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Hefei Purple Horn E-Commerce Co., Ltd.

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China PowerDI5060 8 Package 100V N Channel MOSFET Diodes DMT10H010LPS 13 for Cooler
China PowerDI5060 8 Package 100V N Channel MOSFET Diodes DMT10H010LPS 13 for Cooler

  1. China PowerDI5060 8 Package 100V N Channel MOSFET Diodes DMT10H010LPS 13 for Cooler

PowerDI5060 8 Package 100V N Channel MOSFET Diodes DMT10H010LPS 13 for Cooler

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Drain to Source Voltage 100V
Current - Continuous Drain(Id) 98A
Operating Temperature - -55℃~+150℃
RDS(on) 6.9mΩ@10V
Gate Threshold Voltage (Vgs(th)) 1.9V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 44pF
Number 1 N-channel
Output Capacitance(Coss) 764pF
Input Capacitance(Ciss) 4.166nF
Pd - Power Dissipation 139W
Gate Charge(Qg) 58.4nC@10V
Description N-Channel 100V 98A 139W Surface Mount PowerDI-5060-8
Mfr. Part # DMT10H010LPS-13
Package PowerDI-5060-8
Model Number DMT10H010LPS-13

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 100V Current - Continuous Drain(Id) 98A
Operating Temperature - -55℃~+150℃ RDS(on) 6.9mΩ@10V
Gate Threshold Voltage (Vgs(th)) 1.9V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 44pF Number 1 N-channel
Output Capacitance(Coss) 764pF Input Capacitance(Ciss) 4.166nF
Pd - Power Dissipation 139W Gate Charge(Qg) 58.4nC@10V
Description N-Channel 100V 98A 139W Surface Mount PowerDI-5060-8 Mfr. Part # DMT10H010LPS-13
Package PowerDI-5060-8 Model Number DMT10H010LPS-13

Product Overview

The Diodes Incorporated DMT10H010LPS is a 100V N-Channel Enhancement Mode MOSFET designed for high efficiency and superior switching performance. It minimizes RDS(ON) to reduce on-state losses and is ideal for notebook battery power management and load switch applications. This device features a thermally efficient PowerDI5060-8 package, making it suitable for thin applications and cooler-running designs.

Product Attributes

  • Brand: Diodes Incorporated
  • Package Type: PowerDI5060-8
  • Material: Molded Plastic, "Green" Molding Compound
  • Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device), Qualified to JEDEC standards
  • Lead Finish: Matte Tin Annealed over Copper Leadframe

Technical Specifications

Characteristic Symbol Min Typ Max Unit Test Condition
Drain-Source Breakdown Voltage BVDSS 100 - - V VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current IDSS - - 1 A VDS = 80V, VGS = 0V
Gate-Source Leakage IGSS - - 100 nA VGS = 20V, VDS = 0V
Gate Threshold Voltage VGS(TH) 1.4 1.9 3.0 V VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS(ON) - 6.9 8.3 m VGS = 10V, ID = 13A
Static Drain-Source On-Resistance RDS(ON) - 7.5 12 m VGS = 6V, ID = 13A
Static Drain-Source On-Resistance RDS(ON) - 10 20 m VGS = 4.5V, ID = 5A
Diode Forward Voltage VSD - 0.8 1.3 V VGS = 0V, IS = 13A
Input Capacitance Ciss - 4166 - pF VDS = 50V, VGS = 0V, f = 1MHz
Output Capacitance Coss - 764 - pF VDS = 50V, VGS = 0V, f = 1MHz
Reverse Transfer Capacitance Crss - 44 - pF VDS = 50V, VGS = 0V, f = 1MHz
Gate Resistance Rg - 2 - VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge Qg - 58.4 - nC VDD = 50V, ID = 13A, VGS = 10V
Gate-Source Charge Qgs - 11.4 - nC VDD = 50V, ID = 13A, VGS = 10V
Gate-Drain Charge Qg d - 14.2 - nC VDD = 50V, ID = 13A, VGS = 10V
Turn-On Delay Time tD(ON) - 11.6 - ns VDD = 50V, VGS = 10V, ID = 13A, Rg = 6
Turn-On Rise Time tR - 14.1 - ns VDD = 50V, VGS = 10V, ID = 13A, Rg = 6
Turn-Off Delay Time tD(OFF) - 42.9 - ns VDD = 50V, VGS = 10V, ID = 13A, Rg = 6
Turn-Off Fall Time tF - 22 - ns VDD = 50V, VGS = 10V, ID = 13A, Rg = 6
Reverse Recovery Time tRR - 49.8 - ns IF = 13A, di/dt = 100A/s
Reverse Recovery Charge QRR - 85.1 - nC IF = 13A, di/dt = 100A/s
Continuous Drain Current ID - 98 - A VGS = 10V, TC = +25C (Note 8)
Continuous Drain Current ID - 62 - A VGS = 10V, TC = +100C (Note 8)
Continuous Drain Current ID - 14 - A VGS = 10V, TA = +25C (Note 5)
Continuous Drain Current ID - 11 - A VGS = 10V, TA = +70C (Note 5)
Pulsed Drain Current IDM - 250 - A (10s Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current IS - 110 - A -
Pulsed Body Diode Current ISM - 250 - A (10s Pulse, Duty Cycle = 1%)
Avalanche Current IAS - 10 - A (Note 7), L = 3mH
Avalanche Energy EAS - 150 - mJ (Note 7), L = 3mH
Total Power Dissipation PD - 139 - W TC = +25C (Note 8)
Total Power Dissipation PD - 3 - W (Note 5)
Thermal Resistance, Junction to Case RJC - 0.9 - C/W (Note 8)
Thermal Resistance, Junction to Ambient RJA - 49 - C/W (Note 5)
Operating and Storage Temperature Range TJ, TSTG -55 - +150 C -
Package Dimensions (PowerDI5060-8) A 0.90 1.00 1.10 mm -
Package Dimensions (PowerDI5060-8) A1 0.00 - 0.05 mm -
Package Dimensions (PowerDI5060-8) b 0.33 0.41 0.51 mm -
Package Dimensions (PowerDI5060-8) D - 5.15 - mm (BSC) -
Package Dimensions (PowerDI5060-8) E - 6.15 - mm (BSC) -
Weight (Approximate) - - 0.097 - grams -

Applications

  • Motor controls
  • DC-DC converters
  • Power managements
  • Notebook battery power management
  • Load switch

2412251119_DIODES-DMT10H010LPS-13_C530905.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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