Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 30mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.06nF |
| Pd - Power Dissipation | 85W |
| Gate Charge(Qg) | - |
| Description | N-Channel 60V 20A 85W Surface Mount TO-252 |
| Mfr. Part # | BRCS20N06DP |
| Package | TO-252 |
| Model Number | BRCS20N06DP |
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Product Specification
| Drain to Source Voltage | 60V | Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 30mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V | Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| Number | 1 N-channel | Input Capacitance(Ciss) | 1.06nF |
| Pd - Power Dissipation | 85W | Gate Charge(Qg) | - |
| Description | N-Channel 60V 20A 85W Surface Mount TO-252 | Mfr. Part # | BRCS20N06DP |
| Package | TO-252 | Model Number | BRCS20N06DP |
The BRCS20N06DP is an N-channel MOSFET in a TO-252 plastic package, designed for high-efficiency switching in low-voltage applications. It features low gate charge, low feedback capacitance, and fast switching speeds, making it ideal for automotive circuits, DC/DC converters, and power management in portable and battery-operated products. This MOSFET offers a drain-source voltage of 60V and a continuous drain current of 20A.
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V |
| Drain Current (Tc=25) | ID(Tc=25) | 20 | A |
| Drain Current (Tc=100) | ID(Tc=100) | 20 | A |
| Gate-Source Voltage | VGS | ±20 | V |
| Power Dissipation (Tc=25) | PD(Tc=25) | 85 | W |
| Operating and Storage Temperature Range | TJ,TSTG | -55 to 150 | |
| Thermal Resistance, Junction to Case | RJC | 1.7 | °C/W |
| Thermal Resistance, Junction to Ambient | RJA | 100 | °C/W |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | μA | ||
| Zero Gate Voltage Drain Current (TC=150) | IDSS | VDS=60V, TC=150 | 250 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250μA | 1.0 | 3.0 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=6A | 0.025 | 0.037 | Ω | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=4A | 0.030 | 0.042 | Ω | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | 1060 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | 315 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | 65 | pF | ||
| Turn-On Time | tON | VDD=30V, ID=20A, RGS=10Ω, VGS=4.5V | 240 | ns | ||
| Turn-On Delay Time | td(on) | VDD=30V, ID=20A, RGS=10Ω, VGS=4.5V | 12 | ns | ||
| Turn-On Rise Time | tr | VDD=30V, ID=20A, RGS=10Ω, VGS=4.5V | 145 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=30V, ID=20A, RGS=10Ω, VGS=4.5V | 27 | ns | ||
| Turn-Off Fall Time | tf | VDD=30V, ID=20A, RGS=10Ω, VGS=4.5V | 50 | ns | ||
| Turn-Off Time | toff | VDD=30V, ID=20A, RGS=10Ω, VGS=4.5V | 120 | ns | ||
| Turn-On Time | tON | VDD=30V, ID=20A, RGS=10Ω, VGS=10V | 65 | ns | ||
| Turn-On Delay Time | td(on) | VDD=30V, ID=20A, RGS=10Ω, VGS=10V | 7 | ns | ||
| Turn-On Rise Time | tr | VDD=30V, ID=20A, RGS=10Ω, VGS=10V | 35 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=30V, ID=20A, RGS=10Ω, VGS=10V | 52 | ns | ||
| Turn-Off Fall Time | tf | VDD=30V, ID=20A, RGS=10Ω, VGS=10V | 50 | ns | ||
| Turn-Off Time | toff | VDD=30V, ID=20A, RGS=10Ω, VGS=10V | 155 | ns | ||
| Total Gate Charge | Qg(TOT) | VGS = 0V to 10V, VDD = 30V, ID = 20A, Ig(REF)=1.0mA | 28 | 34 | nC | |
| Gate Charge at 5V | Qg(5) | VGS = 0V to 5V | 16 | 20 | nC | |
| Threshold Gate Charge | Qg(TH) | VGS = 0V to 1V | 1.2 | 1.5 | nC | |
| Gate to Source Gate Charge | Qgs | 3.5 | nC | |||
| Gate to Drain “Miller” Charge | Qgd | 7 | nC | |||
| Source to Drain Diode Voltage | VSD | ISD = 20A | 1.25 | V | ||
| Reverse Recovery Time | trr | ISD = 20A, dISD/dt = 100A/μs | 90 | ns | ||
| Reverse Recovered Charge | QRR | ISD = 20A, dISD/dt = 100A/μs | 225 | nC |
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Dimension (mm³) |
|---|---|---|---|---|---|---|
| TO-252 | 2,500 | 2 | 5,000 | 5 | 25,000 | 13”×16, 360×360×50 |
| Package Type | Units/Tube | Tubes/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Dimension (mm³) |
|---|---|---|---|---|---|---|
| TO-251/252 | 75 | 48 | 3,600 | 5 | 18,000 | 526×20.5×5.25, 555×164×50 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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