Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 15A |
| RDS(on) | 12mΩ@10V |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 237pF |
| Output Capacitance(Coss) | 310pF |
| Input Capacitance(Ciss) | 2.215nF |
| Pd - Power Dissipation | 1.5W |
| Gate Charge(Qg) | 20nC@4.5V |
| Description | P-Channel 30V 15A 1.5W Surface Mount SOP-8 |
| Mfr. Part # | MSQ30P15 |
| Package | SOP-8 |
| Model Number | MSQ30P15 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 15A |
| RDS(on) | 12mΩ@10V | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA | Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 237pF | Output Capacitance(Coss) | 310pF |
| Input Capacitance(Ciss) | 2.215nF | Pd - Power Dissipation | 1.5W |
| Gate Charge(Qg) | 20nC@4.5V | Description | P-Channel 30V 15A 1.5W Surface Mount SOP-8 |
| Mfr. Part # | MSQ30P15 | Package | SOP-8 |
| Model Number | MSQ30P15 |
The MSQ30P15 is a high-performance trench P-channel MOSFET designed with extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key applications include MB, VGA, Vcore, POL applications, load switches, and LED applications.
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | ±20 | V | ||
| ID | Continuous Drain Current (TC =25°C) | -15 | A | |||
| ID | Continuous Drain Current (TC =70°C) | -12 | A | |||
| IDM | Pulsed Drain Current1,2 | -45 | A | |||
| ID | Continuous Drain Current (TA =25°C) | -9.0 | A | |||
| ID | Continuous Drain Current (TA =70°C) | -7.2 | A | |||
| IAS | Single Pulse Avalanche Current, L =0.1mH3 | -46 | A | |||
| EAS | Single Pulse Avalanche Energy, L =0.1mH3 | 105 | mJ | |||
| PD | Power Dissipation4 (TA =25°C) | 1.5 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient1 | 85 | °C/W | |||
| RθJC | Maximum Junction-to-Case1 | 30 | °C/W | |||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =-250µA | -1.0 | -2.5 | V | |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =-250µA | -30 | V | ||
| gfs | Forward Transconductance | VDS =-5V, ID =-10A | 24 | S | ||
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | ±100 | nA | ||
| IDSS | Drain-Source Leakage Current | VDS =-24V, VGS =0V, TJ =25°C | -1 | µA | ||
| IDSS | Drain-Source Leakage Current | VDS =-24V, VGS =0V, TJ =55°C | -5 | µA | ||
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =-10V, ID =-12A | 12 | mΩ | ||
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =-4.5V, ID =-8A | 20 | mΩ | ||
| EAS | Single Pulse Avalanche Energy5 | VDD =-25V, L =0.1mH, IAS =-33A | 54 | mJ | ||
| VSD | Diode Forward Voltage2 | IS =-12A, VGS =0V, TJ =25°C | -1.2 | V | ||
| IS | Continuous Source Current1,6 | -15 | A | |||
| ISM | Pulsed Source Current2,6 | VG =VD =0V, Force Current | -45 | A | ||
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge2 | VDS =-15V, ID =-10A, VGS =-4.5V | 20 | nC | ||
| Qgs | Gate-Source Charge | 5.1 | nC | |||
| Qgd | Gate-Drain Charge | 7.3 | nC | |||
| td(on) | Turn-On Delay Time2 | 33.8 | ns | |||
| tr | Rise Time | 35.8 | ns | |||
| td(off) | Turn-Off Delay Time | 72.8 | ns | |||
| tf | Fall Time | VDS =-15V, ID =-1A, VGS =-10V, RG =3.3Ω | 10.5 | ns | ||
| CISS | Input Capacitance | VDS =-15V, VGS =0V, f =1.0MHz | 2215 | pF | ||
| COSS | Output Capacitance | 310 | pF | |||
| CRSS | Reverse Transfer Capacitance | 237 | pF | |||
| Rg | Gate Resistance | VGS =VDS =0V, f =1.0MHz | 9 | Ω | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!