| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 3A |
| RDS(on) | 100mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| Input Capacitance(Ciss) | 352pF |
| Output Capacitance(Coss) | 30pF |
| Pd - Power Dissipation | 1.5W |
| Gate Charge(Qg) | 9nC@10V |
| Description | N-Channel 60V 3A 1.5W Surface Mount SOT-23 |
| Mfr. Part # | SI2308A(ES) |
| Package | SOT-23 |
| Model Number | SI2308A(ES) |
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Product Specification
| Drain to Source Voltage | 60V | Current - Continuous Drain(Id) | 3A |
| RDS(on) | 100mΩ@10V | Gate Threshold Voltage (Vgs(th)) | 2V@250uA |
| Type | N-Channel | Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| Input Capacitance(Ciss) | 352pF | Output Capacitance(Coss) | 30pF |
| Pd - Power Dissipation | 1.5W | Gate Charge(Qg) | 9nC@10V |
| Description | N-Channel 60V 3A 1.5W Surface Mount SOT-23 | Mfr. Part # | SI2308A(ES) |
| Package | SOT-23 | Model Number | SI2308A(ES) |
The SI2308A(ES) is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) with low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications, offering high density cell design, reliability, and avalanche rating.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | 3.0 | A | ||
| Continuous Drain Current | ID | TA=100°C | 2.0 | A | ||
| Maximum Power Dissipation | PD | 1.5 | W | |||
| Pulsed Drain Current | IDM | 12 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 83 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.4 | 2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=3A | 75 | 100 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=2A | 85 | 120 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 352 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 30 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 23 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDD=30V, ID=3A | 9 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDD=30V, ID=3A | 1.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDD=30V, ID=3A | 2 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=30V, ID=2A, RG=3Ω | 5 | ns | ||
| Rise Time | tr | VGS=10V, VDD=30V, ID=2A, RG=3Ω | 7 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=30V, ID=2A, RG=3Ω | 37 | ns | ||
| Fall Time | tf | VGS=10V, VDD=30V, ID=2A, RG=3Ω | 22 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=2A | 1.5 | V | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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