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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China N Channel Power MOSFET BORN BMF18N50G 500 Volt 18 Ampere for Adaptors and
China N Channel Power MOSFET BORN BMF18N50G 500 Volt 18 Ampere for Adaptors and

  1. China N Channel Power MOSFET BORN BMF18N50G 500 Volt 18 Ampere for Adaptors and

N Channel Power MOSFET BORN BMF18N50G 500 Volt 18 Ampere for Adaptors and

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Configuration -
Drain to Source Voltage 500V
Current - Continuous Drain(Id) 18A
Operating Temperature - -
RDS(on) 280mΩ@10V
Gate Threshold Voltage (Vgs(th)) 4V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) -
Number 1 N-channel
Pd - Power Dissipation 45W
Input Capacitance(Ciss) 3.045nF@25V
Gate Charge(Qg) 50.5nC@10V
Description N-Channel 500V 18A 45W Through Hole TO-220F
Mfr. Part # BMF18N50G
Package TO-220F
Model Number BMF18N50G

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  1. Product Details
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Product Specification

Configuration - Drain to Source Voltage 500V
Current - Continuous Drain(Id) 18A Operating Temperature - -
RDS(on) 280mΩ@10V Gate Threshold Voltage (Vgs(th)) 4V@250uA
Type N-Channel Reverse Transfer Capacitance (Crss@Vds) -
Number 1 N-channel Pd - Power Dissipation 45W
Input Capacitance(Ciss) 3.045nF@25V Gate Charge(Qg) 50.5nC@10V
Description N-Channel 500V 18A 45W Through Hole TO-220F Mfr. Part # BMF18N50G
Package TO-220F Model Number BMF18N50G

Product Overview

The BMx18N50 is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. designed for power switch circuits in adaptors and chargers. It features a high Drain-Source Voltage (VDSS) of 500V and a continuous Drain Current (ID) of 18A. The MOSFET offers fast switching speeds and low gate charge, with a typical On-Resistance (RDS(ON)) of 0.24 at VGS=10V. The product is compliant with EU RoHS 2011/65/EU directive and is constructed with molded plastic meeting UL Flammability Classification Rating 94V-0.

Product Attributes

  • Brand: BORN SEMICONDUCTOR, INC.
  • Product Line: BMx18N50
  • Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
  • Compliance: EU RoHS 2011/65/EU directive
  • Lead Status: Lead free
  • Solder Bath Temperature: 265C maximum, 10s per JESD 22-B106
  • Mounting Position: Any
  • Note on 'G' Suffix: Indicates use of a thick frame.

Technical Specifications

Symbol Parameters Conditions Value Unit TO-220AB/TO-263 TO-220F
Features
VDSS Drain-Source Voltage 500 V
ID Continuous Drain Current 18 A
RDS(ON) Static Drain-source On Resistance VGS=10V, TYP 0.24
VGS=10V, ID=9A 0.24 0.28
Fast Switching
Low Gate Charge
Applications
Power switch circuit of adaptor and charger
Maximum Ratings (@TA=25C unless otherwise noted)
VDS Drain-Source Voltage 500 V ✔ ✔
VGS Gate-Source Voltage 30 V ✔ ✔
ID Continue Drain Current 18 A ✔ ✔
IDM Pulsed Drain Current (Note1) 64 A ✔ ✔
PD Power Dissipation 232 W ✔ 45
EAS Single Pulse Avalanche Energy (Note1) 810 mJ ✔ ✔
TJ Junction Temperature Range 150 C ✔ ✔
TSTG Storage Temperature Range -55 to +150 C ✔ ✔
RJC Thermal Resistance, Junction to Case 0.54 C/W ✔ 3.3
RJA Thermal Resistance, Junction to Ambient 62.5 C/W ✔ 62.5
Electrical Characteristics (TA=25C unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID=250uA 500 V
IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS=0V 1 A
IGSS Gate-Source Leakage Current VGS = 30V, VDS=0V 100 nA
VGS(TH) Gate Threshold Voltage VGS = VDS, ID=250uA 2 4 V
RDS(on) Static Drain-source On Resistance VGS=10V, ID=9A 0.24 0.28
gfs Forward Transconductance VDS=15V, ID=8A 15 S
Ciss Input capacitance VDS = 25V, VGS =0V, f = 1MHz 3045 pF
Coss Output capacitance 284 pF
Crss Reverse transfer capacitance 12 pF
Td(on) Turn-on delay time (Note1) VDD=250V, ID =18A, RG =10 17.5 ns
Tr Turn-on Rise time (Note1) 42 ns
Td(off) Turn-Off Delay Time (Note1) 101 ns
Tf Turn-Off Fall time (Note1) 15.5 ns
Qgs Gate to Source Charge (Note1) VDD=400V, VGS=10V, ID=20A 12.7 nC
Qgd Gate to Drain Charge (Note1) 15.8 nC
Qg Total Gate Charge (Note1) 50.5 nC
VSD Diode Forward Voltage ISD=18A 1.3 V
IS Diode Forward Current 18 A
ISM Diode Pulsed Current 64 A
Trr Reverse Recovery Time (Note1) ISD =50A, VGS=0V, dIF/dt=100A/s 382 ns
Qrr Reverse Recovery Charge (Note1) 2.7 C
Ordering Information
Order Code Package Base Qty Delivery Mode
BME18N50/G TO-220AB 50pcs/tube 1kpcs/box, 5kpcs/carton
BMF18N50/G TO-220F 50pcs/tube 1kpcs/box, 5kpcs/carton
BMK18N50/G TO-263 50pcs/tube 1kpcs/box, 5kpcs/carton
BMK18N50-R/G TO-263 800pcs/reel 800pcs/box, 4kpcs/carton

Note1: Pulse test: 300 s pulse width, 2% duty cycle.

Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.


2412021443_BORN-BMF18N50G_C42402388.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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