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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
  • Verified Supplier
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China 100V N channel MOSFET BORN BMO10N380 with low gate resistance and 100 percent
China 100V N channel MOSFET BORN BMO10N380 with low gate resistance and 100 percent

  1. China 100V N channel MOSFET BORN BMO10N380 with low gate resistance and 100 percent

100V N channel MOSFET BORN BMO10N380 with low gate resistance and 100 percent

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Description PDFN-8(5x6) Single FETs, MOSFETs RoHS
Mfr. Part # BMO10N380
Package PDFN-8(5x6)
Model Number BMO10N380

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  1. Product Details
  2. Company Details

Product Specification

Description PDFN-8(5x6) Single FETs, MOSFETs RoHS Mfr. Part # BMO10N380
Package PDFN-8(5x6) Model Number BMO10N380

Product Overview

The BMO10N380 is a 100V N-channel MOSFET designed for power switching applications, motor control, and UPS systems. It features fast switching, low RDS(on), low gate charge, low gate resistance, and is 100% UIS tested. This MOSFET is available in a PDFN5*6 package.

Product Attributes

  • Brand: BMO
  • Product Type: N-channel MOSFET
  • Package: PDFN5*6
  • Marking: T043N10N
  • Delivery Mode: Tape and reel
  • Base Quantity: 5K

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Absolute Maximum Ratings (TA=25 unless otherwise specified)
Drain-Source Voltage VDS 100 V
Gate - Source Voltage VGS 20 V
Drain Current ID TC=25 113 A
Drain Current ID TC=100 71 A
Drain Current-Pulse IDM 450 A
Single Pulse Avalanche Energy EAS 578 mJ
Power Dissipation PD TC=25 104 W
Junction Temperature(Max) TJ 150
Storage Temperature Tstg -55 to +150
Thermal Resistance from Junction to Case RJC 1.2 /W
Thermal Resistance, Junction to Ambient RJA 44 /W
Electrical Characteristics (TA=25 unless otherwise noted)
Gate Threshold Voltage VGS(TH) VGS = VDS , IDS=250uA 2 3 4 V
Static Drain-source On Resistance RDS(on) VGS=10V, ID=20A 3.5 4.3 m
Forward Transconductance gFS VDS=5V, ID=10A 48 S
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID=250uA 100 V
Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS=0V 1 uA
Gate- Source Leakage Current IGSS VGS = 20V, VDS=0V 100 nA
Diode Forward Voltage VSD VGS=0V,IS=2A 1.2 V
Reverse Recovery Time trr IF =20A, di/dt=100A/us 65 nS
Reverse Recovery Charge Qrr 138 nC
Input capacitance Ciss VDS =50V, VGS =0V, f = 1MHz 3055 pF
Output capacitance Coss 1378 pF
Reverse transfer capacitance Crss 19 pF
Gate Resistance Rg VGS = VDS=0V,f = 1MHz 1.6
Dynamic Characteristics
Turn-on delay time Td(on) VDD=50V, VGS=10V, ID =20A, RG =3 9.3 nS
Turn-on Rise time Tr 15
Turn -Off Delay Time Td(off) 29
Turn-Off Fall time Tf 19
Gate to Source Charge Qgs VDS=50V, VGS=10V, ID=20A 9.3 nC
Gate to Drain Charge Qg 44
Gate to Drain Charge Qgd 8.4

2511241925_BORN-BMO10N380_C52993701.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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