω@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5.3pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 92pF |
| Input Capacitance(Ciss) | 1.13nF |
| Pd - Power Dissipation | 36W |
| Gate Charge(Qg) | 23nC@10V |
| Description | 650V 7A 1.45Ω@10V 4V@250uA 1 N-channel 36W TO-220F Single FETs, MOSFETs RoHS |
| Mfr. Part # | BMF7N65G |
| Package | TO-220F |
| Model Number | BMF7N65G |
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Product Specification
| Drain to Source Voltage | 650V | Configuration | - |
| Current - Continuous Drain(Id) | 7A | Operating Temperature - | - |
| RDS(on) | 1.45Ω@10V | Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | N-Channel | Reverse Transfer Capacitance (Crss@Vds) | 5.3pF |
| Number | 1 N-channel | Output Capacitance(Coss) | 92pF |
| Input Capacitance(Ciss) | 1.13nF | Pd - Power Dissipation | 36W |
| Gate Charge(Qg) | 23nC@10V | Description | 650V 7A 1.45Ω@10V 4V@250uA 1 N-channel 36W TO-220F Single FETs, MOSFETs RoHS |
| Mfr. Part # | BMF7N65G | Package | TO-220F |
| Model Number | BMF7N65G |
The BMx7N65 is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. designed for power switch circuits in adaptors and chargers. It features a high drain-source voltage (VDSS) of 650V and a continuous drain current (ID) of 7A. The MOSFET offers fast switching speeds and low gate charge, making it suitable for efficient power applications. Specifications are subject to change; please refer to http://www.born-tw.com for the most current information.
| Model/Part Number | Package | VDSS (V) | ID (A) | RDS(ON) @VGS=10V (, TYP) | Power Dissipation (W) | Ordering Information (Base Qty) |
|---|---|---|---|---|---|---|
| BMx7N65 | TO-220AB | 650 | 7 | 1.21 | 100 | BME7N65/G (50pcs/tube) |
| BMx7N65 | TO-220F | 650 | 7 | 1.21 | 36 | BMF7N65/G (50pcs/tube) |
| BMx7N65 | TO-263 | 650 | 7 | 1.21 | 108 | BMK7N65/G (50pcs/tube) |
| BMx7N65 | TO-263 (Reel) | 650 | 7 | 1.21 | 108 | BMK7N65-R/G (800pcs/reel) |
| BMx7N65 | TO-252 | 650 | 7 | 1.21 | 108 | BMI7N65/G (2500pcs/reel) |
| Symbol | Parameters | Conditions | Value (TYP) | Unit | TO-220AB/TO-263 | TO-220F | TO-252 |
|---|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | @TA=25C | 650 | V– | – | – | |
| VGS | Gate-Source Voltage | @TA=25C | 30 | V– | – | – | |
| ID | Continue Drain Current | @TA=25C | 7 | A– | – | – | |
| IDM | Pulsed Drain Current (Note1) | @TA=25C | 28 | A– | – | – | |
| PD | Power Dissipation | @TA=25C | 100 / 36 / 108 | W100 | 36 | 108 | |
| EAS | Single Pulse Avalanche Energy (Note1) | @TA=25C | 350 | mJ– | – | – | |
| TJ | Junction Temperature Range | 150 | C | – | – | – | |
| TSTG | Storage Temperature Range | -55 to +150 | C | – | – | – | |
| RJC | Thermal Resistance, Junction to Case | 1.25 / 3.46 / 1.16 | C/W | 1.25 | 3.46 | 1.16 | |
| RJA | Thermal Resistance, Junction to Ambient | 62.5 / 62.5 / 100 | C/W | 62.5 | 62.5 | 100 | |
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID=250uA | 650 | V– | – | – | |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS=0V | 1 | A | – | – | – |
| IGSS | Gate- Source Leakage Current | VGS = 30V, VDS=0V | 100 | nA– | – | – | |
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, ID=250uA | 2 | V– | – | – | |
| RDS(on) | Static Drain-source On Resistance | VGS=10V, ID=3.5A | 1.21 | – | – | – | |
| gfs | Forward Transconductance | VDS=15V, ID=7A | 6.5 | S | – | – | – |
| Ciss | Input capacitance | VDS = 25V, VGS =0V, f = 1MHz | 1130 | pF– | – | – | |
| Coss | Output capacitance | VDS = 25V, VGS =0V, f = 1MHz | 92 | pF– | – | – | |
| Crss | Reverse transfer capacitance | VDS = 25V, VGS =0V, f = 1MHz | 5.3 | pF– | – | – | |
| Td(on) | Turn-on delay time (Note1) | VDD=325V, ID =7A, RG =10 | 18 | ns | – | – | – |
| Tr | Turn-on Rise time (Note1) | VDD=325V, ID =7A, RG =10 | 19 | ns | – | – | – |
| Td(off) | Turn -Off Delay Time (Note1) | VDD=325V, ID =7A, RG =10 | 39 | ns | – | – | – |
| Tf | Turn -Off Fall time (Note1) | VDD=325V, ID =7A, RG =10 | 18 | ns | – | – | – |
| Qgs | Gate to Source Charge (Note1) | VDD=520V, VGS=10V, ID=7A | 5 | nC– | – | – | |
| Qgd | Gate to Drain Charge (Note1) | VDD=520V, VGS=10V, ID=7A | 9 | nC– | – | – | |
| Qg | Total Gate Charge (Note1) | VDD=520V, VGS=10V, ID=7A | 23 | nC– | – | – | |
| VSD | Diode Forward Voltage | ISD=7A | 1.4 | V– | – | – | |
| IS | Diode Forward Current | 7 | A– | – | – | ||
| ISM | Diode Pulsed Current | 28 | A– | – | – | ||
| Trr | Reverse Recovery Time (Note1) | ISD =7A, VGS=0V, dIF/dt=100A/s | 420 | ns | – | – | – |
| Qrr | Reverse Recovery Charge (Note1) | ISD =7A, VGS=0V, dIF/dt=100A/s | 1.9 | C | – | – | – |
Note1: Pulse test: 300 s pulse width, 2% duty cycle.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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