Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 300mA |
| RDS(on) | 1.85Ω@10V,300mA |
| Gate Threshold Voltage (Vgs(th)) | 1.6V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF@25V |
| Input Capacitance(Ciss) | 28pF@25V |
| Pd - Power Dissipation | 350mW |
| Gate Charge(Qg) | 1.8nC@4.5V |
| Description | 60V 300mA 350mW Surface Mount SOT-363 |
| Mfr. Part # | ES2N7002KDW1T1G |
| Package | SOT-363 |
| Model Number | ES2N7002KDW1T1G |
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Product Specification
| Drain to Source Voltage | 60V | Current - Continuous Drain(Id) | 300mA |
| RDS(on) | 1.85Ω@10V,300mA | Gate Threshold Voltage (Vgs(th)) | 1.6V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF@25V | Input Capacitance(Ciss) | 28pF@25V |
| Pd - Power Dissipation | 350mW | Gate Charge(Qg) | 1.8nC@4.5V |
| Description | 60V 300mA 350mW Surface Mount SOT-363 | Mfr. Part # | ES2N7002KDW1T1G |
| Package | SOT-363 | Model Number | ES2N7002KDW1T1G |
The ES2N7002KDW1T1G is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering high density cell design for low on-resistance and ESD protection.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25 | 0.3 | A | ||
| Continuous Drain Current | ID | TA=100 | 0.2 | A | ||
| Maximum Power Dissipation | PD | 350 | mW | |||
| Pulsed Drain Current | IDM | 1.2 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | to | 150 | °C | |
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 357 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.6 | 2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=0.3A | 1.85 | 2.2 | Ω | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.2A | 2.05 | 3.0 | Ω | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 28 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 11 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 4 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=0.3A | 1.8 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=0.3A | 0.3 | |||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=0.3A | 0.6 | |||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=10V, ID=0.2A, RG=10Ω | 2 | ns | ||
| Rise Time | tr | VGS=10V, VDS=10V, ID=0.2A, RG=10Ω | 15 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=10V, ID=0.2A, RG=10Ω | 7 | ns | ||
| Fall Time | tf | VGS=10V, VDS=10V, ID=0.2A, RG=10Ω | 20 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=0.3A | 1.5 | V | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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