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Hefei Purple Horn E-Commerce Co., Ltd.

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China High Reliability N Channel MOSFET Diodes DMN6075S 7 Ideal for Power Management
China High Reliability N Channel MOSFET Diodes DMN6075S 7 Ideal for Power Management

  1. China High Reliability N Channel MOSFET Diodes DMN6075S 7 Ideal for Power Management

High Reliability N Channel MOSFET Diodes DMN6075S 7 Ideal for Power Management

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Drain to Source Voltage 60V
Current - Continuous Drain(Id) 2.5A
Operating Temperature - -55℃~+150℃
RDS(on) 120mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)) 3V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 24.6pF
Number 1 N-channel
Output Capacitance(Coss) 32.6pF
Input Capacitance(Ciss) 606pF
Pd - Power Dissipation 700mW
Gate Charge(Qg) 12.3nC@10V
Description N-Channel 60V 2.5A 0.7W Surface Mount SOT-23
Mfr. Part # DMN6075S-7
Package SOT-23
Model Number DMN6075S-7

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  1. Product Details
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Product Specification

Drain to Source Voltage 60V Current - Continuous Drain(Id) 2.5A
Operating Temperature - -55℃~+150℃ RDS(on) 120mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)) 3V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 24.6pF Number 1 N-channel
Output Capacitance(Coss) 32.6pF Input Capacitance(Ciss) 606pF
Pd - Power Dissipation 700mW Gate Charge(Qg) 12.3nC@10V
Description N-Channel 60V 2.5A 0.7W Surface Mount SOT-23 Mfr. Part # DMN6075S-7
Package SOT-23 Model Number DMN6075S-7

Product Overview

The Diodes Incorporated DMN6075S is a new generation N-channel enhancement mode MOSFET designed for high efficiency power management applications. It offers minimized on-state resistance (RDS(ON)) while maintaining superior switching performance. Key applications include DC-DC converters and power management functions. This device is characterized by its low input capacitance, fast switching speed, and is manufactured as a totally lead-free, fully RoHS compliant, and halogen/antimony-free "Green" device. It is also qualified to AEC-Q101 standards for high reliability.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
  • Reliability: Qualified to AEC-Q101 Standards
  • Case Material: Molded Plastic, "Green" Molding Compound
  • UL Flammability Classification: Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Finish: Matte Tin Annealed over Copper Leadframe

Technical Specifications

Characteristic Symbol Min Typ Max Unit Test Condition
Drain-Source Voltage BVDSS 60 V VGS = 0V, ID = 250A
Gate Threshold Voltage VGS(TH) 1 3 V VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS(ON) 69 85 m VGS = 10V, ID = 3.2A
75 120 m VGS = 4.5V, ID = 2.8A
Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 2.5A
Input Capacitance Ciss 606 pF VDS = 20V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 32.6 pF VDS = 20V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 24.6 pF VDS = 20V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 10V) Qg 12.3 nC VDS = 30V, ID = 3A
Total Gate Charge (VGS = 4.5V) Qg 5.6 nC VDS = 30V, ID = 3A
Gate-Source Charge Qgs 1.7 nC VDS = 30V, ID = 3A
Gate-Drain Charge Qgd 1.9 nC VDS = 30V, ID = 3A
Turn-On Delay Time tD(ON) 3.5 ns VGS = 10V, VDS = 30V, Rg = 20, RL = 50
Turn-On Rise Time tR 4.1 ns VGS = 10V, VDS = 30V, Rg = 20, RL = 50
Turn-Off Delay Time tD(OFF) 35 ns VGS = 10V, VDS = 30V, Rg = 20, RL = 50
Turn-Off Fall Time tF 11 ns VGS = 10V, VDS = 30V, Rg = 20, RL = 50
Continuous Drain Current (Note 5) ID 2.0 A VGS = 10V, Steady State, TA = +25C
Continuous Drain Current (Note 5) ID 1.5 A VGS = 10V, Steady State, TA = +70C
Continuous Drain Current (Note 6) ID 2.5 A VGS = 10V, Steady State, TA = +25C
Continuous Drain Current (Note 6) ID 2.0 A VGS = 10V, Steady State, TA = +70C
Maximum Body Diode Forward Current (Note 5) IS 2.0 A
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) IDM 12 A
Total Power Dissipation (Note 5) PD 0.8 W TA = +25C
Total Power Dissipation (Note 5) PD 0.5 W TA = +70C
Thermal Resistance, Junction to Ambient (Note 5) RJA 157 C/W Steady State
Total Power Dissipation (Note 6) PD 1.15 W TA = +25C
Total Power Dissipation (Note 6) PD 0.7 W TA = +70C
Thermal Resistance, Junction to Ambient (Note 6) RJA 110 C/W Steady State
Operating and Storage Temperature Range TJ, TSTG -55 +150 C
Weight 0.008 grams Approximate

Ordering Information

Product Reel Size (inches) Tape Width (mm) Quantity per Reel
DMN6075S-7 7 8 3,000
DMN6075S-13 13 8 10,000

Package Dimensions (SOT23)

Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
a 0 8 --

All Dimensions in mm


2412251006_DIODES-DMN6075S-7_C155242.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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