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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China N Channel Enhancement Mode MOSFET BORN SI2328 Featuring High Density Cell Design
China N Channel Enhancement Mode MOSFET BORN SI2328 Featuring High Density Cell Design

  1. China N Channel Enhancement Mode MOSFET BORN SI2328 Featuring High Density Cell Design

N Channel Enhancement Mode MOSFET BORN SI2328 Featuring High Density Cell Design

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Drain to Source Voltage 100V
Current - Continuous Drain(Id) 1.5A
Operating Temperature - -55℃~+150℃
RDS(on) 270mΩ@10V
Gate Threshold Voltage (Vgs(th)) 3V@250uA
Number 1 N-channel
Output Capacitance(Coss) 38pF
Input Capacitance(Ciss) 326pF
Pd - Power Dissipation 1.25W
Description N-Channel 100V 1.5A 1250mW Surface Mount SOT-23
Mfr. Part # SI2328
Package SOT-23
Model Number SI2328

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  1. Product Details
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Product Specification

Drain to Source Voltage 100V Current - Continuous Drain(Id) 1.5A
Operating Temperature - -55℃~+150℃ RDS(on) 270mΩ@10V
Gate Threshold Voltage (Vgs(th)) 3V@250uA Number 1 N-channel
Output Capacitance(Coss) 38pF Input Capacitance(Ciss) 326pF
Pd - Power Dissipation 1.25W Description N-Channel 100V 1.5A 1250mW Surface Mount SOT-23
Mfr. Part # SI2328 Package SOT-23
Model Number SI2328

Product Overview

The SI2328 is an N-Channel Enhancement-Mode MOSFET featuring advanced trench process technology and high-density cell design for ultra-low on-resistance. This MOSFET is suitable for various applications requiring efficient power management. It is available in a SOT-23 package.

Product Attributes

  • Technology: Advanced trench process
  • Cell Design: High Density Cell Design
  • Type: N-Channel Enhancement-Mode MOSFET
  • Package: SOT-23
  • Compliance: ROHS

Technical Specifications

Characteristic Symbol Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage BVDSS 100 V
Gate-Source Voltage VGS +20 V
Drain Current (continuous) ID 1.5 A
Drain Current (pulsed) IDM 6 A
Total Device Dissipation (TA=25) PD 1250 mW
Junction Temperature TJ 150
Storage Temperature Tstg -55 +150
Electrical Characteristics
Drain-Source Breakdown Voltage (ID = -250uA,VGS=0V) BVDSS 100 V
Gate Threshold Voltage (ID = -250uA,VGS= VDS) VGS(th) 1 3 V
Diode Forward Voltage Drop (IS= 1 A,VGS=0V) VSD 1.2 V
Zero Gate Voltage Drain Current (VGS=0V, VDS= 30V) IDSS 1 uA
Gate Body Leakage (VGS=+20V, VDS=0V) IGSS +100 nA
Static Drain-Source On-State Resistance (ID= 1.5A,VGS= 10 V) RDS(ON) 230 270 m
Static Drain-Source On-State Resistance (ID= 1 A,VGS= 4.5 V) RDS(ON) 275 340 m
Input Capacitance (VGS=10V, VDS= 15 V,f=1MHz) CISS 326 pF
Output Capacitance (VGS=10V, VDS= 15 V,f=1MHz) COSS 38 pF
Turn-ON Time (VDS= 50 V, ID= 10 A, RGEN=6) t(on) 10 ns
Turn-OFF Time (VDS= 50 V, ID= 10 A, RGEN=6) t(off) 30 ns

Package Outline: SOT-23 (UNIT)mm


2410010103_BORN-SI2328_C344007.pdf

Company Details

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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