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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China DIODES DMN62D0LFB 7B N channel MOSFET with minimized RDS ON and lead free green
China DIODES DMN62D0LFB 7B N channel MOSFET with minimized RDS ON and lead free green

  1. China DIODES DMN62D0LFB 7B N channel MOSFET with minimized RDS ON and lead free green

DIODES DMN62D0LFB 7B N channel MOSFET with minimized RDS ON and lead free green

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Drain to Source Voltage 60V
Current - Continuous Drain(Id) 320mA
Operating Temperature - -55℃~+150℃
RDS(on) 2Ω@4V,100mA
Gate Threshold Voltage (Vgs(th)) 1V
Reverse Transfer Capacitance (Crss@Vds) 6pF@25V
Number -
Input Capacitance(Ciss) 64pF@25V
Pd - Power Dissipation 500mW
Gate Charge(Qg) 450pC@4.5V
Description 60V 320mA 0.5W Surface Mount X1-DFN1006-3
Mfr. Part # DMN62D0LFB-7B
Package X1-DFN1006-3
Model Number DMN62D0LFB-7B

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 60V Current - Continuous Drain(Id) 320mA
Operating Temperature - -55℃~+150℃ RDS(on) 2Ω@4V,100mA
Gate Threshold Voltage (Vgs(th)) 1V Reverse Transfer Capacitance (Crss@Vds) 6pF@25V
Number - Input Capacitance(Ciss) 64pF@25V
Pd - Power Dissipation 500mW Gate Charge(Qg) 450pC@4.5V
Description 60V 320mA 0.5W Surface Mount X1-DFN1006-3 Mfr. Part # DMN62D0LFB-7B
Package X1-DFN1006-3 Model Number DMN62D0LFB-7B

Product Overview

The Diodes Incorporated DMN62D0LFB is a new generation N-channel enhancement mode MOSFET designed for high-efficiency power management applications. It offers minimized on-state resistance (RDS(ON)) and superior switching performance. Ideal for DC-DC converters, power management functions, battery-operated systems, solid-state relays, and various driver applications (relays, solenoids, lamps, displays, etc.). Features include low on-resistance, low input capacitance, fast switching speed, low input/output leakage, and ESD protection. This device is totally lead-free, fully RoHS compliant, and Halogen and Antimony free ("Green" Device).

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Compliance: Totally Lead-Free, Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
  • ESD Protected: Yes
  • Certifications: AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities (for automotive applications, contact sales)

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Product Summary
Breakdown Voltage (Drain-Source) BVDSS 60 V TA = +25C
On-Resistance (Max) RDS(ON) 2 VGS = 4V
On-Resistance (Max) RDS(ON) 2.5 VGS = 2.5V
Continuous Drain Current (Max) ID 320 mA TA = +25C
Continuous Drain Current (Max) ID 50 mA TA = +70C
Maximum Ratings
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (Steady State, VGS = 4.0V, TA = +25C) ID 320 mA
Continuous Drain Current (Steady State, VGS = 4.0V, TA = +70C) ID 75 mA
Pulsed Drain Current IDM 1 A (Note 6)
Power Dissipation PD 0.5 W (Note 5)
Thermal Resistance, Junction to Ambient RJA 258 C/W @TA = +25C (Note 5)
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current IDSS 1.0 A TJ = +25C, VDS = 60V, VGS = 0V
Gate-Source Leakage IGSS ±100 nA VGS = ±5V, VDS = 0V
Gate Threshold Voltage VGS(TH) 0.6 - 1.0 V VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS(ON) 1.3 - 2 VGS = 4V, ID = 100mA
Static Drain-Source On-Resistance RDS(ON) 1.5 - 2.5 VGS = 2.5V, ID = 50mA
Forward Transfer Admittance |Yfs| 0.8 S VDS = 10V, ID = 200mA
Diode Forward Voltage VSD 0.9 - 1.3 V VGS = 0V, IS = 115mA
Dynamic Characteristics
Input Capacitance Ciss 32 - 64 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 4.4 - 9 pF
Reverse Transfer Capacitance Crss 2.9 - 6 pF
Gate Resistance Rg 126 - 250 VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge Qg 0.45 - 0.9 nC VGS = 4.5V, VDS = 10V, ID = 250mA
Gate-Source Charge Qgs 0.08 - 0.2 nC
Gate-Drain Charge Qgd 0.08 - 0.2 nC
Turn-On Delay Time tD(ON) 3.4 - 10 ns VGS = 10V, VDS = 30V, RL = 150, Rg = 25, ID = 200mA
Turn-On Rise Time tR 3.4 - 10 ns
Turn-Off Delay Time tD(OFF) 26.4 - 45 ns
Turn-Off Fall Time tF 16.3 - 30 ns
Mechanical Data
Case X1-DFN1006-3
Case Material Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0
Moisture Sensitivity Level 1 per J-STD-020
Terminals Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208
Weight 0.001 grams (Approximate)
Ordering Information
Part Number DMN62D0LFB-7 X1-DFN1006-3 3,000 /Tape & Reel
Part Number DMN62D0LFB-7B X1-DFN1006-3 10,000 /Tape & Reel

2411220716_DIODES-DMN62D0LFB-7B_C6934858.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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