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Hefei Purple Horn E-Commerce Co., Ltd.

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China Power Management N Channel MOSFET DIODES DMN24H3D5L 7 Ideal for Battery Operated
China Power Management N Channel MOSFET DIODES DMN24H3D5L 7 Ideal for Battery Operated

  1. China Power Management N Channel MOSFET DIODES DMN24H3D5L 7 Ideal for Battery Operated

Power Management N Channel MOSFET DIODES DMN24H3D5L 7 Ideal for Battery Operated

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Drain to Source Voltage 240V
Current - Continuous Drain(Id) 480mA
Operating Temperature - -55℃~+150℃
RDS(on) 3.5Ω@10V,0.48A
Gate Threshold Voltage (Vgs(th)) 2.5V
Reverse Transfer Capacitance (Crss@Vds) 8pF@25V
Number 1 N-channel
Input Capacitance(Ciss) 188pF@25V
Pd - Power Dissipation 760mW
Gate Charge(Qg) 6.6nC
Description N-Channel 240V 0.48A 0.76W Surface Mount SOT-23
Mfr. Part # DMN24H3D5L-7
Package SOT-23
Model Number DMN24H3D5L-7

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 240V Current - Continuous Drain(Id) 480mA
Operating Temperature - -55℃~+150℃ RDS(on) 3.5Ω@10V,0.48A
Gate Threshold Voltage (Vgs(th)) 2.5V Reverse Transfer Capacitance (Crss@Vds) 8pF@25V
Number 1 N-channel Input Capacitance(Ciss) 188pF@25V
Pd - Power Dissipation 760mW Gate Charge(Qg) 6.6nC
Description N-Channel 240V 0.48A 0.76W Surface Mount SOT-23 Mfr. Part # DMN24H3D5L-7
Package SOT-23 Model Number DMN24H3D5L-7

Product Overview

The Diodes Incorporated DMN24H3D5L is a new generation N-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for DC-DC converters, power management functions, battery-operated systems, solid-state relays, and various driver applications (relays, solenoids, lamps, displays, etc.).

Product Attributes

  • Brand: Diodes Incorporated
  • Product Line: DMN24H3D5L
  • Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
  • Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Product Summary
Drain-Source Voltage (VBRDSS) V(BR)DSS 240 V TA = +25C
On-Resistance (RDS(ON)) RDS(ON) 3.5 VGS = 10V
On-Resistance (RDS(ON)) RDS(ON) 3.5 VGS = 4.5V
On-Resistance (RDS(ON)) RDS(ON) 6.0 VGS = 3.3V
Continuous Drain Current (ID) ID 0.48 A TA = +25C, VGS = 10V
Continuous Drain Current (ID) ID 0.48 A TA = +25C, VGS = 4.5V
Continuous Drain Current (ID) ID 0.37 A TA = +25C, VGS = 3.3V
Maximum Ratings
Drain-Source Voltage VDSS 240 V @TA = +25C, unless otherwise specified.
Gate-Source Voltage VGSS 20 V @TA = +25C, unless otherwise specified.
Continuous Drain Current (Note 6) ID 0.48 / 0.39 A VGS = 10V, Steady State, TA = +25C / +70C
Pulsed Drain Current (10s pulse, duty cycle 1%) IDM 1.9 A @TA = +25C, unless otherwise specified.
Maximum Body Diode Continuous Current (Note 6) IS 1.5 A @TA = +25C, unless otherwise specified.
Thermal Characteristics
Total Power Dissipation (Note 5) PD 0.76 / 1.26 W @TA = +25C, unless otherwise specified. (Note 6)
Thermal Resistance, Junction to Ambient (Note 5) RJA 163 / 99 C/W @TA = +25C, unless otherwise specified. (Note 6)
Thermal Resistance, Junction to Case (Note 6) RJC 31 C/W @TA = +25C, unless otherwise specified.
Operating and Storage Temperature Range TJ, TSTG -55 to 150 C @TA = +25C, unless otherwise specified.
Electrical Characteristics
Drain-Source Breakdown Voltage BV DSS 240 V VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current IDSS 1.0 A VDS = 192V, VGS = 0V
Gate-Body Leakage IGSS 100 nA VGS = 20V, VDS = 0V
Gate Threshold Voltage VGS(th) 1.0 / 1.95 / 2.5 V VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS(ON) 3.5 VGS = 10V, ID = 0.3A
Static Drain-Source On-Resistance RDS(ON) 3.5 VGS = 4.5V, ID = 0.2A
Static Drain-Source On-Resistance RDS(ON) 6.0 VGS = 3.3V, ID = 0.1A
Diode Forward Voltage VSD 0.7 / 1.2 V VGS = 0V, IS = 0.3A
Dynamic Characteristics
Input Capacitance Ciss 188 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 11 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 8 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Gate Resistance Rg 3.86 VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge Qg 6.6 nC VDS = 192V, VGS = 10V, ID = 0.5A
Gate-Source Charge Qgs 0.8 nC VDS = 192V, VGS = 10V, ID = 0.5A
Gate-Drain Charge Qgd 2.1 nC VDS = 192V, VGS = 10V, ID = 0.5A
Turn-On Delay Time tD(on) 2.3 nS VDS = 60V, RL =200, VGS = 10V, RG = 25
Turn-On Rise Time tr 2.0 nS VDS = 60V, RL =200, VGS = 10V, RG = 25
Turn-Off Delay Time tD(off) 21 nS VDS = 60V, RL =200, VGS = 10V, RG = 25
Turn-Off Fall Time tf 7.2 nS VDS = 60V, RL =200, VGS = 10V, RG = 25
Mechanical Data
Case SOT23
Weight 0.008 grams (Approximate)
Ordering Information
Part Number Case Packaging
DMN24H3D5L-7 SOT23 3,000/Tape & Reel
DMN24H3D5L-13 SOT23 10,000/Tape & Reel

2005271003_DIODES-DMN24H3D5L-7_C460052.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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