| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 123A |
| RDS(on) | 1.7mΩ@10V,20A |
| Gate Threshold Voltage (Vgs(th)) | 1.75V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 103pF@15V |
| Pd - Power Dissipation | 50W |
| Input Capacitance(Ciss) | 3.1nF@15V |
| Gate Charge(Qg) | 43nC@10V |
| Description | 30V 123A 50W Surface Mount PDFN5x6-8L |
| Mfr. Part # | ESJG150N03A |
| Package | PDFN5x6-8L |
| Model Number | ESJG150N03A |
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Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 123A |
| RDS(on) | 1.7mΩ@10V,20A | Gate Threshold Voltage (Vgs(th)) | 1.75V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 103pF@15V | Pd - Power Dissipation | 50W |
| Input Capacitance(Ciss) | 3.1nF@15V | Gate Charge(Qg) | 43nC@10V |
| Description | 30V 123A 50W Surface Mount PDFN5x6-8L | Mfr. Part # | ESJG150N03A |
| Package | PDFN5x6-8L | Model Number | ESJG150N03A |
The ESJG150N03A is an N-channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. This product is Pb-free and Halogen free.
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25C | 123 | A | ||
| Continuous Drain Current | ID | TC=75C | 95 | A | ||
| Maximum Power Dissipation | PD | TC=25C | 50 | W | ||
| Maximum Power Dissipation | PD | TC=75C | 30 | W | ||
| Pulsed Drain Current | IDM | 260 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 38 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 216 | mJ | ||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Junction-to-Case Thermal Resistance | RJC | t ≤ 10 s | 2.5 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=30V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.1 | 1.75 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 1.7 | 2.2 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=20A | 2.6 | 3.6 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =15V f=1MHz | 3100 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =15V f=1MHz | 882 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =15V f=1MHz | 103 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V ID=20A | 43 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=15V ID=20A | 8.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=15V ID=20A | 6 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=15V, RG=3Ω, RL=0.75Ω | 11.5 | ns | ||
| Rise Time | tr | VGS=10V, VDD=15V, RG=3Ω, RL=0.75Ω | 5.2 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=15V, RG=3Ω, RL=0.75Ω | 40 | ns | ||
| Fall Time | tf | VGS=10V, VDD=15V, RG=3Ω, RL=0.75Ω | 8 | ns | ||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=20A | 1.5 | V | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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