Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 4.2A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 120mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.3V@250uA |
| Type | P-Channel |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 957pF@15V |
| Pd - Power Dissipation | 1.4W |
| Gate Charge(Qg) | 9.4nC@4.5V |
| Description | P-Channel 30V 4.2A 1.4W Surface Mount SOT-23-3 |
| Mfr. Part # | BRCS3401MCQ |
| Package | SOT-23-3 |
| Model Number | BRCS3401MCQ |
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Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 4.2A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 120mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.3V@250uA | Type | P-Channel |
| Number | 1 P-Channel | Input Capacitance(Ciss) | 957pF@15V |
| Pd - Power Dissipation | 1.4W | Gate Charge(Qg) | 9.4nC@4.5V |
| Description | P-Channel 30V 4.2A 1.4W Surface Mount SOT-23-3 | Mfr. Part # | BRCS3401MCQ |
| Package | SOT-23-3 | Model Number | BRCS3401MCQ |
The BRCS3401MCQ is a P-Channel MOSFET in a SOT23-3 plastic package, designed for high reliability and automotive applications. It meets AEC-Q101 standards and is a halogen-free product. This device is suitable for use as a load switch or in Pulse Width Modulation (PWM) applications, fulfilling the stringent requirements of automotive environments. Key electrical characteristics include a VDS of -30V, ID of -4.2A at VGS = -10V, and low on-state resistance (RDS(ON)) of less than 60m at VGS = -10V.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Drain Current Continuous | ID | -4.2 | A | |||
| Drain Current- Continuous (Ta=70) | ID(Ta=70) | -3.5 | A | |||
| Pulsed Drain Current | IDM | -30 | A | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Total Power Dissipation | PD | A | 1.4 | W | ||
| Total Power Dissipation (Ta=70) | PD(Ta=70) | A | 1.0 | W | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | |||
| Maximum Junction-to-Ambient | RJA | (Ta=70) A | 125 | /W | ||
| Maximum Junction-to-Lead | RJL | C | 60 | /W | ||
| Electrical Characteristics (Ta=25) | ||||||
| DrainSource Breakdown Voltage | BVDSS | VGS=0V, ID=-250A B | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V, VGS=0V | -1 | A | ||
| Zero Gate Voltage Drain Current (TJ=55) | IDSS | VDS=-24V, VGS=0V | -5 | A | ||
| GateBody Leakage | IGSS | VGS=12V, VDS=0V | 0.1 | A | ||
| OnState Drain Current | ID(on) | VGS=-4.5V, VDS=-5V | -25 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.7 | -1 | -1.3 | V |
| Static DrainSource OnResistance | RDS(on)(1) | VGS=-10V, ID=-4.2A | 52 | 60 | m | |
| Static DrainSource OnResistance | RDS(on)(2) | VGS=-10V, ID=-4.2A, TJ=125 | 75 | m | ||
| Static DrainSource OnResistance | RDS(on)(3) | VGS=-4.5V, ID=-4A | 60 | 65 | m | |
| Static DrainSource OnResistance | RDS(on)(4) | VGS=-2.5V, ID=-1A | 75 | 120 | m | |
| Forward Transconductance | gFS | VDS=-5V, ID=-5A | 4 | 8 | S | |
| DrainSource Diode Forward Voltage | VSD | VGS=0V, IS=-1A | -0.75 | -1.0 | V | |
| Electrical Characteristics (Ta=25) | ||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 957 | pF | ||
| Output Capacitance | Coss | VDS=-15V, VGS=0V, f=1MHz | 115 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, f=1MHz | 77 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 6 | |||
| Total Gate Charge | Qg | VGS=-4.5V, VDS=-15V, ID=-4A | 9.4 | nC | ||
| Gate Source Charge | Qgs | VGS=-4.5V, VDS=-15V, ID=-4A | 2 | nC | ||
| Gate Drain Charge | Qg d | VGS=-4.5V, VDS=-15V, ID=-4A | 3 | nC | ||
| TurnOn Delay Time | td(on) | VGS=-10V, RL=3.6, VDS=-15V, RGEN=6 | 6.3 | ns | ||
| TurnOn Rise Time | tr | VGS=-10V, RL=3.6, VDS=-15V, RGEN=6 | 3.2 | ns | ||
| TurnOff Delay Time | td(off) | VGS=-10V, RL=3.6, VDS=-15V, RGEN=6 | 38.2 | ns | ||
| TurnOff Fall Time | tf | VGS=-10V, RL=3.6, VDS=-15V, RGEN=6 | 12 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=-4A, dI/dt=100A/s | 20.2 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=-4A, dI/dt=100A/s | 11.2 | nC | ||
Notes on Ratings:
A: RJA measured with device mounted on 1in FR-4 board with 2oz. Copper, in still air at TA=25C. Application-specific values depend on user's board design. Current rating based on t 10s thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature.
C: RJA is the sum of junction-to-lead (RJL) and lead-to-ambient thermal impedance.
D: Static characteristics (Figures 1-6, 12, 14) obtained using 80s pulses, duty cycle 0.5% max.
E: Tests performed with device mounted on 1in FR-4 board with 2oz. Copper, in still air at TA=25C. SOA curve is a single pulse rating.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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