Hefei Purple Horn E-Commerce Co., Ltd.
| Configuration | - |
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 35A |
| RDS(on) | 77mΩ@20V |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | N-Channel |
| Pd - Power Dissipation | 188W |
| Gate Charge(Qg) | 61nC |
| Description | N-Channel 1.2kV 35A 188W TO-263-7 |
| Mfr. Part # | CMS120N080B |
| Package | TO-263-7 |
| Model Number | CMS120N080B |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Configuration | - | Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 35A | RDS(on) | 77mΩ@20V |
| Gate Threshold Voltage (Vgs(th)) | 4V | Type | N-Channel |
| Pd - Power Dissipation | 188W | Gate Charge(Qg) | 61nC |
| Description | N-Channel 1.2kV 35A 188W TO-263-7 | Mfr. Part # | CMS120N080B |
| Package | TO-263-7 | Model Number | CMS120N080B |
The Bruckewell CMS120N080B is a SiC N-Channel 1200-V (D-S) MOSFET designed for high-speed switching applications. It offers high blocking voltage and fast reverse recovery, contributing to low capacitance and high system efficiency. This MOSFET is suitable for easy paralleling and is ideal for demanding applications such as solar inverters, switch mode power supplies, UPS, induction heating and welding, EV charging stations, and high voltage DC/DC converters.
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 1200 | V | |||
| VGS | Gate-Source Voltage | -5 | 20 | V | ||
| ID | Continuous Drain Current (TC =25C) | 35 | A | |||
| ID | Continuous Drain Current(TC =100C) | 25 | A | |||
| ID,pulse | Pulsed Drain Current | 80 | A | |||
| Ptot | Power Dissipation (TC =25C) | 188 | W | |||
| EAS | Single Pulse Avalanche Energy, IAS=20A ,V=50V, L =1mH | 200 | mJ | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | 175 | C | ||
| Thermal Resistance Ratings | ||||||
| RJA | Maximum Junction-to-Ambient | 40 | C/W | |||
| RJC | Maximum Junction-to-Case | 0.8 | C/W | |||
| Static Electrical Characteristics (TJ=25C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =10mA | 2.0 | 2.8 | 4.0 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =1mA | 1200 | - | - | V |
| IGSS+ | Gate-Source Leakage Current | VDS =0V, VGS =20V | - | 0.1 | 100 | nA |
| IGSS- | VDS =0V, VGS =-5V | - | - | -100 | nA | |
| IDSS | Drain-Source Leakage Current | VDS =1200V, VGS =0V | - | - | 1.0 | A |
| VDS =1200V, VGS =0V, TJ =175C | - | 1.0 | - | A | ||
| RDS (on) | Static Drain-Source On-Resistance | VGS =20V, ID =20A | - | 77 | 100 | m |
| VGS =20V, ID =10A | - | 71 | 90 | m | ||
| VGS =20V, ID =20A, TJ =125C | - | 106 | - | m | ||
| VGS =20V, ID =20A, TJ =175C | - | 134 | - | m | ||
| Rg | Gate Input Resistance | f =1MHz,VAC =25mV, D-S short | - | 3.0 | - | |
| AC Electrical Characteristics (TJ=25C unless otherwise specified) | ||||||
| Qg | Total Gate Charge | VDD=800 V, IDS=20 A, VGS=-5/20V | - | 61 | - | nC |
| Qgs | Gate-Source Charge | - | 24 | - | nC | |
| Qgd | Gate-Drain Charge | - | 14 | - | nC | |
| td(on) | Turn-On Delay Time | VDD=800 V, IDS=20 A, RG(ext)=2.5 , VGS=-5/+20 V, L=975 H | - | 9 | - | ns |
| tr | Rise Time | - | 4 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 15 | - | ns | |
| tf | Fall Time | - | 10 | - | ns | |
| CISS | Input Capacitance | VGS=0 V, VDS=1000 V, f=200 kHz, VAC=25mV | - | 1377 | - | pF |
| COSS | Output Capacitance | - | 62 | - | pF | |
| CRSS | Reverse Transfer Capacitance | - | 4 | - | pF | |
| Eoss | Coss Stored Energy | - | 38 | - | J | |
| Eon | Turn-On Switching Energy | VDD=800 V, IDS=20 A, RG(ext)=2.5 , VGS=-5/+20 V, L=975 H | - | 208 | - | J |
| Eoff | Turn-Off Switching Energy | - | 25 | - | J | |
| Etot | Total Switching Energy | - | 233 | - | J | |
| Body Diode Characteristics (TJ=25C unless otherwise specified) | ||||||
| IS | Max Continuous Diode Forward Current | VGS=-5 V, TC=25 C | - | - | 43 | A |
| VSD | Diode Forward Voltage | VGS=-5 V, IS=10 A | - | 3.8 | - | V |
| trr | Reverse Recovery Time | IS=20 A, VR=800 V, VGS=-5 V, di/dt=8 A/s | - | 8 | - | ns |
| Qrr | Reverse Recovery Charge | - | 130 | - | nC | |
| Irrm | Peak Reverse Recovery Current | - | 29 | - | A | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!