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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China 20V Dual N Channel Enhancement MOSFET BORN BM8205 Low On Resistance for Power
China 20V Dual N Channel Enhancement MOSFET BORN BM8205 Low On Resistance for Power

  1. China 20V Dual N Channel Enhancement MOSFET BORN BM8205 Low On Resistance for Power

20V Dual N Channel Enhancement MOSFET BORN BM8205 Low On Resistance for Power

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Drain to Source Voltage 20V
Current - Continuous Drain(Id) 4A
Operating Temperature - -55℃~+150℃
RDS(on) 35mΩ@2.5V
Gate Threshold Voltage (Vgs(th)) 1.2V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 140pF
Number 2 N-Channel
Output Capacitance(Coss) 330pF
Input Capacitance(Ciss) 600pF
Pd - Power Dissipation 1.4W
Gate Charge(Qg) 11nC@4.5V
Description N-Channel Array 20V 4A 1.4W Surface Mount SOT-23-6L
Mfr. Part # BM8205
Package SOT-23-6L
Model Number BM8205

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 20V Current - Continuous Drain(Id) 4A
Operating Temperature - -55℃~+150℃ RDS(on) 35mΩ@2.5V
Gate Threshold Voltage (Vgs(th)) 1.2V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 140pF Number 2 N-Channel
Output Capacitance(Coss) 330pF Input Capacitance(Ciss) 600pF
Pd - Power Dissipation 1.4W Gate Charge(Qg) 11nC@4.5V
Description N-Channel Array 20V 4A 1.4W Surface Mount SOT-23-6L Mfr. Part # BM8205
Package SOT-23-6L Model Number BM8205

Product Overview

The BM8205 is a 20V Dual N-Channel Enhancement MOSFET designed for power switching applications. It features very low on-resistance (RDS(ON)) due to its high-density cell design, making it suitable for PWM applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is characterized by its fully characterized avalanche voltage and current and comes in a SOT23-6L surface mount package.

Product Attributes

  • Brand: BM
  • Model: BM8205
  • Package Type: SOT23-6L
  • Channel Type: Dual N-Channel Enhancement MOSFET
  • Origin: Taiwan (indicated by www.born-tw.com)

Technical Specifications

Parameter Symbol Condition Min Typ Max Unit
Absolute Maximum Ratings @TA=25 unless otherwise noted
Drain-source voltage VDS 20 V
Gate-source voltage VGS 12 V
Continuous drain current (TJ = 150 C) a ID TA=25C 4.0 A
Continuous drain current (TJ = 150 C) a ID TA=70C 3.0 A
Pulsed drain current b IDM 20 A
Continuous source current (diode conduction) a IS 1.2 A
Power dissipation a PD TA=25C 1.4 W
Power dissipation a PD TA=70C 0.9 W
Operating junction and storage temperature range TJ, Tstg -55 150
N-Channel Electrical Characteristics @TA=25 unless otherwise noted
Drain-source breakdown voltage BVDSS VGS=0V, ID=250A 20 - - V
Zero gate voltage drain current IDSS VDS=20V, VGS=0V - - 1 A
Gate-body leakage IGSS VDS=0V, VGS=12V - - 100 nA
Gate threshold voltage VGS(th) VDS=VGS, ID=250A 0.5 0.75 1.2 V
Drain-source on-state resistance a RDS(ON) VGS=4.5V, ID=4.0A - 22 26 m
Drain-source on-state resistance a RDS(ON) VGS=2.5V, ID=3.0A - 28 35 m
Forward transconductance a gfs VDS=5V, ID=4A - 10 - S
Dynamic Characteristics b
Input capacitance CISS VDS=10V ,VGS=0V f=1.0MHz - 600 - pF
Output capacitance COSS - 330 - pF
Reverse transfer capacitance CRSS - 140 - pF
Switching Characteristics
Turn-on delay time tD(ON) VDD=10V RL=3 ohm VGEN=4.5V RGEN=6ohm - 18 - ns
Rise time tr - 5 - ns
Turn-off delay time tD(OFF) - 43 - ns
Fall time tf - 20 - ns
Total gate charge Qg VDS=10V ID=4A VGS=4.5V - 11 - nC
Gate-source charge Qgs - 2.3 - nC
Gate-drain charge Qg - 2.5 - nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode forward voltage VSD VGS=0V,Is=2A - 0.76 1.16 V
THERMAL CHARACTERISTICS
Maximum junction-to-ambient a RJA 10 s Steady-State 70 - 90 /W
Maximum junction-to-ambient a RJA 100 Steady-State 100 - 125 /W
Maximum junction-to-foot Steady-State RJC 63 - 80 /W

Ordering Information

Order Code Package Base Qty Delivery Mode Marking
BM8205 SOT23-6L 3K Tape and reel 8205

2410121930_BORN-BM8205_C20612283.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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