| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 1.25A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 220mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 750mV@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 20pF |
| Input Capacitance(Ciss) | 33pF |
| Pd - Power Dissipation | 710mW |
| Gate Charge(Qg) | 800pC@4.5V |
| Description | N-Channel 20V 1.25A 710mW Surface Mount SOT-23 |
| Mfr. Part # | SI3134KS-TP-ES |
| Package | SOT-23 |
| Model Number | SI3134KS-TP-ES |
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Product Specification
| Drain to Source Voltage | 20V | Current - Continuous Drain(Id) | 1.25A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 220mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 750mV@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | Number | 1 N-channel |
| Output Capacitance(Coss) | 20pF | Input Capacitance(Ciss) | 33pF |
| Pd - Power Dissipation | 710mW | Gate Charge(Qg) | 800pC@4.5V |
| Description | N-Channel 20V 1.25A 710mW Surface Mount SOT-23 | Mfr. Part # | SI3134KS-TP-ES |
| Package | SOT-23 | Model Number | SI3134KS-TP-ES |
The SI3134KS-TP-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen-free.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| ABSOLUTE MAXIMUM RATINGS & THERMAL CHARACTERISTICS | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | 1.25 | A | ||
| TA=75°C | 0.97 | A | ||||
| Maximum Power Dissipation | PD | 0.71 | W | |||
| Pulsed Drain Current | IDM | 5 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤10s | 176 | °C/W | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±10V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.35 | 0.75 | 1.1 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.9A | 220 | 300 | mΩ | |
| VGS=2.5V, ID=0.45A | 290 | 400 | mΩ | |||
| VGS=1.8V, ID=0.2A | 420 | 700 | mΩ | |||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 33 | pF | ||
| Output Capacitance | COSS | 20 | pF | |||
| Reverse Transfer Capacitance | CRSS | 10 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=0.5A | 0.8 | nC | ||
| Gate-to-Source Charge | QGS | 0.3 | ||||
| Gate-to-Drain Charge | QGD | 0.15 | ||||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, ID=0.5A, RG=3Ω | 4 | ns | ||
| Rise Time | tr | 18.8 | ||||
| Turn-Off Delay Time | td(OFF) | 10 | ||||
| Fall Time | tf | 23 | ||||
| Forward Voltage | VSD | VGS=0V, IS=0.9A | 1.5 | V | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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