Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 6.9A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 65mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1.3V@250uA |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 122pF |
| Number | 1 N-Channel + 1 P-Channel |
| Output Capacitance(Coss) | 190pF |
| Input Capacitance(Ciss) | 920pF |
| Pd - Power Dissipation | 2W |
| Gate Charge(Qg) | 18.5nC@10V |
| Description | N-Channel+P-Channel Array 30V 6.9A 2W Surface Mount SOP-8 |
| Mfr. Part # | BRCS4606SC |
| Package | SOP-8 |
| Model Number | BRCS4606SC |
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Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 6.9A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 65mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1.3V@250uA | Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 122pF | Number | 1 N-Channel + 1 P-Channel |
| Output Capacitance(Coss) | 190pF | Input Capacitance(Ciss) | 920pF |
| Pd - Power Dissipation | 2W | Gate Charge(Qg) | 18.5nC@10V |
| Description | N-Channel+P-Channel Array 30V 6.9A 2W Surface Mount SOP-8 | Mfr. Part # | BRCS4606SC |
| Package | SOP-8 | Model Number | BRCS4606SC |
The BRCS4606SC is a complementary enhancement mode MOSFET offered in a SOP-8 plastic package. It is designed for high-efficiency switching DC/DC converters and power switch applications. This device is well-suited for use as a load switch or in PWM applications. The product is halogen-free.
| Parameter | Symbol | N-channel Rating | P-channel Rating | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | -30 | V |
| Gate-Source Voltage | VGS | 12 | V | |
| Continuous Drain Current (TA=25) | ID | 6.9 | -6.0 | A |
| Continuous Drain Current (TA=70) | ID | 5.8 | -5.0 | A |
| Pulsed Drain Current | IDM | 30 | A | |
| Power Dissipation (TA=25) | PD | 2 | W | |
| Power Dissipation (TA=70) | PD | 1.44 | W | |
| Maximum Junction-to-Ambient Thermal Resistance (t10s) | RJA(t10s) | 62.5 | /W | |
| Maximum Junction-to-Ambient Thermal Resistance | RJA | 110 | /W | |
| Maximum Junction-to-Lead Thermal Resistance | RJL | 60 | /W | |
| Junction and Storage Temperature Range | TJ,TSTG | -55 to +150 | ||
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=24V, VGS=0V | 1.0 | A | ||
| Zero Gate Voltage Drain Current (TJ=55) | IDSS | VDS=24V, VGS=0V | 5.0 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=12V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 0.65 | 1.3 | V | |
| On State Drain Current | ID(on) | VDS=4.5V, VGS=5.0V | 6.9 | A | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=6.9A | 24 | 32 | m | |
| Static Drain-Source On-Resistance (TJ=125) | RDS(on) | VGS=10V, ID=6.9A | 32.3 | 38 | m | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=5.0A | 27 | 36 | m | |
| Forward Transconductance | gFS | VDS=5.0V, ID=5.0A | 9 | S | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.76 | 1.0 | V | |
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1.0MHz | 680 | pF | ||
| Output Capacitance | Coss | VDS=15V, VGS=0V, f=1.0MHz | 102 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V, f=1.0MHz | 77 | pF | ||
| Gate Resistance | Rg | VDS=0V, VGS=0V, f=1.0MHz | 3.0 | |||
| Total Gate Charge (10V) | Qg | VGS=10V, VDS=15V, ID=6.9A | 13.84 | nC | ||
| Total Gate Charge (4.5V) | Qg | VGS=4.5V, VDS=15V, ID=5.0A | 6.74 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V, VDS=15V, ID=6.9A | 1.82 | nC | ||
| Gate-Drain Charge | Qgd | VGS=10V, VDS=15V, ID=6.9A | 3.2 | nC | ||
| Turn-On Delay Time | td(on) | VDS=15V, VGS=10V, RL=2.1, RGEN=3 | 4.6 | ns | ||
| Turn-On Rise Time | tr | VDS=15V, VGS=10V, RL=2.1, RGEN=3 | 4.1 | ns | ||
| Turn-Off Delay Time | td(off) | VDS=15V, VGS=10V, RL=2.1, RGEN=3 | 20.6 | ns | ||
| Turn-Off Fall Time | tf | VDS=15V, VGS=10V, RL=2.1, RGEN=3 | 5.2 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=6.9A, dI/dt=100A/s | 16.5 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=6.9A, dI/dt=100A/s | 7.8 | nC |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V, VGS=0V | -1.0 | A | ||
| Zero Gate Voltage Drain Current (TJ=55) | IDSS | VDS=-24V, VGS=0V | -5.0 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=12V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.5 | -0.7 | -1.3 | V |
| On State Drain Current | ID(on) | VDS=-4.5V, VGS=-5.0V | -6 | A | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-6.0A | 52 | 65 | m | |
| Static Drain-Source On-Resistance (TJ=125) | RDS(on) | VGS=-10V, ID=-6.0A | 57 | 86 | m | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-5.0A | 59 | 75 | m | |
| Forward Transconductance | gFS | VDS=-5.0V, ID=-5.0A | 12 | S | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.76 | -1.0 | V | |
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1.0MHz | 920 | pF | ||
| Output Capacitance | Coss | VDS=-15V, VGS=0V, f=1.0MHz | 190 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, f=1.0MHz | 122 | pF | ||
| Gate Resistance | Rg | VDS=0V, VGS=0V, f=1.0MHz | 3.6 | |||
| Total Gate Charge (10V) | Qg | VGS=-10V, VDS=-15V, ID=-6.0A | 18.5 | nC | ||
| Total Gate Charge (4.5V) | Qg | VGS=-4.5V, VDS=-15V, ID=-5.0A | 9.6 | nC | ||
| Gate-Source Charge | Qgs | VGS=-10V, VDS=-15V, ID=-6.0A | 2.7 | nC | ||
| Gate-Drain Charge | Qgd | VGS=-10V, VDS=-15V, ID=-6.0A | 4.5 | nC | ||
| Turn-On Delay Time | td(on) | VDS=-15V, VGS=-10V, RL=2.7, RGEN=3 | 7.7 | ns | ||
| Turn-On Rise Time | tr | VDS=-15V, VGS=-10V, RL=2.7, RGEN=3 | 5.7 | ns | ||
| Turn-Off Delay Time | td(off) | VDS=-15V, VGS=-10V, RL=2.7, RGEN=3 | 20.2 | ns | ||
| Turn-Off Fall Time | tf | VDS=-15V, VGS=-10V, RL=2.7, RGEN=3 | 9.5 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=-6.0A, dI/dt=100A/s | 20 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=-6.0A, dI/dt=100A/s | 8.8 | nC |
(Image of package dimensions would be here if available in text)
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Dimension (Reel) | Dimension (Inner Box) | Dimension (Outer Box) |
|---|---|---|---|---|---|---|---|---|
| SOP/ESOP-8 | 4,000 | 2 | 8,000 | 6 | 48,000 | 1312 | 36036050 | 380335366 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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