| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 3.3A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 45mΩ@4.5V;62mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 700mV@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 35pF |
| Input Capacitance(Ciss) | 200pF |
| Pd - Power Dissipation | 400mW |
| Gate Charge(Qg) | 3nC@4.5V |
| Description | N-Channel 20V 3.3A 400mW Surface Mount SOT-23 |
| Mfr. Part # | Si2302CDS-T1-GE3-ES |
| Package | SOT-23 |
| Model Number | Si2302CDS-T1-GE3-ES |
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Product Specification
| Drain to Source Voltage | 20V | Current - Continuous Drain(Id) | 3.3A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 45mΩ@4.5V;62mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 700mV@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF | Number | 1 N-channel |
| Output Capacitance(Coss) | 35pF | Input Capacitance(Ciss) | 200pF |
| Pd - Power Dissipation | 400mW | Gate Charge(Qg) | 3nC@4.5V |
| Description | N-Channel 20V 3.3A 400mW Surface Mount SOT-23 | Mfr. Part # | Si2302CDS-T1-GE3-ES |
| Package | SOT-23 | Model Number | Si2302CDS-T1-GE3-ES |
The SI2302CDS-T1-GE3-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features a high-density cell design for low RDS(on), material that is Halogen free, and is reliable, rugged, ESD protected, and has low leakage current.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25 | 3.3 | A | ||
| Continuous Drain Current | ID | TA=100 | 2.1 | A | ||
| Maximum Power Dissipation | PD | 0.9 | mW | |||
| Pulsed Drain Current | IDM | 13.2 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 138 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.4 | 0.7 | 1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=3A | 45 | 55 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=2A | 62 | 85 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 200 | pF | ||
| Output Capacitance | COSS | 35 | pF | |||
| Reverse Transfer Capacitance | CRSS | 28 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=2A | 3 | nC | ||
| Gate-to-Source Charge | QGS | 0.5 | ||||
| Gate-to-Drain Charge | QGD | 0.7 | ||||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 3 | ns | ||
| Rise Time | tr | 11 | ||||
| Turn-Off Delay Time | td(OFF) | 20 | ||||
| Fall Time | tf | 8 | ||||
| Forward Voltage | VSD | VGS=0V, IS=3A | 1.5 | V | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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