| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 3.8A |
| RDS(on) | 29mΩ@4.5V,3.8A |
| Gate Threshold Voltage (Vgs(th)) | 620mV@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 101pF@6V |
| Pd - Power Dissipation | 1.2W |
| Input Capacitance(Ciss) | 500pF@6V |
| Gate Charge(Qg) | 8.5nC@4.5V |
| Description | 12V 3.8A 1.2W Surface Mount SOT-23 |
| Mfr. Part # | ESJ2305 |
| Package | SOT-23 |
| Model Number | ESJ2305 |
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Product Specification
| Drain to Source Voltage | 12V | Current - Continuous Drain(Id) | 3.8A |
| RDS(on) | 29mΩ@4.5V,3.8A | Gate Threshold Voltage (Vgs(th)) | 620mV@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 101pF@6V | Pd - Power Dissipation | 1.2W |
| Input Capacitance(Ciss) | 500pF@6V | Gate Charge(Qg) | 8.5nC@4.5V |
| Description | 12V 3.8A 1.2W Surface Mount SOT-23 | Mfr. Part # | ESJ2305 |
| Package | SOT-23 | Model Number | ESJ2305 |
The ESJ2305 is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen-free.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | -12 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current (TA=25°C) | ID | -3.8 | A | |||
| Continuous Drain Current (TA=100°C) | ID | -2.3 | A | |||
| Maximum Power Dissipation (TA=25°C) | PD | 1.2 | W | |||
| Pulsed Drain Current | IDM | -15 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -12 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-12V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.4 | -0.62 | -1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-3.8A | 29 | 40 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-2.5V, ID=-3A | 45 | 60 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-1.8V, ID=-2.5A | 67 | 85 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-6V, f=1MHz | 500 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-6V, f=1MHz | 118 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-6V, f=1MHz | 101 | pF | ||
| Total Gate Charge | QG | VGS=-4.5V, VDS=-6V, ID =-3.8A | 8.5 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-4.5V, VDS=-6V, ID =-3.8A | 1.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-4.5V, VDS=-6V, ID =-3.8A | 2.6 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-6V, ID=-3.8A, RG=3Ω | 6 | ns | ||
| Rise Time | tr | VGS=-4.5V, VDS=-6V, ID=-3.8A, RG=3Ω | 35 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-4.5V, VDS=-6V, ID=-3.8A, RG=3Ω | 50 | ns | ||
| Fall Time | tf | VGS=-4.5V, VDS=-6V, ID=-3.8A, RG=3Ω | 52 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-3.8A | -1.5 | V | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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