| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 140A |
| RDS(on) | 2mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 480pF |
| Output Capacitance(Coss) | 2.8nF |
| Pd - Power Dissipation | 83W |
| Input Capacitance(Ciss) | 3.83nF |
| Gate Charge(Qg) | 66nC@10V |
| Description | N-Channel 40V 140A 83W Through Hole TO-220 |
| Mfr. Part # | IRF1404PBF(ES) |
| Package | TO-220 |
| Model Number | IRF1404PBF(ES) |
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Product Specification
| Drain to Source Voltage | 40V | Current - Continuous Drain(Id) | 140A |
| RDS(on) | 2mΩ@10V | Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Type | N-Channel | Reverse Transfer Capacitance (Crss@Vds) | 480pF |
| Output Capacitance(Coss) | 2.8nF | Pd - Power Dissipation | 83W |
| Input Capacitance(Ciss) | 3.83nF | Gate Charge(Qg) | 66nC@10V |
| Description | N-Channel 40V 140A 83W Through Hole TO-220 | Mfr. Part # | IRF1404PBF(ES) |
| Package | TO-220 | Model Number | IRF1404PBF(ES) |
The IRF1404PBF(ES) is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced shielded gate trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is a standard, Pb-free product.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 140 | A | ||
| Maximum Power Dissipation | PD | 83 | W | |||
| Pulsed Drain Current | IDM | 560 | A | |||
| Single Pulse Avalanche Energy | EAS | Starting TJ=25°C, VDD=32V, VG=10V, RG=25Ω, L=0.5mH | 200 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Single Operation | ||||||
| Junction-to-Case Thermal Resistance | RθJC | 1.5 | °C/W | |||
| Electrical Characteristics | ||||||
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 2.5 | V | |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 2.0 | 2.3 | mΩ | |
| VGS=4.5V, ID=20A | 3.0 | 3.8 | mΩ | |||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 3830 | pF | ||
| Output Capacitance | COSS | 2800 | pF | |||
| Reverse Transfer Capacitance | CRSS | 480 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=10V, VDD=32V, ID=10A | 66 | nC | ||
| Gate-to-Source Charge | QGS | 13.6 | nC | |||
| Gate-to-Drain Charge | QGD | 12.6 | nC | |||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=20V, ID=20A, RG=0.5Ω | 890 | ns | ||
| Rise Time | tr | 21 | ns | |||
| Turn-Off Delay Time | td(OFF) | 72 | ns | |||
| Fall Time | tf | 34 | ns | |||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=20A | 1.5 | V | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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