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Hefei Purple Horn E-Commerce Co., Ltd.

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China Low Input Capacitance N Channel MOSFET Diodes DMN33D8LTQ 13 with PPAP Capability
China Low Input Capacitance N Channel MOSFET Diodes DMN33D8LTQ 13 with PPAP Capability

  1. China Low Input Capacitance N Channel MOSFET Diodes DMN33D8LTQ 13 with PPAP Capability

Low Input Capacitance N Channel MOSFET Diodes DMN33D8LTQ 13 with PPAP Capability

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Drain to Source Voltage 30V
Current - Continuous Drain(Id) 115mA
Operating Temperature - -55℃~+150℃
RDS(on) 5Ω@4V
Gate Threshold Voltage (Vgs(th)) 1.5V@100uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 8pF
Number 1 N-channel
Output Capacitance(Coss) 11pF
Input Capacitance(Ciss) 48pF
Pd - Power Dissipation 300mW
Gate Charge(Qg) 1.23nC@10V
Description N-Channel 30V 115mA 300mW Surface Mount SOT-523
Mfr. Part # DMN33D8LTQ-13
Package SOT-523
Model Number DMN33D8LTQ-13

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  1. Product Details
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Product Specification

Drain to Source Voltage 30V Current - Continuous Drain(Id) 115mA
Operating Temperature - -55℃~+150℃ RDS(on) 5Ω@4V
Gate Threshold Voltage (Vgs(th)) 1.5V@100uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 8pF Number 1 N-channel
Output Capacitance(Coss) 11pF Input Capacitance(Ciss) 48pF
Pd - Power Dissipation 300mW Gate Charge(Qg) 1.23nC@10V
Description N-Channel 30V 115mA 300mW Surface Mount SOT-523 Mfr. Part # DMN33D8LTQ-13
Package SOT-523 Model Number DMN33D8LTQ-13

Product Overview

The Diodes Incorporated DMN33D8LTQ is an N-channel enhancement mode MOSFET designed to meet the stringent requirements of automotive applications. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. This device offers low on-resistance, low input capacitance, and fast switching speeds, making it ideal for Brushless DC Motor Control, DC-DC Converters, and Load Switch applications. The MOSFET features ESD protection for the gate, is totally lead-free, fully RoHS compliant, and halogen and antimony free (Green Device).

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Qualification: AEC-Q101
  • PPAP Capable: Yes
  • Manufacturing Certification: IATF 16949
  • Environmental Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
  • Gate Protection: ESD Protected Gate 2KV
  • Case Material: Molded Plastic, Green Molding Compound, UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Finish: Matte Tin Finish Annealed Over Alloy 42 Leadframe (Lead Free Plating)

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage BVDSS 30 V VGS = 0V, ID = 250A
Gate-Source Voltage VGSS ±20 V
Drain Current (Continuous) ID 115 mA TA = +25°C (Note 5)
Static Drain-Source On-Resistance RDS(ON) 5 Ω VGS = 4V, ID = 10mA
Static Drain-Source On-Resistance RDS(ON) 7 Ω VGS = 2.5V, ID = 5mA
Total Power Dissipation PD 240 mW TA = +25°C (Note 5)
Thermal Resistance, Junction to Ambient RθJA 521 °C/W TA = +25°C (Note 5)
Total Power Dissipation PD 300 mW TA = +25°C (Note 6)
Thermal Resistance, Junction to Ambient RθJA 420 °C/W TA = +25°C (Note 6)
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Zero Gate Voltage Drain Current IDSS 1.0 µA VDS = 30V, VGS = 0V
Gate-Body Leakage IGSS ±10 µA VGS = ±20V, VDS = 0V
Gate Threshold Voltage VGS(TH) 0.8 - 1.5 V VDS = 3V, ID = 100µA
Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 115mA
Input Capacitance Ciss 48 pF VDS = 5V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 11 pF VDS = 5V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 8 pF VDS = 5V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V) Qg 0.55 nC VGS = 10V, VDS = 10V, ID = 250mA
Total Gate Charge (VGS = 10V) Qg 1.23 nC VGS = 10V, VDS = 10V, ID = 250mA
Gate-Source Charge Qgs 0.14 nC VGS = 10V, VDS = 10V, ID = 250mA
Gate-Drain Charge Qgd 0.14 nC VGS = 10V, VDS = 10V, ID = 250mA
Turn-On Delay Time tD(ON) 2.9 ns VDD = 30V, ID = 0.2A, VGEN = 10V, RGEN = 25Ω
Turn-On Rise Time tR 2.6 ns VDD = 30V, ID = 0.2A, VGEN = 10V, RGEN = 25Ω
Turn-Off Delay Time tD(OFF) 18.2 ns VDD = 30V, ID = 0.2A, VGEN = 10V, RGEN = 25Ω
Turn-Off Fall Time tF 13.6 ns VDD = 30V, ID = 0.2A, VGEN = 10V, RGEN = 25Ω
Case SOT523
Weight (Approximate) 0.002 grams
Packaging (3,000/Tape & Reel) DMN33D8LTQ-7 SOT523
Packaging (10,000/Tape & Reel) DMN33D8LTQ-13 SOT523

Package Outline Dimensions (SOT523)

All Dimensions in mm

Dim Min Max Typ
A1 0.00 0.10 0.05
A2 0.60 0.80 0.75
A3 0.45 0.65 0.50
b 0.15 0.30 0.22
c 0.10 0.20 0.12
D 1.50 1.70 1.60
E 1.45 1.75 1.60
E1 0.75 0.85 0.80
e 0.50 BSC
e1 0.90 1.10 1.00
L 0.20 0.40 0.33
a 0° 8°

Suggested Pad Layout (SOT523)

Dimensions in mm

Dimension Value
C 1.29
X 0.40
X1 0.70
Y 0.51
Y1 1.80

2412251120_DIODES-DMN33D8LTQ-13_C5441039.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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